Download PDFAT49LV1024A ATMEL
Document overview
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Technical content
Features
Fast Read Access Time – 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 1.5 Seconds Word-by-word Programming – 20 µs/Word Typical Hardware Data Protection Data Polling for End of Program Detection Small 10 x 14 mm VSOP Package Typical 10,000 Write Cycles
Description
The AT49BV/LV1024A is a 3-volt only in-system Flash memory. The 1-megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns with power dissipation of just 72 mW over the industrial temperature range. To allow for simple in-system reprogrammability, the AT49BV/LV1024A does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is simi- lar to reading from an EPROM. Reprogramming the AT49BV/LV1024A is performed by erasing a block of data (entire chip or main memory block) and then programming on a word by word basis. The typical word programming time is a fast 20 µs. The end of a program cycle can be optionally detected by the Data Polling feature. Once the end of a word program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. The optional 8K word boot block section includes a reprogramming write lock out fea- ture to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being erased or reprogrammed. 1-megabit (64K x 16) 3-volt Only Flash Memory AT49BV1024A AT49LV1024A Pin Configurations Pin Name Function A0 - A15 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O15 Data Inputs/Outputs NC No Connect AT49BV/LV1024A VSOP Top View Type 1 10 x 14 mm A10 A11 A12 A13 A14 A15 NC WE VCC NC CE I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8 GND OE I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND Rev. 3332B–FLASH–12/03
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3332B–FLASH–12/03 Block Diagram Device Operation READ: The AT49BV/LV1024A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. CHIP ERASE: When the boot block programming lockout feature is not enabled, the boot block and the main memory block will erase together from the same Chip Erase command (See Command Definitions table). If the boot block lockout function has been enabled, data in the boot section will not be erased. However, data in the main memory section will be erased. After a chip erase, the device will return to the read mode. MAIN MEMORY ERASE: As an alternative to the chip erase, a main memory block erase can be performed, which will erase all words not located in the boot block region to an FFFFH. Data located in the boot region will not be changed during a main memory block erase. The Main Memory Erase command is a six-bus cycle operation. The address (555H) is latched on the falling edge of the sixth cycle while the 30H data input is latched on the rising edge of WE . The main memory erase starts after the rising edge of WE of the sixth cycle. Please see Main Memory Erase cycle waveforms. The main memory erase operation is internally controlled; it will automatically time to completion. WORD PROGRAMMING: Once the memory array is erased, the device is programmed (to a logic “0”) on a word-by-word basis. Please note that a data “0” cannot be pro- grammed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the internal device command register and is a four-bus cycle opera- tion (please refer to the Command Definitions table). The device will automatically generate the required internal program pulses. The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs last, and the data latched on the rising edge of WE or CE, whichever occurs first. Programming is completed after the specified tBP cycle time. The Data Polling feature may also be used to indicate the end of a program cycle. BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. The size of the block is 8K words. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the OE, CE, AND WE LOGIC Y DECODER X DECODER INPUT/OUTPUT BUFFERS DATA LATCH Y-GATING OPTIONAL BOOT BLOCK (8K WORDS) MAIN MEMORY (56K WORDS) OE WE CE ADDRESS INPUTS VCC GND DATA INPUTS/OUTPUTS I/O15 - I/O0 2000H 1FFFH 0000H FFFFH
