ATA6823C

ATA6823C_14 ATMEL

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 26

Technical content

Features

• PWM and direction-controlled driving of four externally-powered NMOS transistors
• A programmable dead time is included to avoid peak currents within the H-bridge
• Integrated charge pump to provide gate voltages for high-side drivers and to supply the gate of the external battery reverse protection NMOS
• 5V/3.3V regulator and current limitation function
• Reset derived from 5V/3.3V regulator output voltage
• Sleep mode with supply current of typically < 45µA, wake-up by signal on pins EN2 or on LIN interface
• A programmable window watchdog
• Battery overvoltage protection and battery undervoltage management
• Overtemperature warning and protection (shutdown)
• LIN 2.1 compliant
• 3.3V/5V regulator with trimmed band gap
• QFN32 package ATA6823C H-bridge Motor Driver DATASHEET

ATA6823C [DATASHEET] 9209F–AUTO–06/14 1. Description The Atmel® ATA6823C is designed for automotive body and powertrain applications. The IC is used to drive a continuous current motor in a full H-bridge configuration. An external microcontroller controls the driving function of the IC by providing a PWM signal and a direction signal and allows the use of the IC in a motor-control application. The PWM control is performed by the low-side switch; the high-side switch is permanently on in the driving phase. The VMODE configuration pin can be set to 5V or 3.3V mode (for regulator and interface high level). The window watchdog has a programmable time, programmable by choosing a certain value of the external watchdog resistor RWD, internally trimmed to an accuracy of 10%. For communication a LIN transceiver 2.1 is integrated. Figure 1-1. Block Diagram VMODE /RESET Microcontroller Logic Control VCC EN1WD 12V Regulator Vint 5V Regulator OTP 12 bit Oscillator VCC 5V Regulator Bandgap Charge Pump HS Driver 2 VRES H2 CP CP CPLO VBATSW VBAT VBATBattery VBG PBAT VINT VG CPIH M S1 S2 L2 VBAT GND DG3 EN2 LIN CC DG2 VCC PGNDL1 OT UV OV HS Driver 1 RGATE RGATE RGATERGATE LS Driver 2 Supervisor CC timer WD timer LIN LS Driver 1 DIR TXRXPWM DG1

3ATA6823C [DATASHEET] 9209F–AUTO–06/14 2. Pin Configuration Figure 2-1. Pinning QFN32 Note: YWW Date code (Y = Year - above 2000, WW = week number) ATA6823 Product name ZZZZZ Wafer lot number AL Assembly sub-lot number Table 2-1. Pin Description Pin Symbol I/O Function

1 VMODE I Selector for VCC and interface logic voltage level

2 VINT I/O Blocking capacitor 220nF/10V/X7R

3 RWD I Resistor defining the watchdog interval

4 CC I/O RC combination to adjust cross conduction time

5 /RESET O Reset signal for microcontroller

6 WD I Watchdog trigger signal

7 GND I Ground for chip core

8 LIN I/O LIN-bus terminal

9 TX I Transmit signal to LIN bus from microcontroller

10 DIR I Defines the rotation direction for the motor

11 PWM I PWM input controls motor speed

12 EN1 I Microcontroller output to keep the chip in active mode

13 RX O Receive signal from LIN bus for microcontroller

14 DG3 O Diagnostic output 3

15 DG2 O Diagnostic output 2

16 DG1 O Diagnostic output 1

17 S1 I/O Source voltage H-bridge, high-side 1

18 H1 O Gate voltage H-bridge, high-side 1

19 S2 I/O Source voltage H-bridge, high-side 2

20 H2 O Gate voltage H-bridge, high-side 2

21 VRES I/O Gate voltage for reverse protection NMOS, blocking capacitor 470nF/25V/X7R

/RESET WD GND LIN VG CPLO CPHI VRES EN2 VBATSW VBAT VCC PGND PBAT TX DIR PWM EN1 RX DG3 DG2 DG1 32 31 30 29 28 27 26 25 9 10 11 12 13 14 15 16 Atmel YWW ATA6823C ZZZZZ-AL

ATA6823C [DATASHEET] 9209F–AUTO–06/14

22 CPHI I

Charge pump capacitor 220nF/25V/X7R

23 CPLO O

24 VG I/O Blocking capacitor 470nF/25V/X7R

25 PBAT I Power supply (after reverse protection) for charge pump and H-bridge

26 L2 O Gate voltage H-bridge, low-side 2

27 L1 O Gate voltage H-bridge, low-side 1

28 PGND I Power ground for H-bridge and charge pump

29 VCC O 5V/100 mA supply for microcontroller, blocking capacitor 2.2µF/10V/X7R

30 VBAT I Supply voltage for IC core (after reverse protection)

31 VBATSW O 100Ω PMOS switch from VVBAT

32 EN2 I Enable input

Table 2-1. Pin Description (Continued) Pin Symbol I/O Function

5ATA6823C [DATASHEET] 9209F–AUTO–06/14 3. Functional Description

3.1 Power Supply Unit with Supervisor Functions

3.1.1 Power Supply

The IC is supplied by a reverse-protected battery voltage. To prevent it from destruction, proper external protection circuitry has to be added. It is recommended to use at least a capacitor combination of storage and HF caps behind the reverse protection circuitry and closed to the VBAT pin of the IC (see Figure 1-1 on page 2). A fully-internal low-power and low-drop regulator, stabilized by an external blocking capacitor provides the necessary low- voltage supply needed for the wake-up process. The low-power band gap reference is trimmed and is used for the bigger VCC regulator, too. All internal blocks are supplied by the internal regulator. Note: The internal supply voltage V INT must not be used for any other supply purpose! Nothing inside the IC except the logic interface to the microcontroller is supplied by the 5V/3.3V VCC regulator. A power-good comparator checks the output voltage of the VINT regulator and keeps the whole chip in reset as long as the voltage is too low. There is a high-voltage switch which brings out the battery voltage to the pin VBATSW for measurement purposes. This switch is switched ON for VCC =HIGH and stays ON in case of a watchdog reset going to sleep mode, VBATSW turns OFF. The signal can be used to switch on external voltage regulators, etc.

