APS11000LLHALT-0SH

APS11000 ALLEGRO

Document overview

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Technical content

DESCRIPTION

The APS11000 and APS11060 families of Hall-effect switches are AEC-Q100 qualified for 24 V automotive applications and compliant with ISO 26262:2011 ASIL A. These sensors are temperature-stable and suited for operation over extended junction temperature ranges up to 165°C. The APS11000 and APS11060 families are available in several different magnetic sensitivities and polarities to offer flexible options for system design. They are available in active high and active low variants for ease of integration into electronic subsystems. The APS11000 features a Hall-effect element that is sensitive to magnetic flux perpendicular to the face of the IC package. The APS11060 features a vertical Hall-effect sensing element sensitive to magnetic flux parallel to the face of the IC package. APS11060-DS, Rev. 2 MCO-0000392 FEATURES AND BENEFITS

• ASIL A functional safety compliance
• Planar and vertical Hall-effect sensor ICs
• 3.3 to 24 V operation
• Automotive-grade ruggedness and fault tolerance □ Extended AEC-Q100 qualification □ Internal protection circuits enable 40 V load dump compliance □ Reverse-battery protection □ Output short-circuit and overvoltage protection □ Operation from –40°C to 165°C junction temperature □ High EMC immunity
• Omnipolar and unipolar switch threshold options
• Choice of output polarity
• Open-drain output
• Solid-state reliability Vertical and Planar Hall-Effect Switches PACKAGES Figure 1: Functional Block Diagram Not to scale APS11000 and APS11060 3-pin SOT23W (suffix LH) 3-pin SIP (suffix UA) October 22, 2018 Output Control VCC GND VOUT Hall Amp. Dynamic Offset Cancellation Low-Pass Filter Current Limit To All Subcircuits Sample, Hold & Averaging Schmitt Trigger POKRegulator Continued on next page... TYPICAL APPLICATIONS
• Gear shift selectors and driver controls (PRNDL)
• Human-machine interfaces (HMI) and driver controls
• Open/close sensor for LCD screens/doors/lids/trunks
• Clutch/brake position sensor
• Magnetically actuated lighting
• Wiper home/end position sensor
• End of travel and index sensors

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A. www.allegromicro.com The devices include on-board reverse-battery and overvoltage protection for operating directly from an automobile battery, as well as protection from shorts to ground by limiting the output current until the short is removed. The device is especially suited for operation from unregulated supplies. Two package styles provide a choice of through-hole or surface mounting. Package type LH is a modified 3-pin SOT23W surface mount package, while package type UA is a 3-pin ultra-mini SIP for through-hole mounting. Both packages are lead (Pb) free, with 100% matte-tin-plated leadframes. DESCRIPTION (continued) RoHS COMPLIANT L Operang Mode S – Unipolar South Sensing P – Omnipolar (North and South) Sensing N – Unipolar North Sensing Allegro Idenfier (Device Family) APS – Digital Posion Sensor Ambient Operang Temperature Range L – -40°C to +150°C Instrucons (Packing) LT – 7-in. reel, 3,000 pieces/reel (LH Only) LX – 13-in. reel, 10,000 pieces/reel (LH Only) Package Designaon LHA – 3-pin SOT23W Surface Mount UAA – 3-pin SIP Through-Hole Complet e Part Number Format Device Switch Threshold Magnitude 0 – 35 G BOP, 25 G BRP (typ.) 1 – 95 G BOP, 70 G BRP (typ.) 2 – 150 G BOP, 125 G BRP (typ.) 3 – 280 G BOP, 225 G BRP (typ.) Output Polarity for B > BOP H – High (Output Off) L – Low (Output On) -L L H A S0 L Configuraon Opons T A P S 1 1 0 0 0 Allegro Device Number 11000 – Planar Hall-effect Switch 11060 – Vercal Hall-effect Switch E.g. APS11060LLHAXX-XXX APS11060LLHALT- 0SL A P S 1 1 0 6 0 Planar Vercal [blank] – bulk, 500 pieces/bag (UA Only)

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com SELECTION GUIDE Part Number [1] Packing [2] Mounting Output State for B > BOP Sensing Orientation Operating Mode APS11000LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount Low Z-Axis Unipolar South APS11000LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount Low APS11000LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole Low APS11000LLHALT-0SH 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount High APS11000LLHALX-0SH 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount High APS11000LUAA-0SH Bulk, 500 pieces/bag 3-pin SIP through-hole High APS11000LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount Low Z-Axis OmnipolarAPS11000LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount Low APS11000LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole Low APS11060LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount Low X-Axis Unipolar South APS11060LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount Low X-Axis APS11060LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole Low Y-Axis APS11060LLHALT-0SH 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount High X-Axis APS11060LLHALX-0SH 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount High X-Axis APS11060LUAA-0SH Bulk, 500 pieces/bag 3-pin SIP through-hole High Y-Axis APS11060LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount Low X-Axis OmnipolarAPS11060LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount Low X-Axis APS11060LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole Low Y-Axis [1] Contact Allegro MicroSystems for options not listed in the selection guide. [2] Contact Allegro MicroSystems for additional packing options.

