AN44066A-VF

AN44066A-VF PANASONIC

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Receipt Date: / / Issuance Date: / / Panasonic Global Part Number Vendor Issue Number Orderer (Customer) Part Number "Changes in the description of Delivery Specifications" and "changes that affect performance, quality or environment" are implemented according to advance consultation. ORDERER (CUSTOMER)VENDOR Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein below). "Military Purpose" in this statement means the design, development, manufacture, storage or use of any weapons, including without limitation nuclear weapons, biological weapons, chemical weapons and missiles. DELIVERY SPECIFICATIONS Industrial Devices Company, Panasonic Corporation SMART Puniness distraction S423140-09#01 3.122012.

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. (3)The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: ・Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (5)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (6)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Reprint from WARNING LABEL STANDARDS SC3-11-00007 This delivery specifications may include old company names such as “Matsushita Electronics Corporation” o r “Semiconductor Company, Matsushita Electric Industrial Co., Ltd .“”Semiconductor Company, Panasonic Corporation ” Please interpret these old company names as Industrial Devices Company, Panasonic Corporation” as of January 1, 2012.

Regulations No.: Total Pages Page 137 AN44066APart No. Part No. Package Code No. Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by Semiconductor Company Matsushita Electric Industrial Co., Ltd. M.Hiramatsu Y.Kakizaki T.Iwami 214406600108040 2008-04-11 IC3F5211

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600208040 2008-04-11

Contents

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600308040 2008-04-11 AN44066A Driver IC for Stepping Motor „ Overview AN44066A is a two channels H-bridge driver IC. Bipolar stepping motor can be controlled by this single driver IC. 2-phase, half-step, 1-2 phase, W1-2 phase can be selected. „ Features y2-phase input control by rationalization of interface (2-phase excitation, half-step, and 1-2 phase excitation enabled) y4-phase input control (W1-2 phase excitation enabled) yBuilt-in CR chopping (with frequency selected) yBuilt-in standby function yBuilt-in thermal protection and low voltage detection circuit yBuilt-in 5 V power supply „ Applications yIC for stepping motor drives „ Package y32 pin Plastic Shrink Small Outline Package (SSOP Type) „ Type yBi-CDMOS IC

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600408040 2008-04-11 „ Application Circuit Example Note) y This application circuit is shown as an example but does not guarantee the design for mass production set. CHARGE PUMP VPUMP BC1 BC2 Gate Circuit PHB1 IN3 IN2 VREFB R S RCSB BOUT2 BOUT1 Gate CircuitPHA1 ENABLEA IN0 IN1 VREFA RCSA AOUT1 AOUT2 BLANK OSC TSD UVLO Reg VM1 VM2 VMS5VOUT GND TJMON PWMSW PWMSW 0.01 µF 0.01 µF 0.1 µF 47 µF 0.1 µF STBY IN0 IN2 S5VOUT R QQ S

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600508040 2008-04-11 Note) This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified. „ Block Diagram CHARGE PUMP Gate Circuit Gate Circuit BLANK OSC TSD UVLO Reg VM PWMSW IN0 IN2 S5VOUT R S Q R Q S BC1 BC2 PHB1 IN3 IN2 VREFB PHA1 ENABLEA IN0 IN1 VREFA S5VOUT TJMON PWMSW STBY VPUMP RCSB BOUT2 BOUT1 RCSA AOUT1 AOUT2 VM1 VM2 GND

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600608040 2008-04-11 Phase B output torque control 2InputIN330 Phase A/B start/stop signal inputInputENABLEA31 VBE monitorOutputTJMON32 Phase B output torque control 1InputIN229 PWM frequency selection inputInputPWMSW24 Signal groundGroundGND23 Standby settingInputSTBY22 Internal reference voltage (5 V output)OutputS5VOUT21 Phase B torque reference voltage inputInputVREFB20 Phase A torque reference voltage inputInputVREFA19 Charge Pump capacitor connection 1OutputBC118 Charge Pump capacitor connection 2OutputBC217 Phase A output torque control 2InputIN128 Phase A output torque control 1InputIN027 Phase B phase selection inputInputPHB1 26 Phase A phase selection inputInputPHA1 25 Charge Pump circuit outputOutputVPUMP16 Motor power supply 2Power supplyVM215 N.C.—N.C.14 Phase A motor drive output 1OutputAOUT113 N.C.—N.C.12 Phase A current detectionInput / OutputRCSA11 N.C.—N.C.10 Phase A motor drive output 2OutputAOUT29 N.C.—N.C.8 Phase B motor drive output 1OutputBOUT17 N.C.—N.C.6 Phase B current detectionInput / OutputRCSB5 N.C.—N.C.4 Phase B motor drive output 2OutputBOUT23 N.C.—N.C.2 Motor power supply 1Power supplyVM11 DescriptionTypePin namePin No. „ Pin Descriptions