3.1.2 Voltage Supervisor

This block is intended to protect the IC and the external power MOS transistors against overvoltage on battery level and to manage undervoltage on it. Function: in case of both overvoltage alarm (VTHOV) and of undervoltage alarm (VTHUV) the external NMOS motor bridge transistors will be switched off. The failure state will be flagged via DG2. No other actions will be carried out. The voltage supervision block is connected to VBAT and filtered by a first-order low pass with a corner frequency of typical 15kHz.

3.1.3 Temperature Supervisor

There is a temperature sensor integrated on-chip to prevent the IC from overheating due to a failure in the external circuitry and to protect the external NMOSFET transistors. In case of detected overtemperature (150°C), the diagnostic pin DG3 will be switched to “H” to signalize this event to the microcontroller. It should undertake actions to reduce the power dissipation in the IC. In case of detected overtemperature (165°C), the VCC regulator and all drivers including the LIN transceiver will be switched OFF immediately and /RESET will go LOW. Both temperature thresholds are correlated. The absolute tolerance is ±10°C and there is a built-in hysteresis of about 10°C to avoid fast oscillations. After cooling down below the 155°C threshold; the IC will go into active mode. The LIN interface has a separate thermal shutdown with disabled the low-side driver at typically 165°C.

3.2 Sleep Mode

To be able to guarantee the low quiescent current of the inactive IC, a sleep mode is established. In sleep mode it is possible to wake-up the IC by using the pins EN2 or LIN. In sleep mode, the following blocks are active:

• Band gap
• Internal 5V regulator (VINT) with external blocking capacitor of 220nF
• Input structure for detecting the EN2 pins threshold
• Wake-up block of the LIN receive part

ATA6823C [DATASHEET] 9209F–AUTO–06/14

3.3 Wake-up and Sleep Mode Strategy

The IC has two modes: Sleep and Active. The change between the modes is described below. The default state after power-on is active mode. The wake-up procedure brings the IC from a standby mode (sleep) to an active mode (active). The internal 5V supply VINT, the EN2 pin input structure and a certain part of the LIN receiver are permanently active to ensure a proper startup of the system. The Go to Active and Go to Sleep procedures are implemented as follows:

• Go to Active by activating pin EN2 The input EN2 is intended as a switch-on pin from an external signal. Its input structure consists of a comparator with built-in hysteresis. It is ESD-protected by diodes against GND and VVBAT; for this reason the input voltage level must be positive and not higher than VVBAT. Pulling the EN2 pin up to the VVBAT level will drive the IC into active mode. EN2 is debounced with a time constant of 20µs, based on a 100 kHz clock.
• Go to Active using the LIN interface The second possibility for wake-up can be performed using the LIN transceiver. In sleep mode, the LIN receiver is partially active. The wake-up by LIN requires 2 steps: 1. If the voltage on pin LIN is below a value of V /DATwake (about VVBAT – 2V) the receive part of the LIN interface is active (not to be confused with active mode of the whole IC). The active receive part is able to detect a valid LOW on the LIN pin. 2. If LIN = LOW during a filter time t wakeLIN (typically 70µs) the IC will change to active mode. A short change back to HIGH during the filter time will reset the filter. This information is stored in a latch after entering active mode If the change to active mode was caused by LIN, the EN1 or EN2 pins may remain LOW without disturbing the active mode.
• Stay in Active via EN1 The input EN1 is intended to keep the IC in active mode via a signal from the microcontroller. The input is ESD-protected by diodes against GND and VCC. Therefore, the input voltage must be positive and not higher than VCC. EN1 cannot be used to switch from Sleep to Active because the VCC regulator is off in the sleep mode and VCC will be zero.
• Go to Sleep A HIGH to LOW transition at pin EN1 and a following permanent LOW for the time tgotosleep (typically 20µs) switches the IC to sleep mode. Figure 3-1 illustrates the wake-up by LIN. The status PREWAKE is characterized by the activated receive block of the LIN interface. After going to active mode, the VCC regulator starts working. Go to Sleep is possible with a valid HIGH to LOW transition at pin EN1 (permanent LOW for longer than tdb) if EN1 was in a valid HIGH state (HIGH for longer than tdb) before. Switching characteristic of the outputs: When the IC is set to SLEEP MODE by a “high to low” transition at pin EN1, the low-side transistors of the external H-bridge are switched on for a short time. This causes a shortcircuit current pulse in the bridge because one of the high-side transistors is usually on. The pulse length is similar to the one of the implemented short circuit detection time tsc. For the selection of the external FETs it needs to be considered that in the case of a short circuit condition the current in the transistors will flow for a time tsc with a maximum of 15µs according to Section 8. “Electrical Characteristics” on page 15, item 7.29. For the selection of the external FETs this short circuit behavior has to be taken into consideration, so that they will not be damaged in the event of a short circuit condition caused by a failure or caused by the described sleep mode switching.