3332B–FLASH–12/03 device while data in the rest of the device is updated. This feature does not have to be activated; the boot block’s usage as a write-protected region is optional to the user. The address range of the boot block is 0000H to 1FFFH. Once the feature is enabled, the data in the boot block can no longer be erased or pro- grammed. Data in the main memory block can still be changed through the regular programming method and can be erased using either the Chip Erase or the Main Mem- ory Block Erase command. To activate the lockout feature, a series of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table. BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Product Identification Entry and Exit sections) a read from address location 0002H will show if programming the boot block is locked out. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be pro- grammed. The software product identification exit code should be used to return to standard operation. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see “Operating Modes” (for hardware operation) or “Software Product Identi- fication Entry/Exit” on page 11. The manufacturer and device code is the same for both modes. DATA POLLING: The AT49BV/LV1024A features Data Polling to indicate the end of a program or erase cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. Data Polling may begin at any time during the program cycle. TOGGLE BIT: In addition to Data Polling, the AT49BV/LV1024A provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a pro- gram cycle. HARDWARE DATA PROTECTION: Hardware features protect against inadvertent writes to the AT49BV/LV1024A in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (c) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
4 AT49BV/LV1024A
3332B–FLASH–12/03 Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex). The ADDRESS FORMAT in each bus cycle is as follows: A11 - A0 (Hex); A11 - A15 (Don’t Care). 2. Since A11 is a Don’t Care, AAA can be replaced with 2AA. 3. The 8K word boot sector has the address range 0000H to 1FFFH. 4. Either one of the Product ID Exit commands can be used. Command Definition (in Hex) Command Sequence Bus Cycles 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read 1 Addr D OUT Chip Erase 6 555 AA AAA (2) 55 555 80 555 AA AAA 55 555 10 Main Memory Erase 6 555 AA AAA 55 555 80 555 AA AAA 55 555 30 Word Program 4 555 AA AAA 55 555 A0 Addr D IN Boot Block Lockout(3) 6 555 AA AAA 55 555 80 555 AA AAA 55 555 40 Product ID Entry 3 555 AA AAA 55 555 90 Product ID Exit(4) 3 555 AA AAA 55 555 F0 Product ID Exit(4) 1 xxx F0 Absolute Maximum Ratings* Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. All Input Voltages (including NC Pins) All Output Voltages Voltage on OE
3332B–FLASH–12/03 Notes: 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 4. Manufacturer Code: 001FH; Device Code: 0087H. 5. See details under “Software Product Identification Entry/Exit” on page 11. Note: 1. In the erase mode, ICC is 40 mA. DC and AC Operating Range AT49LV1024A-45 Operating Temperature (Case) Ind. -40° C - 85° C VCC Power Supply 3.0V to 3.6V Operating Modes Mode CE OE WE Ai I/O Read VIL VIL VIH Ai D OUT Program(2) VIL VIH VIL Ai D IN Standby/Write Inhibit VIH X(1) X X High-Z Program Inhibit X X VIH Program Inhibit X VIL X Output Disable X VIH X High-Z Product Identification Hardware VIL VIL VIH A1 - A15 = VIL, A9 = VH (3), A0 = VIL Manufacturer Code(4) A1 - A15 = VIL, A9 = VH (3), A0 = VIH Device Code(4) Software(5) A0 = VIL, A1 - A15 = VIL Manufacturer Code(4) A0 = VIH, A1 - A15 = VIL Device Code(4) DC Characteristics Symbol Parameter Condition Min Max Units ILI Input Load Current VIN = 0V to VCC 10.0 µA ILO Output Leakage Current VI/O = 0V to VCC 10.0 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 50.0 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC 0.5 mA ICC (1) VCC Active Current f = 5 MHz; IOUT = 0 mA 20.0 mA VIL Input Low Voltage 0.6 V VIH Input High Voltage 2.0 V VOL Output Low Voltage IOL = 2.1 mA 0.45 V VOH1 Output High Voltage IOH = -400 µA 2.4 V
6 AT49BV/LV1024A
3332B–FLASH–12/03 AC Read Waveforms (1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC . 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC . 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. AC Read Characteristics Symbol Parameter AT49LV1024A-45 UnitsMin Max tACC Address to Output Delay 45 ns tCE (1) CE to Output Delay 45 ns tOE (2) OE to Output Delay 0 25 ns tDF (3)(4) CE or OE to Output Float 0 25 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 ns