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600708040 2008-04-11 *4A0.8IfFlywheel diode current (Pin 3, 7, 9, 13)7 *3°C–55 to +150TstgStorage temperature4 *4V37VOUTOutput pin voltage (Pin 3, 7, 9, 13)5 *4A±0.8IOUTMotor drive current (Pin 3, 7, 9, 13)6 NoteUnitRatingSymbolParameterA No. *3°C–20 to +70ToprOperating ambient temperature3 *2W0.427PDPower dissipation2 *1V37VMSupply voltage (Pin 1, 15)1 „ Absolute Maximum Ratings Note) Absolute maximum ratings are limit values which are not dest ructed, and are not the values to which operation is guaranteed. Notes) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *2 : The power dissipation shown is the value at T a = 70°C for the independent (unmounted) IC package without a heat sink. When using this IC, refer to the PD-Ta diagram of the package standard and design the heat radiation with sufficient margin so that the allowable value might not be exceeded based on the conditions of power supply voltage, load, and ambient temperature. *3 : Except for the power dissipation, operating ambient temp erature, and storage temperature, all ratings are for Ta = 25°C. *4 : Do not apply external currents or voltages to any pin not specifically mentioned. For the circuit currents, "+" denotes current flowing into the IC, and "ʵ" denotes current flowing out of the IC. *V10.0 to 34.0VMOperating supply voltage range NoteUnitRangeSymbolParameter Note) *: The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. „ Operating Supply Voltage Range

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600808040 2008-04-11 —V–0.3 to 6STBY22 —V–0.3 to 6PWMSW24 —V–0.3 to 6PHA125 —V–0.3 to 6PHB126 —V–0.3 to 6IN027 —V–0.3 to 6IN128 —V–0.3 to 6IN229 —V–0.3 to 6IN330 —V–0.3 to 6ENABLEA31 —V2.5RCSB5 —V2.5RCSA11 *1V(VM –1 )t o4 3VPUMP16 *1V(VM –1 ) t o4 3BC217 *1VVM + 0.3BC118 —V–0.3 to 6VREFA19 —V–0.3 to 6VREFB20 NoteUnitRatingPin namePin No. *2mA–5 to 0S5VOUT21 NoteUnitRatingPin namePin No. „ Allowed Voltage and Current Ranges Notes) y Rating Voltage is voltage of pin on GND y Do not apply current or voltage from outside to any pin not listed above. y For the circuit currents, "+" denotes current flowing into the IC, and "ʵ" denotes current flowing out of the IC. Notes) *1 : Do not apply external voltages to this pin. Set not to exceed allowable range at any time. *2 : This is the rating under the condition that VM is used in the range between 16 V and 34 V. When VM is used in the range between 10 V and 16 V, the rating is –1.4 mA to 0.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406600908040 2008-04-11 —mA8.25.4—ENABLEA = 3.3 V STBY = 0 V1IM Supply current (at when only control system and charge Pump circuit are ON) —µA15ʕ–15PWMSW = 0 V1I PWMSWLLow-level PWMSW input current22 —V5.5—2.1—1VSTBYHHigh-level STBY input voltage23 —V0.6—0—1VSTBYLLow-level STBY input voltage24 —µA4530—STBY = 5 V1ISTBYHHigh-level STBY input current25 —µA2ʕ–2STBY = 0 V1ISTBYLLow-level STBY input current26 —V5.5—2.2—2VPWMSWHHigh-level PWMSW input voltage19 —µA3316.58PWMSW = 3.3 V1IPWMSWHHigh-level PWMSW input current21 —V0.6—0—2VPWMSWLLow-level PWMSW input voltage20 —µA15ʕ–15ENABLEA = 0 V1IENABLEALLow-level ENABLEA input current18 I/O Block —µA2010—VM = 37 V, VRCS = 0 V1ILEAKOutput leakage current4 —µA10ʕ–10ENABLEA = 5 V1IENABLEAHHigh-level ENABLEA input current17 —V0.6—0—1VENABLEALLow-level ENABLEA input voltage16 —V5.5—2.2—1VENABLEAHHigh-level ENABLEA input voltage15 —µA15ʕ–15PHA1 = PHB1 = 0 V1IPHAL IPHBL Low-level PHA1/PHB1 input current14 —µA663316.5PHA1 = PHB1 = 3.3 V1IPHAH IPHBH High-level PHA1/PHB1 input current13 —V0.6—0—1VPHAL VPHBL Low-level PHA1/PHB1 input voltage12 —V5.5—2.2—1VPHAH VPHBH High-level PHA1/PHB1 input voltage11 —µA15ʕ–15IN0 = IN1 = IN2 = IN3 =