ATA6823C [DATASHEET] 9209F–AUTO–06/14

3.5 Reset and Watchdog Management

The timing basis of the watchdog is provided by the trimmed internal oscillator. Its period TOSC is adjustable via the external resistor RWD. The watchdog expects a triggering signal (a rising edge) from the microcontroller at the WD input within a period time window of TWD. In order to save current consumption, the watchdog is switched off during sleep mode. Figure 3-3. Timing Diagram of the Watchdog Function

3.5.1 Timing Sequence

For example, with an external resistor RWD =3 3 kΩ ±1% we get the following typical parameters of the watchdog. TOSC = 12.32µs, t1 = 12.1ms, t2 = 9.61ms, TWD = 16.88ms ±10% The times tres = 70ms and td = 70ms are fixed values with a tolerance of 10%. After ramp-up of the battery voltage (power-on reset), the VCC regulator is switched on. The reset output, /RESET, stays low for the time tres (typically 70ms), then switches to high. For an initial lead time td (typically 70ms for setups in the controller) the watchdog waits for a rising edge on WD to start its normal window watchdog sequence. If no rising edge is detected, the watchdog will reset the microcontroller for tres and wait td for the rising edge on WD. Times t1 (close window) and t2 (open window) form the window watchdog sequence. To avoid receiving a reset from the watchdog, the triggering signal from the microcontroller must hit the time frame of t2 = 9.61ms. The trigger event will restart the watchdog sequence. Figure 3-4. T WD versus RWD If triggering fails, /RESET will be pulled to ground for a shortened reset time of typically 2 ms. The watchdog start sequence is similar to the power-on reset. t2t1 t2t1 td td tresshorttres WD /RESET RWD (kΩ) TWD (ms) max min 10 20 30 40 50 60 70 80 90 1 00 typ

9ATA6823C [DATASHEET] 9209F–AUTO–06/14 The internal oscillator is trimmed to a tolerance of < ±10%. This means that t 1 and t2 can also vary by ±10%. The following calculation shows the worst case calculation of the watchdog period Twd which the microcontroller has to provide. t1min = 0.90 × t1 = 10.87ms, t1max = 1.10 × t1 = 13.28ms t2min = 0.90 × t2 = 8.65ms, t2max = 1.10 × t2 = 10.57ms Twdmax = t1min + t2min = 10.87ms + 8.65ms = 19.52ms Twdmin = t1max = 13.28ms Figure 3-4 above shows the typical watchdog period TWD depending on the value of the external resistor ROSC. A reset will be active for VCC < VtHRESx; the level VtHRESx is realized with a hysteresis (HYSRESth).

3.6 LIN Transceiver

A bi-directional bus interface is implemented for data transfer between the LIN bus and the local LIN protocol controller. The transceiver consists of a low side driver (1.2V at 40mA) with slew rate control, wave shaping, current limitation, and a high-voltage comparator followed by a debouncing unit in the receiver.

3.6.1 Transmit Mode

During transmission, the data at the pin TX will be transferred to the bus driver to generate a bus signal on pin LIN. To minimize the electromagnetic emission of the bus line, the bus driver has an integrated slew rate control and wave- shaping unit. Transmission will be interrupted in the following cases:

• Thermal shutdown active or overtemperature LIN active
• Sleep mode Figure 3-5. Definition of Bus Timing Parameters tBit THRec(min) THDom(min) THRec(max) Thresholds of receiving node 2 Thresholds of receiving node 1 THDom(max) tBus_dom(max) tBus_rec(min) tBus_dom(min) trx_pdr(2) trx_pdf(2) trx_pdf(1) trx_pdr(1) tBus_rec(max) tBit tBit VVBAT (Transceiver supply of transmitting node) RX (output of receiving Node 2) RX (output of receiving Node 1) TX LIN Bus Signal (input to transmitting Node)

ATA6823C [DATASHEET] 9209F–AUTO–06/14 The recessive BUS level is generated from the integrated 30kΩ pull-up resistor in series with an active diode. This diode pre- vents the reverse current of VBUS during differential voltage between VSUP and BUS (VBUS >V SUP). No additional termination resistor is necessary to use the ATA6823C in LIN slave nodes. If this IC is used for LIN master nodes, it is necessary that the BUS pin be terminated via an external 1 kΩ resistor in series with a diode to VBAT.

3.6.2 TXD Dominant Time-out Function

The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in dominant state. If TXD is forced low longer than tdom > 18.4ms, the pin LIN will be switched off to recessive mode. To reset this mode switch TXD to high (> 10µs) before switching LIN to dominant again.

3.7 Control Inputs EN1, EN2, DIR, PWM

3.7.1 Pins EN1, EN2

Any of the enable pins may be used to activate the IC with a HIGH. EN1 is a low level input, EN2 can withstand a voltage up to 40V. Internal pull-down resistors are included.

3.7.2 Pin DIR

Logical input to control the direction of the external motor to be controlled by the IC. An internal pull-down resistor is included.

3.7.3 Pin PWM

Logical input for PWM information delivered by external microcontroller. Duty cycle and frequency at this pin are passed through to the H-bridge. An internal pull-down resistor is included. The internal signal ON is high when

• At least one valid trigger has been accepted (SYNC = 1)
• VVBAT is inside the specified range (UV = 0 and nOV = 1)
• The charge pump has reached its minimum voltage (CPOK = 1) and
• The device is not overheated (OT2 = 0) In case of a short circuit, the appropriate transistor is switched off after a debounce time of about 10µs. In order to avoid cross current through the bridge, a cross conduction timer is implemented. Its time constant is programmable by means of an RC combination. Table 3-1. Status of the IC Depending on Control Inputs and Detected Failures ON DIR PWM H1 L1 H2 L2

0 X X OFF OFF OFF OFF Standby mode

1 0 PWM ON OFF /PWM PWM Motor PWM forward 1 1 PWM /PWM PWM ON OFF Motor PWM reverse

11ATA6823C [DATASHEET] 9209F–AUTO–06/14 In order to be able to distinguish between a wake-up from LIN or from EN2, the source of wake-up is flagged in DG1 until the first valid trigger (LIN = 0, EN2 = 1).