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Notes Rating Units Supply Voltage [1] VCC 40 V Reverse Supply Voltage [1] VRCC –18 V Output Voltage [1] VOUT –0.3 to 32 V Output Current [2] IOUT 40 mA Reverse Output Current IROUT –50 mA Magnetic Flux Density [3] B Unlimited G Operating Ambient Temperature TA Range L –40 to 150 °C Maximum Junction Temperature TJ(max) 165 °C Storage Temperature Tstg –65 to 170 °C [1] This rating does not apply to extremely short voltage transients. Transient events such as Load Dump and/or ESD have individual, specific ratings. [2] Through short-circuit current limiting device. [3] Guaranteed by design. ESD PERFORMANCE [4] Characteristic Symbol Notes Rating Units ESD Voltage VESD(HBM) Human Body Model according to AEC-Q100-002 ±11 kV VESD(CDM) Charged Device Model according to AEC-Q100-011 ±1 kV [4] ESD ratings provided are based on qualification per AEC-Q100 as an expected level of ESD robustness.

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com PINOUT DIAGRAMS AND TERMINAL LIST (View from branded face) 1 32GND VOUT VCC 1 2

3 GND

(suffix LH) 3-pin SIP (suffix UA) Terminal List Name Description Number LH UA VCC Connects power supply to chip 1 1 VOUT Output from circuit 2 3 GND Terminal for ground connection 3 2

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com ELECTRICAL CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 µF, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit SUPPLY AND STARTUP Supply Voltage VCC 3.3 – 24 V Supply Current ICC APS11000 1 2.2 4 mA APS11060 1 2.5 5 mA Power-On Time [2] tPO VCC ≥ VCC(min) – 180 350 µs Power-On State [5] POS VCC ≥ VCC(min), t < tPO High – Undervoltage Lockout [3] VCC(UV)EN VCC ≥ VCC(min) → VCC < VCC(min) – 2 – V VCC(UV)DIS VCC < VCC(min) → VCC ≥ VCC(min) – 2.3 – V UVLO Reset Time [3] tPOR – 100 – µs CHOPPER STABILIZATION AND OUTPUT MOSFET CHARACTERISTICS Chopping Frequency fC – 800 – kHz Output Leakage Current [4] IOUTOFF VOUT(OFF) = 12 V, TA = –40°C to 85°C, output off, VCC ≥ VCC(min), t > tPO – – 0.1 µA Output Leakage Current IOUTOFF VOUT(OFF) = 24 V, output off, VCC ≥ VCC(min), t > tPO – – 1 µA Output Leakage Current, Power-On [4][5] IOUTOFF(PO) VCC ≥ VCC(min), t < tPO – – 95 µA Output Saturation Voltage VOUT(SAT) Output on, IOUT = 5 mA – 100 500 mV Output Off Voltage VOUT(OFF) – – 24 V Output Rise Time [6][7] tr CL = 20 pF, RPULL-UP = 4.8 kΩ – 0.2 2 µs Output Fall Time [6][7] tf CL = 20 pF, RPULL-UP = 4.8 kΩ – 0.1 2 µs ON-BOARD PROTECTION Output Short-Circuit Current Limit IOM Output on 15 – 40 mA Output Zener Clamp Voltage VZ(OUT) IOUT = 1.5 mA, TA = 25°C 32 – – V Supply Zener Clamp Voltage VZ ICC = ICC(max) + 3 mA, TA = 25°C 40 – – V Reverse Battery Zener Clamp Voltage VRZ ICC = –5 mA, TA = 25°C – – –18 V Reverse Battery Current IRCC VCC = –18 V, TA = 25°C –5 – – mA [1] Typical data is at TA = 25°C and VCC = 12 V unless otherwise noted. [2] Measured from VCC ≥ 3.3 V to valid output. [3] See Undervoltage Lockout section for operational characteristics. [4] Guaranteed by device design and characterization. [5] See Power-On Behavior section and Figure 4. [6] CL = oscilloscope probe capacitance. [7] See Figure 2 - Definition of Output Rise and Fall Time. Figure 2: Definition of Output Rise and Fall TimeVOUT t VOUT(OFF) VOUT(SAT) 90% 10% 90% 10% tf tr

