AN8771NFH PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
1Publication date: February 2002 SDD00018CEB AN8771NFH Pre-amplifier IC for MD I Overview The AN8771NFH is an MD pre-amplifier IC of wide range of supply voltage (V CC = 2.7 V to 5.5 V). This IC can form an MD system using 3-beam pick-up in combi- nation with the MN66614 digital signal processing LSI. I Features
- Applicable for 3-beam pick-up
- RF signal processing
- Error signal generating function for servo
- Various status detection function
- Laser power control circuit I Applications
- MD Unit: mm QFP064-P-1010 10.00±0.20 48 33 161 12.00±0.20 10.00±0.20 0.10±0.10 (1.25) (1.25) 0.50 0.18 +0.1 –0.05 0.15 +0.10 –0.05 Seating plane (1.00) 0.50±0.20 0° to 10° Note) The package of this product will be changed to lead-free type (QFP064-P-1010A). See the new package dimensions section later of this datasheet.
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59 GND4
51 RF amp. IV IV IV IV IV IV IV IV IV IV IV IV GND2 VCC2 GND3 FBAL /FOF set VCA TRCRS VCA VCABPF ASOF set NRF det. VCA Mode controlDSLEQ AGC 3TENV OFT amp. TBAL /TOFSET ASBDO RFBDO OFTR Pin 20Pin 21 VREF Pin 18 VREF VREF VREF VREF VREFMirror circuit I Pin Descriptions Pin No. Symbol Description
1 REFO APC reference voltage buffer
2 GND3 APC circuit GND pin
3 APCREF APC reference voltage input pin
4 TEMPIN + Temperature sensor amp. + input pin 5 TEMPIN − Temperature sensor amp. − input pin 6 TEMP Temperature sensor amp. output pin
7 TOFS Tracking offset adjustment pin
8 TBAL Tracking balance adjustment pin
Pin No. Symbol Description
9 TE Tracking error signal output pin
10 N.C.
11 CCRS Capacitor connection pin for
12 TRCRS Track cross output pin
13 FBAL Focus balance adjustment pin
14 FE Focus error signal output pin
15 TGAIN TE amp. gain adjustment pin
16 FOFS Focus offset adjustment pin
Pin No. Symbol Description
38 PEFMS Data slice output pin
39 GND2 Data slice circuit GND pin
40 PEFM Data slice level setting pin
41 EFMIND Data slice signal input pin
42 EFMINS EFM detection input pin
43 OUTRF EFM output pin
44 CRFAGC RFAGC capacitor connection pin
45 EQADJ EQ setting pin
46 EQIN EQ input pin
47 ARFO RF amp. output pin
48 SVREF Reference signal input pin
49 VREF Reference signal output pin
50 RF1 RF1 signal input pin
51 RF2 RF2 signal input pin
52 SWMS Pit RF amp. polarity setting pin
53 B Main beam B signal input pin
54 A Main beam A signal input pin
55 D Main beam D signal input pin
56 C Main beam C signal input pin
57 F Side beam F signal input pin
58 E Side beam E signal input pin
59 V CC3 APC circuit VCC pin
60 LDON LD amp. on/off control signal input pin 61 LDO LD amp. output pin
62 APCPD + Photo diode light quantity
63 APCPD − PD polarity reversing current input pin
64 REFIN APC amp. reference voltage input pin Pin No. Symbol Description
17 AS Main beam light quantity sum
18 ASOFS AS offset adjustment pin
19 ASGAIN Amp. gain adjustment pin for main beam system
20 MON3T 3T envelope detection output pin
21 CEA Capacitor connection pin for 3T
22 GND4 GND for FE/TE system
23 BDO AS drop-out detection signal
24 CBDOG BDO detection capacitor
25 OFTR Off-track signal output pin
26 CBDOP RFBDO detection capacitor
27 OFTIN Off-track detection signal input pin
28 OFTO Off-track detection signal output pin