0 V1IINLLow-level IN input current10

IN0 = IN1 = IN2 = IN3 = 5 V IIN = 0.5 A —V1.51.00.5IIN = ±0.5 A4VDIFlywheel diode forward voltage3 —µA190120—STBY = 2.1 V1ISTBYSupply current (at standby mode)6 —V5.5—2.21VINHHigh-level IN input voltage7 —V0.6—0—1VINLLow-level IN input voltage8 Power Block —V—VM – 0.31 VM – 0.47IIN = –0.5 A3VOHHigh-level output saturation voltage1 —V0.710.47—3VOLLow-level output saturation voltage2 —µA10ʕ–101IINHHigh-level IN input current9 Limits Typ Unit Max Test circuits Note Min ConditionsSymbolParameterB No. „ Electrical Characteristics at VM = 24 V Note) T a = 25°C±2°C unless otherwise specified.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601008040 2008-04-11 Torque Control Block Reference Voltage Block —mV693660627 VREFA = VREFB = 3.3 V IN0 = IN1 = 0.6 V IN2 = IN3 = 0.6 V 1VT HComp threshold H (100%)31 —mV470440410 VREFA = VREFB = 3.3 V IN0 = 2.2 V, IN1 = 0.6 V IN2 = 2.2 V, IN3 = 0.6 V 1VT CComp threshold C (67%)32 —mV240220200 VREFA = VREFB = 3.3 V IN0 = 0.6 V, IN1 = 2.2 V IN2 = 0.6 V, IN3 = 2.2 V 1VT LComp threshold L (33%)33 —kHz352617PWMSW = 2.2 V2fPWM2PWM frequency229 —kHz705234PWMSW = 0.6 V2fPWM1PWM frequency128 —µA12510083.3VREFA = 5 V VREFB = 5 V1IREFA IREFB Input bias current27 —µs1.120.750.38VREFA = VREFB = 0 V2TBPulse blanking time30 —Ω2718—IS5VOUT = –1.5 mA, –3.5 mA1ZS5VOUTOutput impedance35 —V5.55.04.5IS5VOUT = 0 mA1VS5VOUTReference voltage34 Limits Typ Unit Max Test circuits Note Min ConditionsSymbolParameterB No. „ Electrical Characteristics (continued) at VM =2 4 V Note) T a = 25°C±2°C unless otherwise specified.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601108040 2008-04-11 —kΩ605040VREFA = 5 V VREFB = 5 V—ZVREFA ZVREFB Input impedance41 I/O Block *1µA—68—PHA1 = PHB1 = 5 V—IPHAH2 IPHBH2 High-level PHA1/PHB1 input current 243 VREF Block —%20—–20———Input impedance precision42 —ºC—40———∆TSDThermal protection hysteresis width40 PWMSW = 5 V Output voltage falling edge Thermal Protection Thermal protection operating temperature39 *1µA—42——IPWMSWH2High-level PWMSW input current 244 Output Drivers —V/µs—270—Output voltage rising edge—VTrOutput slew rate 136 —V/µs—330——VTfOutput slew rate 237 Reference values Typ Unit Max Test circuits Note Min ConditionsSymbolParameterB No. Note) *1 : Refer to the “Usage Notes” (P.35) for the input current characteristics about PHA1, PHB1, PWMSW. „ Electrical Characteristics (Reference values for design) at VM = 24 V Notes) Ta = 25°C±2°C unless otherwise specified. The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, we will respond in good faith to user concerns.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601208040 2008-04-11

17 BC2

18 BC1

32 TJMON

20 VREFB

26 PHB1

21 S5VOUT

22 STBY

27 IN0

28 IN1RCSB 5

N.C. 12 N.C. 2 VM1 1 N.C. 4 N.C. 8 RCSA 11 AOUT2 9 AOUT1 13 N.C. 14 VM2 15 VPUMP 16

23 GND

29 IN2

30 IN3

31 ENABLEA

25 PHA1

24 PWMSW

19 VREFA

N.C. 10 N.C. 6 A VSIN3IIN3 IIN2 IIN1 IIN0 IPHA1 IPHB1 VSIN2 VSIN1 VSIN0 VSPHB1 VSPHA1 VSENA IENA 0.01 µF IPWMSW VPWMSW 0.1 µF VS5VOUT IS5VOUT V VSREFB IREFB VSREFA IREFA A VSTBY ISTBY V IVM VM A 0.01 µF VSA1 VAOUT1 VSRCSA VRCS A VSA2 VAOUT2 1 33 V V V VSB1 VBOUT1 VSRCSB VRCSB VSB2 VBOUT2 1 33 V V V 10 kΩ10 kΩ A A AA A A A A A

12 V 75 Ω

„ Test Circuit Diagram 1. Test Circuit 1

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601308040 2008-04-11 VM 24 V 0.01 µF VPHB1 VPHA1 0.01 µF 15 Ω 330 µH 0.68 Ω VRCSA V 0.68 Ω VRCSB V 330 µH15 Ω 47 µF VPWMSW 1 µF 0.6 V BC2 BC1 TJMON VREFB PHB1 S5VOUT STBY IN0 IN1RCSB BOUT2 BOUT1 N.C. N.C. VM1 N.C. N.C. RCSA AOUT2 AOUT1 N.C. VM2 VPUMP GND IN2 IN3 ENABLEA PHA1 PWMSW VREFA N.C. N.C. 16 17 „ Test Circuit Diagram (continued) 2. Test Circuit 2

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601408040 2008-04-11 VBOUT2 VBOUT1 VAOUT2 VAOUT1 3 4 IIN VM 24 V 1 µF 0 V 0.01 µF VPHB1 VPHA1 0.01 µF 47 µF VV V V 3.3 V 2.5 V 2.5 V BC2 BC1 TJMON VREFB PHB1 S5VOUT STBY IN0 IN1RCSB BOUT2 BOUT1 N.C. N.C. VM1 N.C. N.C. RCSA AOUT2 AOUT1 N.C. VM2 VPUMP GND IN2 IN3 ENABLEA PHA1 PWMSW VREFA N.C. N.C. 16 17 „ Test Circuit Diagram (continued) 3. Test Circuit 3

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601508040 2008-04-11 VBOUT2 VBOUT1 3 4 IIN N.C. 12 VAOUT2 VAOUT1 N.C. 2 VM1 1 N.C. 4 N.C. 8 RCSA 11 AOUT2 9 AOUT1 13 N.C. 14 VM2 15 VPUMP 16 N.C. 10 N.C. 6 V V V V 1 µF „ Test Circuit Diagram (continued) 4. Test Circuit 4