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com MAGNETIC CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 µF, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2] -0Px OPTION Operate Point BOPS -0Px Option – 35 70 G BOPN -0Px Option –70 –35 – G Release Point BRPS -0Px Option 5 25 – G BRPN -0Px Option – –25 –5 G Hysteresis BHYS -0Px Option 5 15 25 G -0Sx OPTION Operate Point BOPS -0Sx Option ‒ 35 70 G Release Point BRPS -0Sx Option 5 25 ‒ G Hysteresis BHYS -0Sx Option 5 15 25 G -0Nx OPTION Operate Point BOPN -0Nx Option ‒70 ‒35 ‒ G Release Point BRPN -0Nx Option ‒ ‒25 ‒5 G Hysteresis BHYS -0Nx Option 5 15 25 G [1] Typical data are at TA = 25°C and VCC = 12 V unless otherwise noted. [2] Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields. Figure 3: Hall Switch Output State vs. Magnetic Field B- indicates increasing north polarity magnetic field strength, and B+ indicates increasing south polarity magnetic field strength. Switch to On Switch to Off Switch to Off Switch to On BOPN BRPN BRPS BOPS B- B+0 BHYS BHYS VOUT(SAT) VOUT(OFF) VOUT(SAT) VOUT(OFF) Switch to On Switch to Off Switch to Off Switch to On BOPN BRPN BRPS BOPS BHYS BHYS B- B+0 VOUT(SAT) VOUT(OFF) VOUT(SAT) VOUT(OFF) Omnipolar “-xPL” Switch to On Switch to Off BOPN BRPN VOUT(SAT) VOUT(OFF) B- 0 VOUT BHYS Switch to Off Switch to On VOUT(SAT) VOUT(OFF) BHYS BOPN BRPN B- 0

0 VOUT

“-xNL” Unipolar North “-xNH” Omnipolar “-xPH” Switch to Off Switch to On BRPS BOPS VOUT(SAT) VOUT(OFF) B+0 BHYS VOUT Switch to On Switch to Off VOUT(SAT) VOUT(OFF) BHYS BRPS BOPS B+0 Unipolar South “-xSL” Unipolar South “-xSH” VOUT Standard Output Polarity Inverted Output Polarity

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com MAGNETIC CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 µF, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2] -1Px OPTION [3] Operate Point BOPS -1Px Option 50 95 135 G BOPN -1Px Option ‒135 ‒95 ‒50 G Release Point BRPS -1Px Option 40 70 110 G BRPN -1Px Option ‒110 ‒70 ‒40 G Hysteresis BHYS -1Px Option 10 25 42 G -1Sx OPTION [3] Operate Point BOPS -1Sx Option 50 95 135 G Release Point BRPS -1Sx Option 40 70 110 G Hysteresis BHYS -1Sx Option 10 25 42 G -1Nx OPTION [3] Operate Point BOPN -1Nx Option ‒135 ‒95 ‒50 G Release Point BRPN -1Nx Option ‒110 ‒70 ‒40 G Hysteresis BHYS -1Nx Option 10 25 42 G -2Px OPTION [3] Operate Point BOPS -2Px Option 120 150 200 G BOPN -2Px Option ‒200 ‒150 ‒120 G Release Point BRPS -2Px Option 110 125 190 G BRPN -2Px Option ‒190 ‒125 ‒110 G Hysteresis BHYS -2Px Option 10 25 42 G -2Sx OPTION [3] Operate Point BOPS -2Sx Option 120 150 200 G Release Point BRPS -2Sx Option 110 125 190 G Hysteresis BHYS -2Sx Option 10 25 42 G -2Nx OPTION [3] Operate Point BOPN -2Nx Option ‒200 ‒150 ‒120 G Release Point BRPN -2Nx Option ‒190 ‒125 ‒110 G Hysteresis BHYS -2Nx Option 10 25 42 G [1] Typical data are at TA = 25°C and VCC = 12 V unless otherwise noted. [2] Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields. [3] Contact Allegro MicroSystems for availability.