29 ADIP ADIP FM signal output pin
30 GND1 GND pin
31 NRFDET RF detection signal output pin
32 V CC1 VCC pin
33 RFSWHL Reflection factor changeover
34 RFSWPG Pit/group changeover signal
35 NREC Recording/playback change over
36 NRFSTBY Standby control signal input pin
37 V CC2 Data slice circuit VCC pin
I Pin Descriptions (continued)
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I Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage V CC 6.0 V Supply current I CC 35 mA Power dissipation * PD 210 mW Operating ambient temperature * Topr −30 to +85 °C Storage temperature * Tstg −55 to +125 °C Note) 1. Except for the operating ambient temperature and storage temperature, all ratings are for T a = 25°C. 2. *:V CC1 , VCC2 , VCC3 are of same voltage. I Recommended Operating Range Parameter Symbol Range Unit Supply voltage V CC1 2.7 to 5.5 V VCC2 VCC3 Parameter Symbol Conditions Min Typ Max Unit No load current consumption 1 I TOTAL1 Normal mode 19.6 24.5 29.4 mA No load current consumption 2 I TOTAL2 Power saving mode 1.0 1.7 2.5 mA (Power saving mode) VREF offset ∆VOVB V48 = V32 / 2 −70 7m V VREF output impedance Z VB I49 = ±3 mA 5 Ω LD amp. off operation V LDOFF LD amp. off mode 0.4 V LD amp. gain G LD V62: 1 kHz sine wave (50 mV[p-p], 18 20 22 dB DC offset voltage = VREF − 25 mV) FE offset + adjustment ∆VOFO+ V16 = VREF − 0.5 V 100 mV V19 = VREF − 0.5 V FE offset − adjustment ∆VOFO− V16 = VREF + 0.5 V − 100 mV V19 = VREF − 0.5 V FE gain 1 G FEA1 V54: 5 kHz sine wave (40 mV[p-p], 20 23 26 dB DC offset voltage = VREF − 25 mV) V19 = VREF − 0.5 V FE relative gain 2 G FEA2 V54: 5 kHz sine wave (300 mV[p-p], − 18 dB DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V FE frequency characteristics A ∆GFEACA V54: 50 kHz sine wave (300 mV[p-p], −6 −30d B DC offset voltage = VREF − 160 mV) V19 = VREF − 0.5 V FBAL adjustment range 12 ∆GFB12 V13 = VREF ± 0.5 V − 12 −9.6 dB V19 = VREF + 0.5 V I Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit FBAL adjustment range 34 ∆GFB34 V13 = VREF ± 0.5 V 9.6 12 dB V19 = VREF + 0.5 V TE offset + adjustment ∆VOTO+ V7 = VREF − 0.5 V 100 mV V15 = VREF − 0.5 V Pit mode TE offset − adjustment ∆VOTO− V7 = VREF + 0.5 V − 100 mV V15 = VREF − 0.5 V Pit mode TE gain 1 G TEE1 V58: 5 kHz sine wave (4 mV[p-p], 37.5 42.5 47.5 dB DC offset voltage = VREF − 3 mV) V15 = VREF − 0.5 V, Pit mode TE relative gain 2 G TEE2 V58: 5 kHz sine wave (40 mV[p-p], − 18 dB DC offset voltage = VREF − 25 mV) V15 = VREF + 0.5 V, Pit mode TE frequency characteristics E ∆GTEACE V58: 100 kHz sine wave (40 mV[p-p], −6 −30d B DC offset voltage = VREF − 25 mV) V15 = VREF + 0.5 V, Pit mode TBAL adjustment range 12 ∆GTB12 V8 = VREF ± 0.5 V − 3 −2.3 dB V15 = VREF + 0.5 V, Pit mode TBAL adjustment range 34 ∆GTB34 V8 = VREF ± 0.5 V 2.3 3 dB V15 = VREF + 0.5 V, Pit mode AS offset + adjustment ∆VOASO+ V18 = VREF − 0.5 V 100 mV V19 = VREF − 0.5 V AS offset − adjustment ∆VOASO− V18 = VREF + 0.5 V − 100 mV V19 = VREF − 0.5 V AS gain 1 G AS1 V54: 5 kHz sine wave (50 mV[p-p], 10.6 13.6 15.6 dB DC offset voltage = VREF − 30 mV) V19 = VREF − 0.5 V AS relative gain 2 G AS2 V54: 5 kHz sine wave (300 mV[p-p], − 18 dB DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V AS OFTO amp. relative gain ∆GASOF V54: 5 kHz sine wave (300 mV[p-p], 5.8 6.8 7.8 dB DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V, Group mode AS frequency characteristics ∆GASAC V54: 50 kHz sine wave (300 mV[p-p], −6 −30d B DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V ADIP gain 1 G AD1 V54: 21.6 kHz sine wave (12 mV[p-p], 31 37 40 dB DC offset voltage = VREF − 7 mV) V19 = VREF − 0.5 V ADIP relative gain 2 G ADVCA2 V54: 21.6 kHz sine wave (150 mV[p-p], − 18 dB DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V I Electrical Characteristics at Ta = 25°C (continued)
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Parameter Symbol Conditions Min Typ Max Unit ADIP frequency characteristics 1 ∆GADf1 V54: 18 kHz sine wave (150 mV[p-p], − 30d B DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V ADIP frequency characteristics 2 ∆GADf2 V54: 26 kHz sine wave (150 mV[p-p], − 30d B DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V RF amp. gain in group mode G RFG V54: 100 kHz sine wave (18 mV[p-p])18.8 20.8 22.8 dB (playback) Group mode RF amp. gain in low reflection factor G RFPL V54: 100 kHz sine wave (120 mV[p-p])1.5 3.5 5.5 dB (playback) Pit low reflection factor mode RF amp. gain in high reflection factor G RFPH V54: 100 kHz sine wave (300 mV[p-p]) −8 −6 −4d B (playback) Pit high reflection factor mode RF amp. frequency characteristics ∆GRFG V54: 4 MHz sine wave (18 mV[p-p]) −3 dB in group mode Group mode (playback) RF amp. frequency characteristics ∆GRFPL V54: 4 MHz sine wave (120 mV[p-p]) −3 dB in low reflection factor Pit low reflection factor mode (playback) RF amp. frequency characteristics ∆GRFPH V54: 4 MHz sine wave (300 mV[p-p]) −3 dB in high reflection factor Pit high reflection factor mode (playback) EQ gain adjustment 1 ∆GEQ1 V54: 200 Hz, 720 kHz sine wave 1.5 3.0 dB (100 mV[p-p]) V45 = GND, V44 = VREF − 0.2 V EQ gain adjustment 2 ∆GEQ2 V54: 200 Hz, 720 kHz sine wave 3.5 5.0 dB (100 mV[p-p]) V45 = 400 mV, V44 = VREF − 0.2 V AGC operation V OMRFV V46: 500 kHz sine wave (200 mV[p-p])420 520 620 mV DSL pulse output duty T DSL V41: 720 kHz sine wave (500 mV[p-p]) 47 50 53 % NRF detection operation V RFD V46: 500 kHz sine wave (Amplitude sweep)58 83 108 mV NRF detection high-level voltage V RFDH V46: 500 kHz sine wave (Amplitude sweep)2.1 3.0 V NRF detection low-level voltage V RFDL V46 : 500 kHz sine wave (Amplitude sweep)0 0.4 V TRCRS detection voltage 1 V H1TCR V7: Sweep + 0 to max. +150 mV 63 90 120 mV in DC refering to V6 as reference TRCRS detection voltage 2 V H2TCR V7: Sweep + 0 to max. −150 mV −120 −90 −63 mV in DC refering to V6 as reference TRCRS high-level voltage V TCRH V7 = V6 + 100 mV 2.1 3.0 V TRCRS low-level voltage V TCRL V7 = V6 − 100 mV 0 0.4 V ASBDO detection current 1 I CBDO1 Apply to the pin 24 DC voltage which 0.7 1.0 1.5 µA is 200 mV higher than that at open ASBDO detection current 2 I CBDO2 Apply to the pin 24 DC voltage which 17 26 39 µA is 1.1 V higher than that at open I Electrical Characteristics at Ta = 25°C (continued)