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601608040 2008-04-11 5 V –1.5 –3 . 5 mA 0.6 V24 VHi-ZHi-Z0 V3.3 V0 V0 V0 V3.3 VON2112135 5 VHi-Z0 V24 VHi-ZHi-Z0 V3.3 V0 V0 V0 V0 VOFF11119, 2027 5 VHi-Z0.6 V24 VHi-ZHi-Z0 V3.3 V2.2 V*1*10.6 VON2333, 7, 9, 1316 5 VHi-Z0 V24 VHi-ZHi-Z0 V3.3 V5 V5 V5 V3.3 VON21124, 25, 2613

5 VHi-Z0 V24 VHi-ZHi-Z0 V5 V5 V5 V5 V5 VON21127, 28, 29

30, 31 5 VHi-Z0.6 V24 VHi-ZHi-Z0 V3.3 V0 V0V0 V3.3 VON2112134 3.3 V 3.3 V 3.3 V 5 V 5 V 5 V 5 V 5 V 5 V 2.5 V 2.5 V 2.5 V VSREFA VSREFB Hi-Z5 V24 VHi-ZHi-Z0 V3.3 V5 V5 V5 V3.3 VON2112225 Hi-Z2.1 V24 VHi-ZHi-Z0 V5 V5 V5 V5 V5 VON2111, 15, 226 3, 9 7, 13 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 0 V 3.3 V 3.3 V 3.3 V VPWMSW Hi-Z0 V24 VHi-ZHi-Z 0 V 1 V 0 V0.6 V2.2 V3.3 VOFF1223, 9 Hi-Z0 V24 VHi-ZHi-Z 0 V 1 V 0 V0.6 V0.6 V3.3 VOFF1223, 98 Hi-Z0.6 V24 VHi-ZHi-Z0 V0.6 V*1*10.6 VON2333, 7, 9, 1315 IS5VOUTVSTBYVM VSA1 VSB1 VSA2 VSB2 VSRCSA VSRCSB VSENA VSIN1 VSIN3 VSIN0 VSIN2 VSPHA1 VSPHB1 S6S5S2 Relay Conditions Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Measuring PinNo. Voltage Conditions 24 V 24 V 24 V 37 V 37 V 37 V 0 V 0.6 V 0 V 0 V 0 V

0 V0 V0 V0 V5 V0 V0 V0 VOFF3, 7, 9, 13

4 37 VHi-Z0 V0 V0 V0 V5 VOFF Hi-Z37 V0 V0 V0 V0 V0 VOFF Hi-ZHi-Z0 V0 V0 V0 V0 VON 22, 24, 25, 26, 27, 28, 29, 30, 31 Hi-ZHi-Z0 V3.3 V0 V0 V3.3 VON1, 15, 225 Hi-ZHi-Z 0 V 1 V 0 V2.2 V0.6 V3.3 VOFF3, 9 Note) *1 : Refer to the “Electrical Characteristics Test Procedures” (P.18) for the input voltage of VSIN0 , VSIN1 , VSIN2 , VSIN3 (No.15, No16). „ Electrical Characteristics Test Procedures 1. Test Circuit 1

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601708040 2008-04-11 7) High-level IN input voltage V INH 8) Low-level IN input voltage V INL 31) Comp threshold H (100%) VT H 32) Comp threshold C (67%) VT C 33) Comp threshold L (33%) VT L VRCSA / VRCSB 12 V 24 V 0 V Region A Region B 0.6 V 2.2 V 0.6V VSIN2 Voltage Conditions No. Measure the VAOUT2/VBOUT2 threshold voltage.2.2 V2.2 V0.6 VAOUT2 / BOUT27, 8, 33 7, 8, 32 8, 31 Measure the VAOUT2/VBOUT2 threshold voltage.0.6 V0.6 V2.2 VAOUT2 / BOUT2 VSIN3VSIN1VSIN0 Measure the VAOUT2/VBOUT2 threshold voltage.0.6 V0.6 V0.6 VAOUT2 / BOUT2 StatusMeasuring Pin 11) High-level PHA1/PHB1 input voltage V PHAH, VPHBH 12) Low-level PHA1/PHB1 input voltage V PHAL, VPHBL Measure the AOUT1/BOUT1 voltage and AOUT2/BOUT2 voltage with the input voltage set to high level and low level respectively. AOUT2 /BOUT2 AOUT2 /BOUT2 Low-level output2.2 V High-level output2.2 VAOUT1 /BOUT1 VSPHA1 / VSPHB1 High-level output Low-level output0.6 VAOUT1 /BOUT1 0.6 V Status Voltage Conditions Measuring Pin VSPHA1 / VSPHB1 VAOUT1 , VBOUT1 24 V VAOUT2 , VBOUT2 VSPHA1 / VSPHB1 SPECSPEC 0.6 V 2.2 V 24 V SPEC SPEC 0 V 0 V "L" "L" "H" "H" VAOUT2 , VBOUT2 „ Electrical Characteristics Test Procedures (continued) 1. Test Circuit 1(continued) Perform RCS voltage sweeping and measure the threshold voltages on the output pins respectively. Region A : Always high-level output Region B : High-level output with the duty kept to a minimum

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601808040 2008-04-11 Set to VSPHA1 /VSPHB1 = 0.6 V and check that the threshold voltage is in the specification range (SPEC) under the following condition 0.6 V 0 V V SIN0 0.6 V 0 V VSIN1 2.2 V 0 V VSIN2 0.6 V 0 V VSIN3 12 V 0 V VAOUT1 / VBOUT1