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com PACKAGE THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information. Characteristic Symbol Test Conditions Value Units Package Thermal Resistance RθJA Package LH, 1-layer PCB with copper limited to solder pads 228 °C/W Package LH, 2-layer PCB with 0.463 in.2 of copper area each side connected by thermal vias 110 °C/W Package UA, 1-layer PCB with copper limited to solder pads 165 °C/W 25 45 65 85 105 125 145 165 185 Maximum Allowable VCC (V) Temperature (°C) Power Derating Curve TJ(max) = 165°C; ICC = ICC(max), IOUT = 0 mA (Output Off) VCC(max) VCC(min) Package UA, 1-layer PCB (RθJA = 165°C/W) Package LH, 1-layer PCB (RθJA = 228°C/W) Package LH, 2-layer PCB (RθJA = 110°C/W) TJ(max) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 25 45 65 85 105 125 145 165 185 Power Dissipation, PD (mW) Temperature (°C) Power Dissipation versus Ambient Temperature Package LH, 2-layer PCB (RθJA = 110°C/W) Package UA, 1-layer PCB (RθJA = 165°C/W) Package LH, 1-layer PCB (RθJA = 228°C/W)

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com CHARACTERISTIC PERFORMANCE DATA

Electrical Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160 ICC (µA) TA (°C) Average Supply Current versus Ambient Temperature (Output Off) 3.3 VCC (V) 2 6 10 14 18 22 26 ICC (µA) VCC (V) Average Supply Current versus Supply Voltage (Output Off) -40 150 TA (°C) 100 120 140 160 180 200 220 -60 -40 -20 0 20 40 60 80 100 120 140 160 tPERIOD (ms) TA (°C) Average Sleep Mode Period versus Ambient Temperature 3.3 VCC (V) 100 120 140 160 180 200 220 2 6 10 14 18 22 26 tPERIOD (ms) VCC (V) Average Sleep Mode Period versus Supply Voltage -40 150 TA (°C) 100 150 200 250 300 350 400 450 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 VOUT(SAT) (mV) TA (°C) Average Output Saturation Voltage versus Ambient Temperature for IOUT = 5 mA 3.3 VCC (V) 100 150 200 250 300 350 400 450 500 2 6 10 14 18 22 26 VOUT(SAT) (mV) VCC (V) Average Output Saturation Voltage versus Supply Voltage for IOUT = 5 mA -40 150 TA (°C) -60 -40 -20 0 20 40 60 80 100 120 140 160 ICC (µA) TA (°C) Average Supply Current versus Ambient Temperature (Output Off) 3.3 VCC (V) 2 6 10 14 18 22 26 ICC (µA) VCC (V) Average Supply Current versus Supply Voltage (Output Off) -40 150 TA (°C) 100 120 140 160 180 200 220 -60 -40 -20 0 20 40 60 80 100 120 140 160 tPERIOD (ms) TA (°C) Average Sleep Mode Period versus Ambient Temperature 3.3 VCC (V) 100 120 140 160 180 200 220 2 6 10 14 18 22 26 tPERIOD (ms) VCC (V) Average Sleep Mode Period versus Supply Voltage -40 150 TA (°C) 100 150 200 250 300 350 400 450 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 VOUT(SAT) (mV) TA (°C) Average Output Saturation Voltage versus Ambient Temperature for IOUT = 5 mA 3.3 VCC (V) 100 150 200 250 300 350 400 450 500 2 6 10 14 18 22 26 VOUT(SAT) (mV) VCC (V) Average Output Saturation Voltage versus Supply Voltage for IOUT = 5 mA -40 150 TA (°C) -60 -40 -20 0 20 40 60 80 100 120 140 160 ICC (µA) TA (°C) Average Supply Current versus Ambient Temperature (Output Off) 3.3 VCC (V) 2 6 10 14 18 22 26 ICC (µA) VCC (V) Average Supply Current versus Supply Voltage (Output Off) -40 150 TA (°C) 100 120 140 160 180 200 220 -60 -40 -20 0 20 40 60 80 100 120 140 160 tPERIOD (ms) TA (°C) Average Sleep Mode Period versus Ambient Temperature 3.3 VCC (V) 100 120 140 160 180 200 220 2 6 10 14 18 22 26 tPERIOD (ms) VCC (V) Average Sleep Mode Period versus Supply Voltage -40 150 TA (°C) 100 150 200 250 300 350 400 450 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 VOUT(SAT) (mV) TA (°C) Average Output Saturation Voltage versus Ambient Temperature for IOUT = 5 mA 3.3 VCC (V) 100 150 200 250 300 350 400 450 500 2 6 10 14 18 22 26 VOUT(SAT) (mV) VCC (V) Average Output Saturation Voltage versus Supply Voltage for IOUT = 5 mA -40 150 TA (°C) 0.5 1.5 2.5 3.5 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ICC (mA) TA (°C) Supply Current versus Ambient Temperature (Output Off) 3.3 3.3 VCC (V) APS11000 APS11060 0.5 1.5 2.5 3.5 4.5 2 6 10 14 18 22 26 ICC (mA) VCC (V) Supply Current versus Supply Voltage (Output Off) -40 150 -40 150 TA (°C) APS11000 APS11060

