AT32032 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 2
Technical content
SiliconNPNPowerTransistor AT32032 www.iscsemi.com 1
DESCRIPTION
- Collector-EmitterBreakdown Voltage -V(BR)CEO=5.5V(Min)
- SO-T323 Package
APPLICATIONS
- PDC, PHS,CDMA
- CommunicationTerminal ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 11 V VCEO Collector-EmitterVoltage 5.5 V VEBO Emitter-BaseVoltage 1.5 V IC CollectorCurrent-Continuous 32 mA PT TotalPowerDissipation 200 mW TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ ELECTRICALCHARACTERISTICS （TC=25℃ unlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)CBO Collector-BaserBreakdownVoltage IC=1uA,IB=0A 11 -- -- V ICBO Collector-BaseCut-OffCurrent VCB=3V -- -- 2.0 uA IEBO EmitterCutoff Current VEB=1V -- -- 5.0 uA hFE DCCurrentGain IC=5mA,VCE=2.7V 70 -- 300
SiliconNPNPowerTransistor AT32032 www.iscsemi.com 2 PACKAGEOUTLINE PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.