2.2 V 12 V

24 V0.6 V VAOUT2 / VBOUT2 VSENA 35) Output impedance Z S5VOUT ZS5VOUT = 2m A VA–VB VS5VOUT IS5VOUT 0 mA –3.5 mA VA VB –1.5 mA VENABLE VAOUT1 , VBOUT1 12 V VAOUT2 , VBOUT2 VENABLE SPECSPEC 0.6 V 2.2 V 24 V SPECSPEC 0 V 0 V 15) High-level ENABLEA input voltage V ENABLEAH 16) Low-level ENABLEA input voltage V ENABLEAL 12 V „ Electrical Characteristics Test Procedures (continued) 1. Test Circuit 1(continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406601908040 2008-04-11 2. Test Circuit 2 19) High-level PWMSW input voltage V PWMSWH 20) Low-level PWMSW input voltage V PWMSWL 28) PWM frequency1 f PWM1 29) PWM frequency2 f PWM2 30) Pulse blanking time T B Each value is obtained by the voltage of AOUT1, AOUT2, BOUT1, and BOUT2 at VREFA = VREFB = 0 V and PHA1 = PHB1 = 0 V or PHA1 = PHB1 = 3.3 V. The VAOUT1 / VAOUT2 / VBOUT1 / VBOUT2 output waveform is shown below. PWM frequency f PWM Measure the cycle time of output voltage pulses and obtain the value from the following formula. fPWM = 1 / tPWM VAOUT1 / VAOUT2 / VBOUT1 / VBOUT2 output waveform TB 0 V 12 V TB tPWM t[µs] Pulse blanking time T B Measure the low-level time of voltage output. PWMSW input voltage PWMSW VPWMSWH / VPWMSWL 52 kHz 26 kHz2.2 VPWMSW 0.6 V Status Voltage Conditions Measuring Pin „ Electrical Characteristics Test Procedures (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602008040 2008-04-11 3. Test Circuit 3 1) High-level output saturation voltage V OH 2) Low-level output saturation voltage V OL C No. Measure the AOUT1, AOUT2, BOUT1, and BOUT2 voltage at (e) to (h) above. 0.5 AAOUT1/AOUT2/BOUT1/BOUT2 = S4 / S3 / S2 / S1 AOUT1/AOUT2 BOUT1/BOUT2 IINS9 Measure the AOUT1, AOUT2, BOUT1, and BOUT2 voltage at (a) to (d) above.–0.5 AAOUT1/AOUT2/BOUT1/BOUT2 = S4 / S3 / S2 / S1 AOUT1/AOUT2 BOUT1/BOUT2 Status Conditions Measuring Pin VPHA1 VPHB1 VAOUT1 24 V 12 V 0 V 5 V 0 V 5 V 0 V 24 V 12 V 0 V VBOUT1 VAOUT2 24 V 12 V 0 V 24 V 12 V 0 V VBOUT2 (a) (b) (c) (f) (e) (g) (d) (h) 4. Test Circuit 4 3) Flywheel diode voltage V DI Apply ±0.5 A to IIN, and measure the VAOUT2.3AOUT23 Apply ±0.5 A to IIN, and measure the VBOUT1.2BOUT13 Apply ±0.5 A to IIN, and measure the VAOUT1.AOUT13 C No. IIN Apply ±0.5 A to IIN, and measure the VBOUT2.BOUT2 Measuring Pin „ Electrical Characteristics Test Procedures (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602108040 2008-04-11 Pin16 : Charge Pump circuit output 17 : Charge Pump capacitor connection 2 ʕʕ16 Pin3 : Phase B motor drive output 2 5 : Phase B current detection 7 : Phase B motor drive output 1 9 : Phase A motor drive output 2 11 : Phase A current detection 13 : Phase A motor drive output 1 ʕʕ Impedance DescriptionInternal circuitWaveform and voltage Pin No. Pin3 BOUT2

7 BOUT1

9 AOUT2

13 AOUT1

11 RCSA

„ Technical Data y Circuit diagrams of the input/output part and pin function descriptions Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602208040 2008-04-11 Pin19 : Phase A torque reference voltage input 20 : Phase B torque reference voltage input 50 kΩʕ19 Pin18 : Charge Pump capacitor connection 1ʕʕ18 Impedance DescriptionInternal circuitWaveform and voltage Pin No. BC1 Pin19 VREFA 10k15.91k3.98k „ Technical Data (continued) y Circuit diagrams of the input/output part and pin function descriptions (continued) Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602308040 2008-04-11 Pin22 : Standby setting154.5 kΩʕ22 Pin21 : Internal reference voltage (5 V output)ʕʕ21 Impedance DescriptionInternal circuitWaveform and voltage Pin No. Pin21 S5VOUT Pin22 STBY 103k 51.5k 102k „ Technical Data (continued) y Circuit diagrams of the input/output part and pin function descriptions (continued) Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602408040 2008-04-11 Pin25 : Phase A phase selection input 26 : Phase B phase selection input100 kΩʕ25 Pin24 : PWM frequency selection input200 kΩʕ24 Impedance DescriptionInternal circuitWaveform and voltage Pin No. Pin24 PWMSW 200k 50k