3.8 VG Regulator

The VG regulator is used to generate the gate voltage for the low-side driver. Its output voltage will be used as one input for the charge pump, which generates the gate voltage for the high-side driver. The purpose of the regulator is to limit the gate voltage for the external power MOS transistors to 12V. It needs a ceramic capacitor of 470nF for stability. The output voltage is reduced if the supply voltage at VBAT falls below 12V.

3.9 Charge Pump

The integrated charge pump is needed to supply the gates of the external power MOS transistors. It needs a shuffle capacitor of 220nF and a reservoir capacitor of 470nF. Without load, the output voltage on the reservoir capacitor is VVBAT plus VG. The charge pump is clocked with a dedicated internal oscillator of 100KHz. The charge pump is designed to reach a good EMC level.

3.10 Thermal Shutdown

There is a thermal shutdown block implemented. With rising junction temperature, a first warning level will be reached at 150°C. At this point the IC stays fully functional and a warning will be sent to the microcontroller. At junction temperature 165°C the VCC regulator will be switched off and a reset occurs.

3.11 H-bridge Driver

The IC includes two push-pull drivers for control of two external power NMOS used as high-side drivers and two push-pull drivers for control of two external power NMOS used as low-side drivers. The drivers are able to be used with standard and logic-level power NMOS. The drivers for the high-side control use the charge pump voltage to supply the gates with a voltage of VG above the battery voltage level. The low-side drivers are supplied by VG directly. It is possible to control the external load (motor) in the forward and reverse direction (see Table 3-1 on page 10). The duty cycle of the PMW controls the speed. A duty cycle of 100% is possible in both directions. Table 3-2. Status of the Diagnostic Outputs CPOK OT1 OV UV SC DG1 DG2 DG3

0 X X X X – 1 – Charge pump failure

X 1 X X X – – 1 Overtemperature warning X X 1 X X – 1 – Overvoltage X X X 1 X – 1 – Undervoltage X X X X 1 1 – – Short circuit Note: X represents: don't care – no effect) OT1: Overtemperature warning OV: Overvoltage of VBAT UV: Undervoltage of VBAT SC: Short circuit CPOK: Charge pump OK

ATA6823C [DATASHEET] 9209F–AUTO–06/14

3.11.1 Cross Conduction Time

To prevent high peak currents in the H-bridge, a non-overlapping phase for switching the external power NMOS is realized. An external RC combination defines the cross conduction time in the following way: tCC (µs) = 0.41 × RCC (kΩ) × CCC (nF) (tolerance: ±5% ±0.15µs) The RC combination is charged to 5V and the switching level of the internal comparator is 67% of the start level. The resistor RCC must be greater than 5kΩ and should be as close as possible to 10kΩ, the CCC value has to be ≤ 5nF. Use of COG capacitor material is recommended. The time measurement is triggered by the PWM or DIR signal crossing the 50% level. Figure 3-6. Timing of the Drivers The delays tHxLH and tLxLH include the cross conduction time tCC.

3.12 Short Circuit Detection

To detect a short in H-bridge circuitry, internal comparators detect the voltage difference between source and drain of the external power NMOS. If the transistors are switched ON and the source-drain voltage difference is higher than the value VSC (4V with tolerances) for a time > tSC (typically 10µs) the signal SC (short circuit) will be set and the drivers will be switched off immediately. The diagnostic pin DG1 will be set to “H”. With the next transition on pin PWM, the bit will be cleared and the corresponding drivers, depending on the DIR pin, will be switched on again. There is a PBAT supervision block implemented to detect the possible voltage drop on PBAT during a short circuit. If the voltage at PBAT falls under VSCPB (5.6V with tolerances) for a time > tSC the drivers will be switched off immediately and DG1 will be set to “H”. It will be cleared as above. tLxLH tLxr tHxLH tHxr tCC tHxHL tHxf tLxHL tLxf tCC Hx Lx PWM or DIR 80% 50% 20% 80% 20% t t t

13ATA6823C [DATASHEET] 9209F–AUTO–06/14 4. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Pin Description Pin Name Min. Max. Unit Ground GND 0 0 V Power ground PGND –0.3 +0.3 V Reverse protected battery voltage VBAT +40 V Reverse current out of pin VBAT –1 mA Reverse protected battery voltage PBAT +40 V Reverse current out of pin PBAT –20 mA Digital output /RESET –0.3 VVCC + 0.3 V Digital output DG1, DG2, DG3 –0.3 VVCC + 0.3 V 4.9V output, external blocking capacitor VINT –0.3 +5.5 V Cross conduction time capacitor/resistor combination CC –0.3 VVINT + 0.3 V Digital input coming from microcontroller WD –0.3 VVINT + 0.3 V Watchdog timing resistor RWD –0.3 VVCC + 0.3 V Digital input direction control DIR –0.3 VVCC + 0.3 V Digital input PWM control + Test mode PWM –0.3 VVCC + 0.3 V Digital input for enable control EN1 –0.3 VVCC + 0.3 V Digital input for enable control EN2 –0.3 VVBAT + 0.3 V 5V regulator output VCC –0.3 +5.5 V Digital input VMODE –0.3 VVINT + 0.3 V 12V output, external blocking capacitor VG +16 V Digital output RX –0.3 VVCC + 0.3 V Digital input TX –0.3 VVCC + 0.3 V LIN data pin LIN –27 VVBAT + 2 V Source external high-side NMOS S1, S2 (–2) +40(2) V Gates external low-side NMOS L1, L2 VPGND – 0.3 VVG + 0.3 V Gates of external high-side NMOS H1, H2 VSx – 1(1) VSx + 16(1) V Charge pump CPLO VPBAT + 0.3 V Charge pump CPHI VVRES + 0.3 V Charge pump output VRES +40(3) V Switched VBAT VBATSW –0.3 VVBAT + 0.3 V Storage temperature ϑSTORE –40 +150 °C Reverse current CPLO, CPHI, VG, VRES, Sx –2 mA Lx, Hx –1 mA Notes: 1. x = 1.2 2. t < 0.5s 3. Load dump of t < 0.5s tolerated