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com CHARACTERISTIC PERFORMANCE DATA Magnetic Characteristics -70 -50 -30 -10 -60 -40 -20 0 20 40 60 80 100 120 140 160 BOP (G) TA (°C) Average Operate Point versus Ambient Temperature 3.3 3.3 VCC (V) BOPS BOPN -70 -50 -30 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 BOP (G) VCC (V) Average Operate Point versus Supply Voltage -40 150 -40 150 TA (°C) BOPS BOPN -50 -40 -30 -20 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 BRP (G) VCC (V) Average Release Point versus Supply Voltage -40 150 -40 150 TA (°C) BRPS BRPN -50 -40 -30 -20 -10 -60 -40 -20 0 20 40 60 80 100 120 140 160 BRP (G) TA (°C) Average Release Point versus Ambient Temperature 3.3 3.3 VCC (V) BRPS BRPN 7.5 12.5 17.5 22.5 2 4 6 8 10 12 14 16 18 20 22 24 26 BHYS (G) VCC (V) Average Hysteresis versus Supply Voltage -40 150 -40 150 TA (°C) BHYS(S) BHYS(N) 7.5 12.5 17.5 22.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 BHYS (G) TA (°C) Average Hysteresis versus Ambient Temperature 3.3 3.3 VCC (V) BHYS(S) BHYS(N)

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com FUNCTIONAL DESCRIPTION Power-On Behavior Device power-on begins when the supply voltage reaches VCC(min). During the power-on time, tPO, the device output is off with the exception of the leakage current, IOUTOFF(PO). Use of a large pull-up resistor, RPULL-UP (see Figure 6), can influence the Power-On State (POS) voltage level on the output pin during tON. The output voltage level during the POS is a function of the pull- up resistor and pull-up voltage. The level can be determined by subtracting the voltage drop created by R PULL-UP and IOUTOFF(PO) from the pull-up voltage. To retain a power-on output voltage level above V PULL-UP/2, a pull-up resistor less than or equal to 20 kΩ is recommended. After power-on is complete and the power-on time has elapsed, the device output will correspond with the applied magnetic field for B > B OP and B < BRP. Powering-on the device in the hysteresis range (less than BOP and higher than BRP) will cause the device output to remain off. A valid output state is attained after the first excursion beyond BOP or BRP. Undervoltage Lockout Operation The APS11000 and APS11060 have an internal diagnostic to check the voltage supply (an undervoltage lockout regulator). When the supply voltage falls below the undervoltage lockout voltage threshold, V CC(UV)EN, the device enters reset, where the output state returns to the Power-On State (POS) until VCC is increased to VCC(UV)DIS. Once the VCC(UV)DIS threshold is reached, the power-on sequence begins and the output will cor- respond with the applied magnetic field for B > BOP and B < BRP after tPOR has elapsed. In the case the supply voltage does not return to these operational levels, or if the applied magnetic field is within the hysteresis range, the output will remain in the power- on state. See Figure 4 for an example of the undervoltage lockout behavior. Figure 4: Power-On and Undervoltage Lockout Behavior Output State , “L” Polarity Supply Voltage Key POS B > BOP B < BOP Output State , “H” Polarity Key POS B > B OP, BRP < B < BOP B < BRP VPULL-UP (V) R LOAD (kΩ) VOUT during POS (V)* 1 3.22 2.4 3.11 4.8 2.92 7.2 2.72 9.6 2.53 12 2.34 14.4 2.15 1 11.92 2.4 11.81 4.8 11.62 7.2 11.42 9.6 11.23 12 11.04 14.4 10.85 1 23.92 2.4 23.81 4.8 23.62 7.2 23.42 9.6 23.23 12 23.04 14.4 22.85 CC ≥ VCC(min) and t < tPO 3.3 VCC(min) tPO Output State Undefined for VCC < VCC(min) POS Low High Output State Undefined for VCC < VCC(min) Low High POS VCC(UV)DIS VCC(UV)EN Power-Off UVLO Enabled UVLO Enabled External Supply Glitch POS POS