25 PHA1Pin

„ Technical Data (continued) y Circuit diagrams of the input/output part and pin function descriptions (continued) Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602508040 2008-04-11 Pin32 : VBE monitorʕʕ32 ʕʕʕSym bols Pin27 : Phase A output torque control 1 28 : Phase A output torque control 2 29 : Phase B output torque control 1 30 : Phase B output torque control 2 31 : Phase A/B start/stop signal input ʕʕ Impedance DescriptionInternal circuitWaveform and voltage Pin No. Pin32 TJMON S5VOUT (Pin21) VM(Pin1, Pin15) Diode Zener diode Ground 800

28 IN1

„ Technical Data (continued) y Circuit diagrams of the input/output part and pin function descriptions (continued) Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602608040 2008-04-11 OFFOFF—High HighLowLowLow Low AOUT2/BOUT2 Low ENABLEA HighHigh AOUT1/BOUT1PHA1/PHB1 Notes) Rs : current detection region IN1 = IN3 = Low level 2) Output polarity OFFONHighLow Low ENABLE Low High STBY ONON OFFOFF Output transistorControl/Charge pump circuit 1) Control/Charge pump circuit (VREF / 5) × (1 / Rs) × (1 / 3)HighLowLow High High Low Low IN2 (VREF / 5) × (1 / Rs) (VREF / 5) × (1 / Rs) A-ch. Output Current LowLow LowHigh Don't careHigh Low IN0 Low IN1 A-ch. output B-ch. output High High Low Low IN2 (VREF / 5) × (1 / Rs) (VREF / 5) × (1 / Rs) A-ch. Output Current 0Low (VREF / 5) × (1 / Rs) × (2 / 3)High (VREF / 5) × (1 / Rs)High Low IN0 (VREF / 5) × (1 / Rs) B-ch. Output Current 3) Output current of 2-phase excitation / half step / 1-2 phase excitation 4) Output current of W1-2 phase excitation (VREF / 5) × (1 / Rs) × (1 / 3)HighLowLow High High Low Low IN2 0Don't careLow (VREF / 5) × (1 / Rs) × (2 / 3)LowHigh (VREF / 5) × (1 / Rs)LowHigh Low IN0 (VREF / 5) × (1 / Rs)Low B-ch. Output CurrentIN3 „ Technical Data ycontrol mode 1. Truth table Note) Rs : current detection region Note) Rs : current detection region

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602708040 2008-04-11 1) Drive of 2-phase excitation (4steps sequence) (IN0 to IN3 = Low) A-ch. Motor current VPHB1 1234 FWD flow-in flow-outflow-in flow-out VPHA1 B-ch. Motor current 1234 REV flow-in flow-out flow-in flow-outA-ch. Motor current B-ch. Motor current VPHB1 VPHA1 „ Technical Data (continued) ycontrol mode (continued) 2. Output wave

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602808040 2008-04-11 2) Drive of half step (8-steps sequence) (IN1 = IN3 = Low) (Ex.) FWD 1234 78 56 A-ch. Motor current flow-in flow-outflow-in flow-outB-ch. Motor current VPHB1 VPHA1 VIN0 VIN2 1234 78 56 REV A-ch. Motor current flow-in flow-outflow-in flow-outB-ch. Motor current VPHB1 VPHA1 VIN0 VIN2 REV FWD „ Technical Data (continued) ycontrol mode (continued) 2. Output wave (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406602908040 2008-04-11 (Ex.) FWD 12 3 456 78 A-ch. Motor current flow-in flow-outflow-in flow-outB-ch. Motor current VPHB1 VPHA1 VIN0 VIN2 REV 1 2 3 45678 A-ch. Motor current flow-in flow-outflow-in flow-outB-ch. Motor current VPHB1 VPHA1 VIN0 VIN2 3) Drive of 1-2 phase excitation (8-steps sequence) (IN1 = IN3 = Low) REV FWD „ Technical Data (continued) ycontrol mode (continued) 2. Output wave (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603008040 2008-04-11 4) Drive of W1-2 phase excitation (16-steps sequence) 123456789 1 0 1 1 1 2 1 3 1 4 1 5 1 6 FWD A-ch. Motor current flow-in flow-outflow-in flow-out B-ch. Motor current VPHB1 VPHA1 VIN0 VIN1 VIN2 VIN3 123456789 1 0 1 1 1 2 1 3 1 4 1 5 1 6 REV A-ch. Motor current flow-in flow-outflow-in flow-out B-ch. Motor current VPHB1 VPHA1 VIN0 VIN1 VIN2 VIN3 REV FWD „ Technical Data (continued) ycontrol mode (continued) 2. Output wave (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603108040 2008-04-11 y Special attention and precaution in using 1. This IC is intended to be used for general electronic equipment and driving stepping motor. Consult our sales staff in advance for information on the following applications: x Special applications in which exceptional quality and reliability are required, or if the failure or malfunction of this IC may directly jeopardize life or harm the human body. x Any applications other than the standard applications intended. (1) Space appliance (such as artificial satellite, and rocket) (2) Traffic control equipment (such as for automobile, airplane, train, and ship) (3) Medical equipment for life support (4) Submarine transponder (5) Control equipment for power plant (6) Disaster prevention and security device (7) Weapon (8) Others : Applications of which reliability equivalent to (1) to (7) is required 2. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board), it might smoke or ignite. 3. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit between pins. In addition, refer to the Pin Description for the pin configuration. 4. Perform a visual inspection on the PCB be fore applying power, otherwise damage might happen due to problems such as a solder- bridge between the pins of the semiconductor device. Also, perform a full technical verification on the assembly quality, because the same damage possibly can happen due to conductive substances, such as solder ball, that adhere to the LSI during transportation. 5. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs such as output pin- V M short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin short (load short) . And, safety measures such as an installation of fuses are recommended because the extent of the above-mentioned damage and smoke emission will depend on the current capability of the power supply. Pay special attention to the following pins so that they are not short-circuited with the VM pin, ground pin, other output pin, or current detection pin. (1) AOUT1 (Pin 13), AOUT2 (Pin 9), BOUT1 (Pin 7), BOUT2 (Pin 3) (2) BC2 (Pin 17), VPUMP (Pin 16) (3) VM1 (Pin 1), VM2 (Pin 15), S5VOUT(Pin 21) (4) RCSA (Pin 11), RCSB (Pin 5) The higher the current capacity of power supply is, the higher the possibility of the above destruction or smoke generation. Therefore, it is recommended to take safety countermeasures, such as the use of a fuse. 6. When using the LSI for new models, verify the safe ty including the long-term reliability for each product. 7. When the application system is designed by using this LSI, be sure to confirm notes in this book. Be sure to read the notes to descriptions and the usage notes in the book. „ Usage Notes

