APTM100A13SCG ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 6
Technical content
SiCdiodesMOSFETPowerModule www.iscsemi.com 1
FEATURES
- VDSS=1000V,RDS(on)=130mΩ（typ）@Tj=25℃
- Kelvinsourceforeasydrive
- Verylowstray inductance
- Highlevelofintegration
APPLICATIONS
- Motorcontrol
- SwitchedModePower Supplies
- UninterruptiblePowerSupplies AbsoluteMaximumRatings(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceBreakdownVoltage 1000 V VGS Gate-SourceVoltage ±30 V ID ContinuousDrainCurrent Tc=25℃ Tc=80℃ 65 A 49 A IDM MaximumPulsedDrain-SourceCurrent 240 A TJ OperatingJunctionTemperature -40~150 ℃ TSTG StorageTemperatureRange -40~125 ℃ PD Maximumpowerdissipation 1250 W
SiCdiodesMOSFETPowerModule www.iscsemi.com 2 MOSFETChaRACTERISTICS(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VGS(th) GateThresholdVoltage VDS =VGS,ID =6mA 3.0 -- 5.0 V RDS(on) Drain-SourceOn-stageResistance VGS=10V;ID=32.5A -- 130 156 mΩ IGSS GateSourceLeakageCurrent VGS= ±30V;VDS=0V -- -- ±450 nA IDSS ZeroGateVoltageDrainCurrent VDS =1000V,VGS =0V,Tj=25℃ -- -- 600 uA VDS =800V,VGS =0V,Tj=125℃ -- -- 2 mA Ciss InputCapacitance VGS =0V, VDS =25V, f=1MHz -- 15.6 -- nFCoss OutputCapacitance -- 2.6 -- Crss ReverseTransferCapacitance -- 0.43 -- Qg TotalGateCharge VGS =10V, VBus=500V, ID=65A -- 570 -- nCQgs Gate-SourceCharge -- 75 -- Qgd Gate-DrainCharge -- 363 -- Eon Turn-OnSwitchingEnergy TJ=25°C, VGS=15V,ID=65A, VBus=667V,Rg=0.5Ω -- 1280 -- uJ Eoff Turn-OffSwitchingEnergy -- 463 -- Eon Turn-OnSwitchingEnergy TJ=25°C, VGS=15V,ID=65A, VBus=667V,Rg=0.5Ω -- 2673 -- uJ Eoff Turn-OffSwitchingEnergy -- 571 -- RthJC JunctiontoCaseThermalResistance -- -- 0.1 ℃/W
SiCdiodesMOSFETPowerModule www.iscsemi.com 3 SeriesDiodeCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VRRM MaximumRepetitiveReverseVoltage 1000 -- -- V VF DiodeForwardVoltage IF=120A -- 1.9 2.5 VIF=240A -- 2.2 -- trr ReverseRecoveryTime ISD =120A,VR =667V, di/dt=400A/us -- 282 -- ns Qrr ReverseRecoveryCharge -- 1521 -- nC IF DCForwardCurrent TC=100℃ -- 120 -- A IRM MaximumReverseLeakage Current VR=1000V -- -- 350 uA RthJC JunctiontoCaseThermalResistance -- -- 0.46 ℃/W SiCDiodeCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VRRM MaximumRepetitiveReverseVoltage 1200 -- -- V VF DiodeForwardVoltage IF=40A -- 1.6 1.8 V QC TotalCapacitiveCharge IF =40A,VR =600V, di/dt=2000A/us -- 113 -- nC Q otalCapacitance f=1MHz,VR =200V -- 361 -- pF f=1MHz,VR=400V 265 IF DiodeForwardCurrent IF=40A,TC=125℃ -- 40 -- A IRM MaximumReverseLeakage Current VR=1200V,Tj=25℃ VR=1200V,Tj=125℃ -- 400 1600 uA 800 8000 RthJC JunctiontoCaseThermalResistance -- -- 0.35 ℃/W
SiCdiodesMOSFETPowerModule www.iscsemi.com 4 ModuleCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Visol CaseIsolationVoltage t=1min,f=50Hz 4000 -- -- V Tj MaximumJunctionTemperature -- -40 -- 150 ℃ TSTG OperatingJunctionTemperature -- -40 -- 125 ℃ Torque MountingTorque Toheatsink 3 -- 5 N.m Forterminals 2 -- 3.5 Wt PackageWeight -- -- -- 300 g
SiCdiodesMOSFETPowerModule www.iscsemi.com 5 CircuitDiagram PackageDimensions(UNIT:MM):
SiCdiodesMOSFETPowerModule www.iscsemi.com 6 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.