I Electrical Characteristics at Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit BDO high-level voltage V BDOH V17 < VREF + 50 mV 2.1 3.0 V BDO low-level voltage V BDOL V54: Apply voltage so as to get 0 0.4 V V17 = VREF + 200 mV RFBDO detection current 1 I CRFBDO1 V26: Apply voltage 100 mV higher 0.33 0.50 0.75 µA than that of at open RFBDO detection current 2 I CRFBDO2 V26 = VREF + 0.3 V 6.7 10 15 µA RFBDO detection operation t RFB V46: 500 kHz sine wave 15 30 60 µs (200 mV[p-p] → 0 mV[p-p]) V26: Fix to DC voltage at which 200 mV[p-p] is inputted to V46 3T component envelope G 3TMON V41: 720 kHz AM sine wave modulation15.5 18.5 21.5 dB extracting gain (500 mV[p-p]) AM sine wave: 5.3 kHz 20% OFTO G EFMOF V41: 720 kHz AM sine wave modulation−6 −30d B EFM detection gain (500 mV[p-p]) AM modulation: 5.3 kHz 20% EFM detection output mode OFTIN detection level ∆VOFTI V27: Sweep VREF − 100 mV to 35 50 65 mV VREF + 100 mV in DC OFTR high-level voltage V OFTH V27 = VREF − 100 mV 2.1 3.0 V OFTR low-level voltage V OFTL V27 = VREF + 100 mV 0 0.4 V TEMP amp. gain G TM V5 = VREF ± 0.5 V −20 2d B REFO gain G REFO V3: 20 kHz sine wave (0.5 V[p-p]) −20 2d B I Technical Data 1. Operation mode set by mode setting <RF amp. gain> <IV amp.> <OFTO output signal> Setting pin NREC RFSWPG RFSWHLOperation mode Pit high reflection factor mode Pit mode High-level High-level High-level Pit low reflection factor mode MO pit playback mode High-level High-level Low-level Group mode MO group playback mode High-level Low -level Low-level Operation off mode MO recording mode Low -level Setting pin RFSWPGOperation mode EFM detection output mode High-level AS output mode Low-level
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Setting pin RFSWPGOperation mode Pit mode High-level Group mode Low-level <LD amp. operation> Setting pin LDONOperation mode Operation on mode High-level Operation off mode Low-level <Total operation> Setting pin NRECOperation mode Normal mode High-level Power saving mode Low-level I Technical Data (continued) 1. Operation mode set by mode setting (continued) <TE polarity changeover> Setting Pin name Lower limit Upper limit Condition RFSWHL RFSWPG V CC1 − 0.5 V V CC1 SVREF = VCC1 / 2 High-level NREC NRFSTBY LDON V CC3 − 0.5 V V CC3 RFSWHL RFSWPG SVREF = VCC1 / 2 Low-level NREC 0 V 0.5 V NRFSTBY LDON 2. Voltage to be applied to setting pin 3. For SWMS (pin 52) setting In the pit high reflection factor mode and low reflection factor mode, the polarity of ARFO (pin 47) through RF1 (pin 50)·RF2 (pin 51) is shown below by setting of SWMS: SWMS Polarity High-level Reverse Low-level Normal
I Technical Data (continued) 4. Internal circuit of APCPD − (pin 63) A current mirror circuit of which primary side is APCPD− is built-in. In case where output of secondary side is connected to APCPD + and PD current for laser monitor is sunk to PD, the direction of current can be reversed by connecting the PD output to APCPD− . Mirror ratio is 1 to 1 as the hFE = ∞ When using no current mirror, connect APCPD− to VCC3 .
61 LDO
APCPD− APCPD+ I Application Circuit Example V CC1 VCC3 VREF PD PD PD PD PD PD PD PD PD V CC2 PWM signal VREF VREF Survo-LSI Temperature sensorLaser drive reference voltage Laser diode Optical pick-up Head amp. Microcomputer
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I New Package Dimensions (Unit: mm)
- QFP064-P-1010A (Lead-free package) 12.00±0.20 (1.00) 0.18±0.05 0.50±0.20 0° to 10° (1.25) 12.00±0.20 10.00±0.20 (1.25) 10.00±0.20 48 33 11 6 1764 1.95±0.200.10±0.10 0.15 ±0.05 Seating plane M0.10 0.50 0.10
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