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com Functional Safety The APS11000 and APS11060 were designed in accordance with the international standard for automotive functional safety, ISO 26262:2011. These products achieve an ASIL (Automotive Safety Integrity Level) rating of ASIL A according to the standard. The APS11000 and APS11060 are both classified as a SEooC (Safety Element out of Context) and can be easily integrated into safety-critical systems requiring higher ASIL ratings that incorporate external diagnostics or use measures such as redundancy. Safety docu- mentation will be provided to support and guide the integration process. For further information, contact your local FAE for A 2-SIL™ documentation: www.allegromicro.com/ASIL. Operation The APS11000 and APS11060 are integrated Hall-effect sensor ICs with an open-drain output. Table 1 offers a guide for select- ing the output polarity configuration, further explained in the configuration sections below. The open-drain output is an NMOS transistor that actuates in response to a magnetic field. The direc- tion of the applied magnetic field is perpendicular to the branded face for the APS11000, and parallel with the branded face for the APS11060; see Figure 5 for an illustration. The devices are offered in two packages: the UA package, a 3-pin through-hole mounting configuration, or in the LH package, a 3-pin surface- mount configuration. See the Selection Guide for a complete list of available options. Configurations xSL and xSH. The unipolar output of these devices is actuated when a south-polarity magnetic field perpen- dicular to the Hall element exceeds the operate point threshold, B OPS. When BOPS is exceeded, the xSL output turns on (goes low). The xSH is complementary, in that for this device the output turns off (goes high) when B OPS is exceeded. When the magnetic field is removed or reduced below the release point, BRPS, the device outputs return to their original state—off for the xSL and on for the xSH. See Figure 3 for unipolar south switching behav- ior. Configurations xNL and xNH. The unipolar output of these devices is actuated when a north-polarity magnetic field perpen- dicular to the Hall element exceeds the operate point threshold, B OPN. When BOPN is exceeded, the xNL output turns on (goes low). The xNH is complementary, in that for this device the output turns off (goes high) when B OPN is exceeded. When the magnetic field is removed or reduced below the release point, BRPN, the device outputs return to their original state—off for the xNL and on for the xNH. See Figure 3 for unipolar north switching behavior. Table 1: Switch Polarity Configuration Options Part Number Suffix Operating Mode Output State for B > BOP Output State for B = 0 G Power-On State, t < tPO xSL Unipolar South Low High High xSH Unipolar South High Low High xNL Unipolar North Low High High xNH Unipolar North High Low High xPL Omnipolar Low High High xPH Omnipolar High Low High Configurations xPL and xPH. The omnipolar operation of these devices allows actuation with either a north or a south polarity field. The xPL operates using the standard output polarity conven- tion. Fields exceeding the operating points, B OPS or BOPN, will turn the output on (low). When the magnetic field is removed or reduced below the release point, B RPN or BRPS, the device output turns off (goes high). The xPH is complementary, in that for the device, a north or south polarity field exceeding the operate points, B OPS or BOPN, will turn the output off (high). Removal of the field, or reduction below the release point threshold, BRPS or BRPN, will turn the output on (low). See Figure 3 for omnipolar switching behavior. After turn-on, the output transistor is capable of sinking current up to the short circuit current limit, I OM, which is a minimum of 15 mA. The difference in the magnetic operate and release points is the hysteresis, B HYS, of the device. This built-in hysteresis allows clean switching of the output even in the presence of exter- nal mechanical vibration and electrical noise. Figure 5: Magnetic Sensing Orientations APS11000 LH (Panel A), APS11000 UA (Panel B), APS11060 LH (Panel C), and APS11060 UA (Panel D)

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com

Applications

It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall element) between the supply and ground of the device to guarantee correct performance under harsh environmental conditions and to reduce noise from internal circuitry. As is shown in Figure 6: Typical and Enhanced Protection Application Circuits, a 0.1 µF capacitor is required. In applications where the APS11000 or APS11060 receives its power from an unregulated source such as a car battery, or where greater immunity is required, additional measures may be employed. Specifications for such transients will vary, so protection circuit design should be optimized for each application. For example, the circuit shown in Figure 6 includes an optional series resistor and output capacitor which improves performance during Powered ESD testing (ISO 10605) and Bulk Current Injection testing (ISO 11452-4). Figure 6: Typical and Enhanced Protection Application Circuits Recommended RPULL-UP ≤ 20 kΩ. See Power-On Behavior section. VSUPPLY VOUT CBYP 0.1 µF RPULL-UP 4.8 kΩ COUT 4.7 nF RS 100 Ω VPULL-UP APS110xx VCC VOUT GND VSUPPLY VOUT CBYP 0.1 µF RPULL-UP 4.8 kΩ APS110xx VCC VOUT GND Typical Applications Circuit Enhanced Protection Circuit Extensive applications information for Hall-effect devices is available in:

• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’ s Products – SMD and Through- Hole, AN26009 All are provided on the Allegro website: www.allegromicro.com Vertical Hall-Effect Sensor Linear Tools System design and magnetic sensor evaluation often require an in-depth look at the overall strength and profile gener- ated by a magnetic field input. To aid in this evaluation, Allegro MicroSystems, LLC provides a high-accuracy linear output tool capable of reporting the nonperpendicular magnetic field by means of an vertical Hall-effect sensor IC equipped with a calibrated analog output. For further information, contact your local Allegro field applications engineer or sales representative.