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603208040 2008-04-11 y Notes of Power LSI 1. Perform thermal design work with consider ation of a sufficient margin to keep the power dissipation based on supply voltage, load, and ambient temperature conditions. (The IC is recommended that junctions are designed below 70% to 80% of Absolute Maximum Rating.) 2. The protection circuit is incorporated for the pur pose of securing safety if the IC malfunctions. Therefore, design the protection circuit so that the protection circuit will not operate under normal operating conditions. The temperature protection circuit, in particular, may be destructed before the temperature protection circuit operates if the area of safety operation of the device or the maximum rating is exceeded instantaneously due to the short-circuiting between the output pin and VM pin or a ground fault caused by the output pin and ground pin. 3. Unless specified in the product specifications, make sure that negative voltage or excessive voltage are not applied to the pins because the device might be damaged, which could happen due to negative voltage or excessive voltage generated during the ON and OFF timing when the inductive load of a motor coil or actuator coils of optical pick-up is being driven. 4. The product which has specified ASO (Area of Safe Operation) should be operated in ASO. 5. Verify the risks which might be caused by the malfunctions of external components. 6. Set the value of the cap acitor between the VPUMP and GND pins so that the voltage on the VPUMP (Pin 16) will not exceed 43 V in any case regardless of whether it is a transient phenomenon or not while the motor standing by is started. 7. This IC employs a PWM drive method that switches the high-current output of the output transistor. Therefore, the IC is apt to generate noise that may cause the IC to malfunction or have fatal damage. To prevent these problems, the power supply must be stable enough. Therefore, the capacitance between the S5VOUT and GND pins must be 0.1 µF and the one for power supply stabilization between the VM and GND pins must be a minimum of 47 µF (recommendation) and as close as possible to the IC so that PWM noise will not cause the IC to malfunction or have fatal damage. „ Usage Notes (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603308040 2008-04-11 TB 1/fPWM Normal operation The set current is less than the minimum current. Set current Set current Minimum current fPWM : PWM frequency TB : Pulse blanking time (Refer to No. 28 to No. 30 of Electrical Characteristics)Fig. 1 RCS current waveform 8. Pulse blanking time In order to prevent mistakes in current detection resulting noise, this IC is provided with a pulse blanking time of 0.75 µs (typ.). The motor current will not be less than the current determined by the pulse blanking time. Pay utmost attention at the time of minute current control. Fig.1 shows the relationship between the pulse blanking time and minimum current value. The increase or decrease in the motor current is determined by a load and a resistance of a internal winding in the motor, induced voltage, and PWM on-duty. 9. VREF voltage When VREF voltage is set to lower, an error detection of motor current might be caused by noise because Comp threshold voltage (No.31, 32, 33 in the “Electrical Characteristics” / P.10) becomes low. Use this IC after confirming there is no error detection when VREF voltage is less than the set value. 10. Notes on the interface Absolute maximum ratings of Pin 19, 20, 22 and Pin 24 to Pin31 are –0.3 V to 6 V. When the current setting for a motor is large and the lead line of GND is long, the potential of GND in this LSI will rise. Take notice that there is a possibility that potential of the interface pin is negative compared with that of GND in this LSI even if 0 V is applied to the interface pin. At that time, pay attention so that the input voltage of these pins might not exceed the values which are set in the allowable voltage range. „ Usage Notes (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603408040 2008-04-11 11. Notes at the clear of standby mode / the rise of VM supply In this LSI, all phases are forced OFF for about 300 µs (typ.) after the clear of standby mode or the rise of VM supply. (See the following figure.) This is why the operation mode can be started after the charge pump circuit voltage boosts efficiently at shift to operation mode from standby mode / VM supply = OFF, when the charge pump operation stops. Therefore, the excitation patterns input after the forced all phase OFF period are effect. When the charge pump circuit rises slowly owing to that the capacitance value between VPUMP-GND is made large etc. and the booster voltage cannot rise efficiently for the forced all phase OFF, the IC might overheat. In this case, clear the standby mode at ENABLE = High or restart after VM supply is turned ON, the booster voltage rises efficiently, and ENABLE is shifted to Low. The thermal protection is same operation as that at VM supply OFF. Motor output Standby Standby Forced all phase OFF Start-up (at ENABLE = Low) All phase OFF (at ENABLE = High) STBY About 300 µs(typ) High Low All phase OFF Motor output Forced all phase OFF Start-up (at ENABLE = Low) All phase OFF (at ENABLE = High) VM About 300 µs(typ) Low High All phase OFF (Low voltage protection) [In case that standby mode is cleared] [In case that VM supply rises] After VM supply exceeds threshold VM = 8.8 V(typ), all phases are forced OFF for about 300 µs(typ). Standby mode clear „ Usage Notes (continued)