ATA6823C [DATASHEET] 9209F–AUTO–06/14 5. Thermal Resistance Parameters Symbol Value Unit Thermal resistance junction to heat slug Rthjc <5 K/W Thermal resistance junction to ambient when heat slug is soldered to PCB(1) Rthja 29 K/W Note: 1. Thermal resistance junction ambient: 29K/W (at airflow of 0 LFPM), valid for JEDEC Standard 4-layer Thermal test board with 5 x 5 thermal via matrix (100µm drill hole, filled vias). 6. Operating Range The operating conditions define the limits for functional operation and parametric characteristics of the device. Functionality outside these limits is not implied unless otherwise stated explicitly. Parameters Symbol Min. Max. Unit Operating supply voltage(1) VVBAT1 VTHUV VTHOV V Operating supply voltage(2) VVBAT2 6 VTHUV V Operating supply voltage(3) VVBAT3 3 < 6 V Operating supply voltage(4) VVBAT4 0 < 3 V Operating supply voltage(5) VVBAT5 > VTHOV 40 V Operating supply voltage(6) VVBAT6 7 18 V Normal functionality Tj –40 +150 °C Normal functionality, overtemperature warning Tj 150 165 °C Drivers for H1, H2, L1, L2, and LIN are switched OFF, VCC regulator is OFF Tj 165 180 °C Note: 1. Full functionality 2. H-bridge drivers are switched off (undervoltage detection) 3. H-bridge drivers are switched off, 5V/3.3V regulat or with reduced parameters, RESET works correctly 4. H-bridge drivers are switched off, 5V regulator not working, RESET not correct 5. H-bridge drivers are switched off 6. Full LIN functionality in confo rmance with LIN specification 2.1 7. Noise and Surge Imm unity, ESD and Latch-up Parameters Standard and Test Conditions Value Conducted interferences ISO 7637-1 Level 4(1) Conducted disturbances CISP25 Level 5 ESD according to IBEE LIN EMC - Pins LIN, PBAT, VBAT - Pin EN2 (33 kΩ serial resistor) Test specification 1.0 following IEC 61000-4-2 ±6kV ±5kV ESD HBM with 1.5kΩ/100pF ESD- STM5.1-2001 JESD22-A114E 2007 CEI/IEC 60749-26: 2006 AEC-Q100-002-Ref_D ±3kV ESD HBM with 1.5kΩ/100pF Pins EN2, LIN, PBAT, VBAT against GND ESD- STM5.1-2001 JESD22-A114E 2007 CEI/IEC 60749-26: 2006 AEC-Q100-002-Ref_D ±8kV ESD CDM (field induced method) ESD STM5.3.1 - 1999 ±1kV Note: 1. Test pulse 5: V bat max = 40V

15ATA6823C [DATASHEET] 9209F–AUTO–06/14 Static latch-up tested according to AEC-Q100-004 and JESD78.

• 3 to 6 samples, 0 failures
• Electrical post stress testing at room temperature In test, the voltage at the pins VBAT, LIN, CP, VBATSW, Hx, and Sx must not exceed 45V when not able to drive the specified current. 8. Electrical Characteristics All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

1 Power Supply and Supervisor Functions

1.1 Current consumption VVBAT VVBAT = 13.5V(1) 25, 30 IVBAT1 7 mA A

1.2 Current consumption VVBAT

in Standby mode VVBAT =13.5V 25, 30 IVBAT2 50 µA A 1.3 Internal power supply 2 VINT 4.94 V A 1.4 Band gap voltage 3 VBG 1.235 V A

1.5 Overvoltage threshold Up

30 VTHOV_UP 21.2 22.7 V A

1.5.1 Overvoltage threshold

30 VTHOV_DOWN 19.8 21.3 V A

1.6 Overvoltage threshold

30 VTOVhys 1 2.4 V A

1.7 Undervoltage threshold Up

30 VTHUV_UP 6.8 7.4 V A

1.7.1 Undervoltage threshold

30 VTHUV_DOWN 6.5 7.0 V A

1.8 Undervoltage threshold

30 VTUVhys 0.2 0.6 V A

1.9 On resistance of VVBAT

switch VVBAT = 13.5V 31 RON_VBATSW 100 Ω A 2 5V/3.3V Regulator

2.1 Regulated output voltage 9V < VVBAT <4 0 V

Iload = 0mA to 100mA 29 VCC1 4.85 (3.2) 5.15 (3.4) V A

2.2 Regulated output voltage 6V < VVBAT ≤ 9V

Iload = 0mA to 100mA 29 VCC2 4.75 (3.2) 5.25 (3.4) V A

2.3 Line regulation Iload = 0mA to 100mA 29 DC line

regulation <1 50 mV A * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

ATA6823C [DATASHEET] 9209F–AUTO–06/14

2.4 Load regulation Iload = 0mA to 100mA 29 DC load

regulation <10 50 mV A

2.5 Output current limitation VVBAT > 6V 29 IOS1 100 350 mA A

2.6 Serial inductance to CVCC

including PCB 29 ESL 1 20 nH D

2.7 Serial resistance to CVCC

including PCB 29 ESR 0 0.5 Ω D 2.8 Blocking cap at VCC (2), (3) 29 CVCC 1.1 3.3 µF D 2.9 HIGH threshold VMODE 1 VMODE H 4.0 V A 2.10 LOW threshold VMODE 1 VMODE L 0.7 V A