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com Amp Clock/Logic Hall Element Sample and Hold Low-Pass Filter Regulator A limiting factor for switchpoint accuracy when using Hall-effect technology is the small signal voltage developed across the Hall plate. This voltage is proportionally small relative to the offset that can be produced at the output of the Hall sensor. This makes it difficult to process the signal and maintain an accurate, reliable output over the specified temperature and voltage range. Chopper stabilization is a proven approach used to minimize Hall offset. The technique, dynamic quadrature offset cancellation, removes key sources of the output drift induced by temperature and pack- age stress. This offset reduction technique is based on a signal modulation-demodulation process. Figure 7: Model of Chopper Stabilization Circuit (Dynamic Offset Cancellation) illustrates how it is implemented. The undesired offset signal is separated from the magnetically induced signal in the frequency domain through modulation. The subsequent demodulation acts as a modulation process for the offset causing the magnetically induced signal to recover its original spectrum at baseband while the DC offset becomes a high-frequency signal. Then, using a low-pass filter, the signal passes while the modulated DC offset is suppressed. Allegro’s innovative chopper-stabilization technique uses a high-frequency clock. The high-frequency operation allows a greater sampling rate that produces higher accuracy, reduced jitter, and faster signal processing. Additionally, filtering is more effective and results in a lower noise analog signal at the sensor output. Devices such as the APS11000 and APS11060 that use this approach have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. This technique is made possible through the use of a BiCMOS process which allows the use of low offset and low noise amplifiers in combination with high-density logic and sample-and-hold circuits. Figure 7: Model of Chopper Stabilization Circuit (Dynamic Offset Cancellation) CHOPPER STABILIZATION

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com The device must be operated below the maximum junction tem- perature, TJ(max). Reliable operation may require derating supplied power and/or improving the heat dissipation properties of the application. Thermal Resistance, RθJA (junction to ambient), is a figure of merit summarizing the ability of the application and the device to dissipate heat from the junction (die), through all paths to ambient air. RθJA is dominated by the Effective Thermal Conductivity, K, of the printed circuit board which includes adjacent devices and board layout. Thermal resistance from the die junction to case, RθJC, is a relatively small component of RθJA. Ambient air temperature, TA, and air motion are significant external factors in determining a reliable thermal operating point. The following three equations can be used to determine operation points for given power and thermal conditions: PD = VIN × IIN (1) ΔT = PD × RθJA (2) TJ = TA + ΔT (3) Determining Junction Temperature For example, given common conditions: TA = 25°C, VCC = 12 V , ICC = 2.5 mA, VOUT(SAT) = 100 mV , IOUT = 5 mA, and RθJA = 165°C/W, then: PD = (VCC × ICC) + (VOUT × IOUT) = 30 mW + 0.5 mW = 30.5 mW ΔT = PD × RθJA = 30.5 mW × 165°C/W = 5°C TJ = TA + ΔT = 25°C + 5°C = 30°C Determining Maximum VCC For a given ambient temperature (TA), the maximum allowable power dissipation as a function of VCC can be calculated. PD(max), represents the maximum allowable power level without exceeding TJ(max), at a selected RθJA and TA. Example: VCC estimation using the conditions RθJA = 228°C/W, TA(max) = 150°C, TJ(max) = 165°C, VCC(max) = 24 V , ICC(max) = 5 mA, VOUT = 500 mV , and IOUT = 20 mA (output on), calculate the maximum allowable power level, PD(max), first using equa- tion 3: ΔT(max) = TJ(max) – TA = 165°C – 150°C = 15°C This provides the allowable increase to TJ resulting from internal power dissipation. Then, using equation 2 first for the output as shown below: PD(VOUT) = VOUT × IOUT = 500 mV × 20 mA = 10 mW Then, for the VCC supply: PD(VCC) = VCC × ICC = 24 V × 5 mA = 120 mW Combine the power dissipated by the device pins: PD(total) = (PD(VOUT) + PD(VCC)) PD(total) = (10 mW + 120 mW) = 130 mW Next, solve for the maximum allowable VCC for the given condi- tions using equation 1: VCC(est) = PD(total) ÷ (ICC + IOUT) 130 mW ÷ (5 mA + 20 mA) VCC(est) =130 mW ÷ 25 mA = 5.2 V The result indicates that, at TA, the application and device can dis- sipate adequate amounts of heat at voltages ≤ VCC(est). If the application requires VCC > VCC(est) then RθJA must by improved. This can be accomplished by adjusting the layout, PCB materials, or by controlling the ambient temperature. Determining Maximum TA In cases where the VCC(max) level is known, and the system designer would like to determine the maximum allowable ambient temperature, T A(max), the calculations can be reversed. For example, in a worst-case scenario with conditions VCC(max) =

