AN7522N

AN7522N PANASONIC

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Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. A-1 Absolute Maximum RatingsA No. Item Storage Temperature Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Supply V oltage Supply Current Power Dissipation Symbol Tstg Topr Popr Gopr Sopr Vcc Icc PD Ratings -55 ~ +150 -25 ~ +70 14.4 2.0 1.92 Unit ° C ° C V A W Note Ta=70°C 25-APR-2000 1.013x105±0.61x105 (1.0±0.6) Pa (atm) 9,810 (1000) m/s2 (G) 4,900 (500) m/s2 (G) Structure Appearance Application Function Silicon Monolithic Bipolar IC SIL-12 Pin Plastic Package (Power Type with Fin) Low Frequency Amplifier BTL 5.0W x 2ch Power Amplifier with Standby Function and V olume Function Operating Supply V oltage Range Vcc 3.5V ~ 13.5V The temperature of all items shall be Ta=25°C except storage temperature and operating ambient temperature. At no signal input. Note 1) 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. B-1 Electrical CharacteristicsB No Item Quiescent Circuit Current Symbol Test Cir- cuit Conditions Vin=0V , V ol=0V Note Total Harmonic Distortion Unitmaxtypmin Limits (Unless otherwise specified, the ambient temperature is 25°C±2°C, Vcc=8.0V , frequency=1kHz and RL=8Ω.) ICQ THD V oltage Gain Po=0.5W, V ol=1.25V Rg=10kΩ, V ol=0VOutput Noise V oltage Maximum Power Output 1 Ripple Rejection Ratio Standby Current Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT). V olume Attenuation Ratio Channel Balance 1 Channel Balance 2 Middle V oltage Gain Channel Crosstalk ISTB VNO GV RR PO1 V off Att CB1 CB2 GVm CT Vin=0V , V ol=0V Po=0.5W, V ol=1.25V THD=10%, V ol=1.25V Rg=10kΩ, V ol=0V Vr=0.5Vrms, fr=120Hz Rg=10kΩ, V ol=0V Po=0.5W, V ol=0V Po=0.5W, V ol=1.25V Po=0.5W, V ol=0.6V Po=0.5W, V ol=0.6V Po=0.5W, V ol=1.25V 2.4 4.0 -250 20.5 0.10 0.10 3.0 5.0 23.5 100 0.4 0.5 250 26.5 mA µA mVrms dB W W dB mV dB dB dB dB dB 25-APR-2000 Maximum Power Output 2 PO2 Vcc=11V THD=10%, V ol=1.25V 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. B-2 Electrical CharacteristicsB No Item Standby pin current Symbol Test Cir- cuit Conditions Vin=0V , V ol=0V NoteUnitmaxtypmin Limits (Unless otherwise specified, the ambient temperature is 25°C±2°C, Vcc=8.0V , frequency=1kHz and RL=8Ω.) ISTB2 Note) IVOL Vin=0V , VSTB=3V - -12 µA µA kΩ (Reference Data for Design) V olume pin current The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed. 25-APR-2000 Input Impedance Zi Vin=±0.3VDC 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. C-1 (Description of test circuit and test method) Test Circuit 1 Note) If the standby pin is open or 0V , the IC is on standby state. The IC is in the state of volume minimum if the V olume pin is ground. The IC is in the state of volume maximum if the V olume pin is open. 1 2 87 AN7522N 10µ OUT1 9 10 Vin2 1.0µ 10k 1.25VVcc 470µ+ + 68k 270k Vin1 1.0µ 10k OUT2 Stand-by 0V V olume 1211653 4 25-APR-2000 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. D-1 Circuit Function Block Diagram Pin Descriptions Vcc Ch.1 Output (+) GND (Ch.1 Output) Ch.1 Output (-) Standby Ch.1 Input Pin No. Description GND (Input) Ch.2 Input V olume Ch.2 Output (-) GND (Ch.2 Output) Ch.2 Output (+) Pin No. Description 1 2 3 4 8765 Vcc 9 10 11 12 + _ +_ +_+ _ Input GND Output GND Output GND 25-APR-2000 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. E Package Name Unit : mm FP-12S 29.96 ± 0.3 28.0 ± 0.3 20.0±0.10.6 0.6 ± 0.12.54 3.5 ± 0.3 0.25+0.1 -0.05 1.2 ± 0.1 R1.8 1 12 Company insignia Date Code Name of item 29.6 ± 0.3 25-APR-2000 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date Ref No. Total Page Page No. F-1 (Structure Description) Package FP-12S AN7522N 651 Chip surface passivation Lead frame material Inner lead surface process Outer lead surface process Chip mounting method Wire bonding method Wire material, Diameter Mold material Molding method Fin material SiN, Fe group, Ag plating, Solder plating, Ag paste, Thermalsonic bonding, Au, Epoxy, Transfer mold, Cu Group Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) Others ( ) 2 ,6 PSG, Cu group, Au plating, Solder dip, Au-Si alloy, Solder, Diameter 38 µm Multiplunger mold, 25-APR-2000 21-JUL-2000

Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. G Ambient Temperature, Ta (°C) Power Dissipation, PD (W) 0 25 50 75 100 125 1500 PD - Ta (Technical Data) Rth(j-c) = 2°C/W Rth(j-a) = 41.7°C/W( ) 25-APR-2000 21-JUL-2000 Single Package Without heat sink Rthj-a=41.7°C/W 20°C/W heat sink 10°C/W heat sink 5°C/W heat sink

(Precautions for use) 1) Make sure that the IC is free of any pin short-circuiting, ground short, and load short- circuiting. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150°C. The thermal protection circuit is reset automatically when the temperature drops. 4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high or the IC operates high output power. 5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the previous stage. 6) The electric surge voltage for this IC low, therefore be extra careful when using the following pin (at 200pF): Pin 5=+140V, Pin 6=+140V, Pin 9=+130V, Pin 8=+150V Product Specifications Matsushita Electronics CorporationFMSC-PSDA-002-01 Prepared Checked Approved Eff. Date Eff. Date Eff. Date Eff. Date AN7522N Ref No. Total Page Page No. G (Technical Data) 25-APR-2000 21-JUL-2000