3 Reset and Watchdog

3.1 VCC threshold voltage level

VMODE = “H” (VMODE = “L”)

29 VtHRESH

4.9 (3.25) V A 3.1a Tracking of reset threshold with regulated output voltage VMODE = “H” (VMODE = “L”)

29 VVCC1-VtHRESH

(50) mV A

3.2 VCC threshold voltage level

VMODE = “H” (VMODE = “L”)

29 VtHRESL

4.0 (2.65) V A

3.3 Hysteresis of /RESET level VMODE = “H”

(VMODE = “L”)(4) 29 HYSRESth 70 200 600 (400) mV A

3.4 Length of pulse at /RESET

pin (5) 5 tres 7000 T100 A

3.5 Length of short pulse at

/RESET pin (5) 5 tresshort 200 T100 A

3.6 Wait for the first WD trigger (5) 5 td 7000 T100 A

3.7 Time for VCC < VtHRESL

before activating /RESET (4) 29 tdelayRESL 0.5 2 µs C 3.8 Resistor defining internal bias currents for watchdog oscillator

3 RRWD 10 91 kΩ D

3.9 Watchdog oscillator period RRWD = 33kΩ 3 TOSC 11.09 13.55 µs A

3.11 Watchdog input

low-voltage threshold 6 VILWD 0.3 × VVCC V A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

17ATA6823C [DATASHEET] 9209F–AUTO–06/14

3.12 Watchdog input

high-voltage threshold 6 VIHWD 0.7 × VVCC V A

3.13 Hysteresis of watchdog

6 VhysWD 0.3 0.7 V A

3.14 Close window (5) 6 t1 980 ×

A

3.15 Open window (5) 6 t2 780 ×

A

3.16 Output low-voltage of

/RESET At IOLRES = 1mA 5 VOLRES 0.4 V A

3.17 Internal pull-up resistor at

pin /RESET 5 RPURES 5 10 15 kΩ A

4 LIN Transceiver, 7V ≤ VVBAT ≤ 18V

4.1 Low-level output current Normal mode;

VLIN =0 V , VRX =0 . 4 V 13 ILRXD 2 mA A

4.2 High-level output current Normal mode; VLIN =V VBAT

VRX =V CC –0 . 4 V 13 IHRXD 1 mA A

4.3 Driver recessive output

RLOAD = 1000Ω to VBAT 8 VBUSrecdrv 0.9 × VVBAT V A

4.4 Driver dominant voltage

V BUSdom_DRV_LoSUP VVBAT = 7.0V Rload = 500Ω 8 V_LoSUP 1.2 V A

4.5 Driver dominant voltage

VBUSdom_DRV_HiSUP VVBAT = 18V Rload = 500Ω 8 V_HiSUP 2 V A

4.6 Driver dominant voltage

VBUSdom_DRV_LoSUP VVBAT = 7.0V Rload = 1000Ω 8 V_LoSUP_1k 0.6 V A

4.7 Driver dominant voltage

VBUSdom_DRV_HiSUP VVBAT = 18V Rload = 1000Ω 8 V_HiSUP_1k_ 0.8 V A 4.8a Pull up resistor to VVBAT Serial diode required 8 RLIN 20 47 kΩ A 4.8b Capacitance on LIN pin to GND 8 CLIN 20 pF D

4.9 Current limitation VBUS = VVBAT_max 8 IBUS_LIM 50 200 mA A

4.10 Input leakage current at the receiver including pull- up resistor as specified Input leakage current driver off V BUS = 0V VVBAT = 12V

8 IBUS_PAS_dom –1 mA A

1. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

ATA6823C [DATASHEET] 9209F–AUTO–06/14

4.11 Leakage current LIN

7V < V VBAT < 18V 7V < VBUS < 18V VBUS = VVBAT

8 IBUS_PAS_rec 20 µA A

4.12 Leakage current at ground loss Control unit disconnected from ground Loss of local ground must not affect communication in the residual network 7V < VVBAT < 18V GNDDevice = VVBAT VVBAT = 12V 0V < VBUS < 18V

8 IBUS_NO_gnd –1 +1 mA A

4.13 Node has to sustain the current that can flow under this condition. Bus must remain operational under this condition 7V < VVBAT < 18V VVBAT disconnected VSUP_Device = GND 0V < VBUS < 18V

8 IBUS 100 µA A

4.14 Center of receiver

7V < VVBAT < 18V VBUS_CNT = (Vth_dom +V th_rec)/2

8 VBUS_CNT

0.475 × VVBAT 0.5 × VVBAT 0.525 × VVBAT V A

4.15 Receiver dominant state 7V < VVBAT < 18V

VEN = 5V 8 VBUSdom 0.4 × VVBAT V A

4.16 Receiver recessive state 7V < VVBAT < 18V

VEN = 5V 8 VBUSrec 0.6 × VVBAT V A

4.17 Receiver input hysteresis 7V < VVBAT < 18V

VHYS = Vth_rec – Vth_dom

8 VBUShys

0.175 × VVBAT V A

4.18 Duty cycle 1

7V < VVBAT < 18V THrec(max) =0 . 7 4 4× VVBAT THDom(max) = 0.581 × VVBAT tBit = 50µs D1 = tBus_rec(min)/(2 × tBit) Load1: 1nF + 1kΩ Load2: 10nF + 500Ω 8 D1 0.396 A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

19ATA6823C [DATASHEET] 9209F–AUTO–06/14

4.19 Duty cycle 2

7V < VVBAT < 18V THrec(min) =0 . 4 2 2× VVBAT THDom(min) = 0.284 × VVBAT tBit = 50µs D2 = tBus_rec(max)/(2×tBit) Load1: 1nF + 1kΩ Load2: 10nF + 500Ω 8 D2 0.581 A

