AT41533 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 2
Technical content
SiliconNPNPowerTransistor AT41533 www.iscsemi.com 1
DESCRIPTION
- Collector-EmitterBreakdown Voltage -V(BR)CEO=12V(Min)
- SOT-23Package
APPLICATIONS
- General Electronic Equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 20 V VCEO Collector-EmitterVoltage 12 V VEBO Emitter-BaseVoltage 1.5 V IC CollectorCurrent-Continuous 50 mA PC CollectorPowerDissipation 225 mW TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ ELECTRICALCHARACTERISTICS （TC=25℃ unlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA,IB=0A 12 -- -- V ICBO Collector-BaseCut-OffCurrent VCB=3V,IE=0A -- -- 0.2 uA IEBO EmitterCuto-ffCurrent VEB=1V,IC=0A -- -- 1.0 uA hFE DCCurrentGain IC=5mA,VCE=5V 30 -- 270
SiliconNPNPowerTransistor AT41533 www.iscsemi.com 2 PACKAGEOUTLINE PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.