3332B–FLASH–12/03 Input Test Waveforms and Measurement Level tR , tF < 5 ns Output Test Load Note: 1. This parameter is characterized and is not 100% tested. 2.4V 0.4V OUTPUT PIN 3.0V 30 pF 1.8K 1.3K Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions C IN 4 6 pF VIN = 0V C OUT 8 12 pF VOUT = 0V
8 AT49BV/LV1024A
3332B–FLASH–12/03 AC Word Load Waveforms WE Controlled CE Controlled AC Word Load Characteristics Symbol Parameter Min Max Units tAS , tOES Address, OE Setup Time 0 ns tAH Address Hold Time 35 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 35 ns tDS Data Setup Time 35 ns tDH , tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 35 ns tDHtDS tAS tAH tWP CE ADDRESS DATA IN OE tOES tOEH WE tCS tCH tWPH tDHtDS tAS tAH tWP WE ADDRESS DATA IN OE tOES tOEH CE tCS tCH tWPH
3332B–FLASH–12/03 Program Cycle Waveforms Main Memory or Chip Erase Cycle Waveforms Notes: 1. OE must be high only when WE and CE are both low. 2. For chip erase, the address should be 10H. For a main memory erase, the data should be 30H. Program Cycle Characteristics Symbol Parameter Min Typ Max Units tBP Word Programming Time 20 50 µs tAS Address Setup Time 0 ns tAH Address Hold Time 35 ns tDS Data Setup Time 35 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 35 ns tWPH Write Pulse Width High 35 ns tEC Erase Cycle Time 1.5 3 seconds A0-A15 OE AA80 NOTE 255 55 555 555 555 AA WORD 0 WORD 1 WORD 2 WORD 3 WORD 4 WORD 5 AAA AAA tWPHtWP CE WE A0-A15 DATA tAS tAH tEC tDH tDS 555
10 AT49BV/LV1024A
3332B–FLASH–12/03 Notes: 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 6. Data Polling Waveforms Notes: 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 6. Toggle Bit Waveforms(1)(2)(3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. Data Polling Characteristics(1) Symbol Parameter Min Typ Max Units tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay(2) ns tWR Write Recovery Time 0 ns Toggle Bit Characteristics(1) Symbol Parameter Min Typ Max Units tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay(2) ns tOEHP OE High Pulse 150 ns tWR Write Recovery Time 0 ns
3332B–FLASH–12/03 Software Product Identification Entry(1) Software Product Identification Exit(1) Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex); Address Format: A11 - A0 (Hex); A11 - A15 (Don’t Care). 2. A1 - A15 = VIL. Manufacturer Code is read for A0 = VIL; Device Code is read for A0 = VIH. 3. The device does not remain in identification mode if powered down. 4. The device returns to standard operation mode. 5. Manufacturer Code: 001FH Device Code: 0087H LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 90 TO ADDRESS 555 ENTER PRODUCT IDENTIFICATION MODE (2)(3)(5) LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA F0 TO ADDRESS 555 EXIT PRODUCT IDENTIFICATION MODE (4) OR LOAD DATA F0 TO ANY ADDRESS EXIT PRODUCT IDENTIFICATION MODE (4) Boot Block Lockout Enable Algorithm(1) Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex); Address Format: A11 - A0 (Hex); A11 - A15 (Don’t Care). 2. Boot Block Lockout feature enabled. LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 80 TO ADDRESS 555 LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 40 TO ADDRESS 555 PAUSE 1 Second(2)
12 AT49BV/LV1024A
3332B–FLASH–12/03 AT49BV/LV1024A Ordering Information tACC (ns) ICC (mA) Ordering Code Package Operation RangeActive Standby 45 20 0.05 AT49LV1024A-45VC 40V Commercial (0° to 70° C) 45 20 0.05 AT49LV1024A-45VL Lead Free 40V Commercial (0° to 70° C) Package Type 40V 40-lead, Thin Small Outline Package (VSOP) (10 mm x 14 mm)
3332B–FLASH–12/03 Packaging Information 40V – VSOP
2325 Orchard Parkway
San Jose, CA 95131 TITLE DRAWING NO. R REV. 40V, 40-lead (10 x 14 mm Package) Plastic Thin Small Outline Package, Type I (VSOP) B40V 10/18/01 PIN 1 D1 D Pin 1 Identifier be E A A2 SEATING PLANE 0º ~ 8º c L GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE Notes: 1. This package conforms to JEDEC reference MO-142, Variation CA. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. A – – 1.20 A1 0.05 – 0.15 A2 0.95 1.00 1.05 D 13.80 14.00 14.20 D1 12.30 12.40 12.50 Note 2 E 9.90 10.00 10.10 Note 2 L 0.50 0.60 0.70 L1 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e 0.50 BASIC
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