4.20 Duty cycle 3

7V < VVBAT < 18V THrec(max) =0 . 7 7 8× VVBAT THDom(max) = 0.616 × VVBAT tBit = 96µs D3 = tBus_rec(min)/(2 × tBit) Load1: 1nF + 1kΩ Load2: 10nF + 500Ω 8 D3 0.417 A

4.21 Duty cycle 4

7V < VVBAT < 18V THrec(min) =0 . 3 8 9× VVBAT THDom(min) = 0.251 × VVBAT tBit = 96µs D4 = tBus_rec(max)/(2 × tBit) Load1: 1nF + 1kΩ Load2: 10nF + 500Ω 8 D4 0.590 A

4.22 Receiver propagation

7V < VVBAT < 18V trec_pd = max (trx_pdr, trx_pdf) 13 trx_pd 6 µs A 4.23 Symmetry of receiver propagation delay rising edge minus falling edge 7V < VVBAT < 18V trx_sym = trx_pdr – trx_pdf 13 trx_sym –2 +2 µs

4.24 Dominant time for wake-up

7V < VVBAT < 18V VLIN = 0V 8 TBUS 30 90 150 µs A

5 Control Inputs EN1, DIR, PWM, WD, TX

5.1 Input low-voltage threshold 12, 10,

11, 6, 9 VIL 0.3 × VVCC V A

5.2 Input high-voltage

12, 10, 11, 6, 9 VIH 0.7 × VVCC V A

5.3 Hysteresis 12, 10,

11, 6, 9 HYS 0.3 0.5 0.7 V A

5.4 Pull-down resistor EN1, DIR, PWM, WD 12, 10,

11, 6, RPD 25 50 100 kΩ A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

ATA6823C [DATASHEET] 9209F–AUTO–06/14

5.5 Pull-up resistor TX 9 RPU 25 50 100 kΩ A

5.6 Rise/fall time 12, 10,

11, 6, 9 trf 100 ns D

5.7 Debounce time EN1 (6) 12 tdb 2 × T100 3 × T100 µs B

6 Charge Pump

6.1 Charge pump voltage Load = 0A 21 VCP VVBAT

+ VVG V A

6.2 Charge pump voltage Load = 3mA,

CCP = 100nF 21 VCP VVBAT + VVG – 1 V A

6.3 Period charge pump

21 T100 9 11 µs A

6.4 CP load current in VG

without CP load Load = 0A 24 IVGCPz 0.6 mA A

6.5 CP load current in VG with

Load = 3mA, C CP = 100nF 24 IVGCP 4 mA A

6.6 Charge pump OK

21 VCPOK_UP 5.05 6.15 V A

6.7 Charge pump OK

threshold DOWN 21 VCPOK_DOWN 4.25 5.35 V A

7 H-bridge Driver

7.1 Low-side driver HIGH

output voltage 26, 27 VLxH VVG – 0.5V VVG V A

7.2 ON-resistance of sink

stage of pins L1, L2 26, 27 RDSON_LxL, x = 1, 2 20 Ω A

7.3 ON-resistance of source

stage of pins L1, L2 26, 27 RDSON_LxH, x = 1, 2 20 Ω A

7.4 Output peak current at pins

L1, L2, switched to LOW VLx = 3V 26, 27 ILxL, x = 1, 2 100 mA A

7.5 Output peak current at pins

L1, L2, switched to HIGH VLx = 3V 26, 27 ILxH, x = 1, 2 –100 mA A

7.6 Pull-down resistance at

pins L1, L2 26, 27 RPDLx x = 1, 2 30 140 kΩ A

7.7 ON-resistance of sink

stage of pins H1, H2 VSx = 0 18, 20 RDSON_HxL, x = 1, 2 20 Ω A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

21ATA6823C [DATASHEET] 9209F–AUTO–06/14

7.8 ON-resistance of source

stage of pins H1, H2 VSx = VVBAT 18, 20 RDSON_HxH, x = 1, 2 20 Ω A

7.9 Output peak current at pins

Hx, switched to LOW VVBAT = 13.5V VSx = VVBAT VHx = VVBAT + 3V 18, 20 IHxL, x = 1, 2 100 mA A

7.10 Output peak current at pins

Hx, switched to HIGH VVBAT = 13.5V VSx = VVBAT VHx = VVBAT + 3V 18, 20 IHxH, x = 1, 2 –100 mA A

7.11 Static switch output low

VSx = 0V IHx = 1mA ILx = 1mA 18, 20, 26, 27 VHxL, VLxL x = 1, 2 0.3 V A 7.12 Static high-side switch output high-voltage pins H1, H2 ILx = –10µA (PWM = static) 18, 20 VHxHstat1 (7) VVBAT + VVG – 1 VVBAT + VVG V A

7.13 Sink resistance between

VVBAT = VPBAT = 9V, I_VG = –20mA 17, 18, 19, 20 RPDHx 30 150 kΩ A Dynamic Parameters 7.15 Propagation delay time, low-side driver from high to low Figure 3-6 on page 12 V VBAT = 13.5V 26, 27 tLxHL 0.5 µs A 7.16 Propagation delay time, low-side driver from low to high VVBAT = 13.5V 26, 27 tLxLH 0.5 + tCC µs A 7.17 Fall time low-side driver VVBAT = 13.5V CGx = 5nF 26, 27 tLxf 0.5 µs A 7.18 Rise time low-side driver VVBAT = 13.5V 26, 27 tLxr 0.5 µs A 7.19 Propagation delay time, high-side driver from high to low Figure 3-6 on page 12 VVBAT = 13.5V 18, 20 tHxHL 0.5 µs A 7.20 Propagation delay time, high-side driver from low to high VVBAT = 13.5V 18, 20 tHxLH 0.5 + tCC µs A 7.21 Fall time high-side driver VVBAT = 13.5V, CGx = 5nF 18, 20 tHxf 0.5 µs A 7.22 Rise time high-side driver VVBAT = 13.5V 18, 20 tHxr 0.5 µs A 7.23 Cross conduction time RCC = 10kΩ, CCC = 1nF(8) 4 tCC 3.75 4.45 µs A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