24 V , ICC(max) = 5 mA, VOUT = 500 mV , IOUT(max) = 15 mA, and

RθJA = 228°C/W, for the LH package using equation 1, the largest possible amount of dissipated power is: PD = VIN × IIN PD = PD(VOUT) + PD(VCC) = 500 mV × 15 mA + 24 V × 5 mA PD = 7.5 mW + 120 mW = 127.5 mW Then, by rearranging equation 3: TA(max) = TJ(max) – ΔT TA(max) = 165°C – (127.5 mW × 228°C/W) Finally, note that the TA(max) rating of the device is 150°C and performance is not guaranteed above this temperature for any power level. POWER DERATING

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com APS11000

0.55 REF

0.25 BSC

0.95 BSC

0.95 1.00 0.70 2.40 A Active Area Depth, 0.28 mm REF B C B Reference land pattern layout All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances Branding scale and appearance at supplier discretion A PCB Layout Reference View Branded Face C Standard Branding Reference View AAH 2.90 +0.10 –0.20 4°±4° 8X 10° REF 0.180+0.020 –0.053 0.05 +0.10 –0.05

0.25 MIN

1.91 +0.19 –0.06 2.98 +0.12 –0.08 1.00 ±0.13 0.40 ±0.10 For Reference Only; not for tooling use (reference DWG-2840) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown D Hall element, not to scale D D D1.49 0.96

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 0.95 1.00 0.70 2.40 A Active Area Depth, 1.32 mm B C B Reference land pattern layout All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances Branding scale and appearance at supplier discretion A PCB Layout Reference View Branded Face C Standard Branding Reference View A44 2.90 +0.10 –0.20 4°±4° 8X 10° REF 0.180+0.020 –0.053 0.05 +0.10 –0.05 1.91 +0.19 –0.06 2.98 +0.12 –0.08 1.00 ±0.13 0.40 ±0.10 For Reference Only; not for tooling use (reference DWG-2840) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown D Hall element, not to scale D D0.96 APS11060

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com Package UA, 3-Pin SIP APS11000 2 31

1.27 NOM

1.02 MAX 45° 45° C 1.52 ±0.05 B Gate and tie bar burr area A B C Dambar removal protrusion (6X) A D E E E 1.44 2.04 E Active Area Depth, 0.50 mm REF Branding scale and appearance at supplier discretion Hall element (not to scale) For Reference Only; not for tooling use (reference DWG-9065) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown Mold Ejector Pin Indent D Standard Branding Reference View AAH 0.41 +0.03 –0.06 0.43 +0.05 –0.07 14.99 ±0.25 4.09 +0.08 –0.05 3.02 +0.08 –0.05

0.79 REF

10° Branded Face

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com Package UA, 3-Pin SIP APS11060 2 31 1.02 MAX 45° 45° 1.52 ±0.05 B Gate and tie bar burr area A B C Dambar removal protrusion (6X) A D E C E 2.04 E Active Area Depth, 1.27 mm Branding scale and appearance at supplier discretion Hall element (not to scale) For Reference Only; not for tooling use (reference DWG-9065) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown Mold Ejector Pin Indent D Standard Branding Reference View A44 0.41 +0.03 –0.06 0.43 +0.05 –0.07 14.99 ±0.25 4.09 +0.08 –0.05 3.02 +0.08 –0.05 10° Branded Face

Vertical and Planar Hall-Effect SwitchesAPS11000 and APS11060 Allegro MicroSystems, LLC Manchester, NH 03103-3353 U.S.A. www.allegromicro.com For the latest version of this document, visit our website: www.allegromicro.com Copyright ©2018, Allegro MicroSystems, LLC Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro’s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copies of this document are considered uncontrolled documents.

Revision History

– March 15, 2018 Initial release 1 July 16, 2018 Added APS11000 part option; updated Magnetic Characteristics tables; other minor editorial updates

2 October 22, 2018

Updated TJ(max) to 165°C, Selection Guide (page 3), Absolute Maximum Ratings footnotes (page 4), Power- On State (page 6), Magnetic Characteristics table (page 8), Package Thermal Characteristics (page 9), Magnetic Characteristic Performance chart labels (page 11), and Power Derating section (page 16).