ATA6823C [DATASHEET] 9209F–AUTO–06/14

7.24 External resistor 4 RCC 5 kΩ D

7.25 External capacitor 4 CCC 5 nF D

7.26 RON of tCC switching

transistor 4 RONCC 200 Ω A

7.28 Short circuit detection

(9) 17, 19 VSC 3.5 4 4.7 V A

7.29 Short circuit detection time (10) 17, 19 tSC 5 10 15 µs A

7.30 VG regulator output

VVBAT = VPBAT = 18V, I_VG = –20mA 24 VVG 11 14 V A

7.31 VG regulator output

VVBAT = VPBAT = 9V, I_VG = –20mA 24 VVGswitch 7 9 V A

8 Input EN2

8.1 Input low-voltage threshold 32 VIL 2.3 3.6 V A

8.2 Input high-voltage

threshold 32 VIH 2.8 4.0 V A 8.3 Hysteresis (6) 32 HYS 0.47 V A

8.4 Pull-down resistor 32 RPD 50 100 200 kΩ A

8.5 Rise/fall time 32 trf 100 ns D

8.6 Debounce time (6) 32 tdb 2 × T100 3 × T100 µs B

9 Diagnostic Outputs DG1, DG2, DG3

9.1 Low level output current VDG = 0.4V(6) 15, 16 IL 2 mA A 9.2 High level output current VDG = VCC – 0.4V(6) 15, 16 IH 1 mA A 8. Electrical Characteristics (Continued) All parameters given are valid for VTHUV ≤ VVBAT ≤ VTHOV and for –40°C ≤ ϑambient ≤ 125°C unless stated otherwise. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* * Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. EN, DIR, PWM = high 2. The use of X7R material is recommended 3. For higher values, stability at zero load is not guaranteed 4. Tested during qualification only 5. Value depends on T OSC; function tested with digital test pattern 6. Tested during characterization only 7. Supplied by charge pump 8. See Section 3.11.1 “Cross Conduction Time” on page 12 9. Voltage between source-drain of external switching transistors in active case 10. The short-circuit message will never be generated for switch-on time < t sc

23ATA6823C [DATASHEET] 9209F–AUTO–06/14 9. Application

9.1 General Remark

This section describes the principal application for which the ATA6823C was designed. Because Atmel® cannot be considered to understand fully all aspects of the system, application, and environment, no warranties of fitness for a particular purpose are given. 10. Errata

10.1 Faulty Pulse at DG1

A faulty pulse of approximately 100ns appears at pin 16 (DG1), signalizing short circuit condition, under following circumstances: General condition: PWM = HIGH and detected undervoltage of VBAT (signalized at pin 15 = DG2) or detected overvoltage of VBAT (signalized at pin 15 = DG2) or detected undervoltage of the charge pump (signalized at pin 15 = DG2) or overtemperature shutdown.

10.2 Problem Fix/Workaround

Set the software to ignore the faulty pulse. Table 9-1. Typical Ex ternal Components Component Function Value Tolerance CVINT Blocking capacitor at VINT 220nF, 10V, X7R 50% CVCC Blocking capacitor at VCC 2.2µF, 10V, X7R 50% CCC Cross conduction time definition capacitor Typical 330pF, 100V, COG RCC Cross conduction time definition resistor Typical 10kΩ CVG Blocking capacitor at VG Typical 470nF, 25V, X7R 50% CCP Charge pump capacitor Typical 220nF, 25V, X7R CVRES Reservoir capacitor Typical 470nF, 25V, X7R RRWD Watchdog time definition resistor Typical 51kΩ RLINex Pull-up resistor for LIN bus (master only) Typical 1kΩ CLINex Filter capacitor for LIN bus Typical 220pF, 100V

ATA6823C [DATASHEET] 9209F–AUTO–06/14 12. Package Information 11. Ordering Information Extended Type Number Package Remarks ATA6823C-PHQW QFN32 Pb-free Package Drawing Contact: packagedrawings@atmel.com GPC DRAWING NO. REV. TITLE 6.543-5097.01-4 1 02/24/03 Exposed pad 4.7x4.7 specifications according to DIN technical drawings Dimensions in mm Not indicated tolerances ± 0.05 3225 916 4.55 0.65 nom. 4.7 0.3 0.6 0.9±0.1 0.05-0.05

25ATA6823C [DATASHEET] 9209F–AUTO–06/14 13. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 9209F-AUTO-06/14 • Put datasheet in the latest template 9209E-AUTO-03/12 • Section 4 “Absolute Maximum Ratings” on page 13 changed 9209D-AUTO-11/11

• Figure 3-5 “Definition of Bus Timing Parameters” on page 10 changed
• Section 4 “Absolute Maximum Ratings” on page 15 changed
• Section 8 “Electrical Characteristics” numbers 4.8 and 4.12 on pages 19 to 20 changed 9209C-AUTO-01/11 • Section 3.3 “Wake-up and Sleep Mode Strategy” on page 7 changed 9209B-AUTO-11/10
• Section 8 “Electrical Characteristics” number 4.8b on page 19 added
• Table 9-1 “Typical External Components” on page 25 changed

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