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603508040 2008-04-11 18.48ిѹ<7> 18.48 S5VOUT = 5.0 V S5VOUT = 4.5 V Fig. 2 Input impedance of PHA1/PHB1 at VM power supply power on Fig. 3 Input impedance of PWMSW at VM power supply power on S5VOUT = 5.5 V Z = ໿4.7 kΩ „ Usage Notes (continued) Z ≅ 4.7 kΩ PWMSW voltage [V] PWMSW current [µA] 12. PWMSW, PHA1, PHB1 pins Under conditions where VM power supply is shutdown in standby mode (STBY pin = High level), when applying approx. 0.7 V (TYP) or more to PWMSW (Pin 24), PHA1 (Pin 25), PHB1 (Pin 26), the current flows into above-mentioned pins owing to parasitic elements in the LSI and the current flowing into the above-mentioned pins varies from the current determined by pull the above-mentioned pins. However, it is recommended to set the voltage applied to the above-mentioned to 0.7 V or less at shutdown of VM power supply in standby mode. Also, in case of the voltage of above-mentioned pins > S5VOUT(Pin 21) – 0.2 V at power on to VM power supply, the current flows owing to parasitic elements in the LSI, and the current flowing into the above-mentioned pins varies (refer to Fig. 2, 3). As the same as at standby, there is no problem that the voltage up to rating is applied to the above-mentioned pins. However, it is recommended to set the voltage applied to the above-mentioned pins to 4.3 V or less. 1)"1)# S5VOUT = 5.0 V S5VOUT = 4.5 V S5VOUT = 5.5 V Z = ໿4.7 kΩ Z = 200 kΩ PHA1/PHB1 voltage [V] PHA1/PHB1 current [µA] Z ≅ 4.7 kΩ

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603608040 2008-04-11 Temp[°C] VBE[V] ∆VBE / ∆temp = –1.82 [mV / °C] 1500 The temperature characteristic of TJMON 13. In the case of measuring the chip temperature of the IC, measure the voltage of TJMON (Pin 32) and presume chip temperature from following data. Use the following data as reference data. Before applying the IC to a product, conduct a sufficient reliability test of the IC along with the evaluation of the product with the IC incorporated. Power Supply VM time Rising edge every 0.1 V/µso r l e s s Falling edge every 0.1 V/µso r l e s s „ Usage Notes (continued) 14. Power supply start up speed and shutdown speed Set the rising speed to 0.1 V/µs or less for VM voltage at power on to VM (Pin 1, 15). It is recommended that the falling speed of VM voltage is set to 0.1 V/µs or less on condition of STBY = High or ENABLE = High at shutdown. In case of shutdown at motor drive (STBY = Low and ENABLE = Low), the motor current might flow back to the power supply and supply voltage might not fall stably. If the rising or falling speed of power supply is too high, which might cause malfunctions or destruction on the IC. In this case, perform the long-term reliability test and confirm the sufficient evaluation for products.

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.214406603708040 2008-04-11 16. A high current flows into this IC. Therefore, the common impedance of the PCB pattern cannot be ignored. Take the following points into consideration and design the PCB pattern of the motor. A high current flows into the line between the VM1 (Pin 1) and VM2 (Pin 15) pins. Therefore, noise is generated with ease at the time of switching due to the inductance (L) of the line, which may result in the malfunctioning or destruction of the IC. (Fig. 4) As shown in the circuit diagram on the right-hand side, the escape way of the noise is secured by connecting a capacitor to the connector close to the VM pin of the IC. This makes it possible to suppress the direct VM pin voltage of the IC. Make the settings as shown in the circuit diagram on Fig. 5 as much as possible. Fig. 4 Deprecated PCB VM GND L C RCS VM GND Fig. 5 Recommended PCB VM GND L C RCS VM GND Low spike amplitude due to the capacitance between the VM pin and ground pin 15. RCS line Take consideration in the following figure and the points and design PCB pattern. (1) Point 1 Design so that the wiring to the current detection pins of this IC (RCSA, RCSB) should be thick and short in order to lower the impedance. This is why the current cannot be detected correctly owing to the wiring impedance, and the current might not be supplied to a motor sufficiently. (2) Point 2 Design so that the wiring between the current detection resistor and the connector GND (Point 2 in the following figure) should be thick and short in order to lower the impedance. As the same as Point 1, a sufficient current might not be supplied due to the wiring impedance. In addition, if there is a common impedance between GND and RCSA or RCSB, a peak detection may be detected by mistake. Therefore, connect the wiring between GND and RCSA or RCSB independently. (3) Point 3 Connect the GND of this IC to the connector on PCB independently. Separate the wiring which is a large current line (Point 2) from that of GND, and make these wirings with one-point shorted at the connector as the following figure. That can minimize the fluctuation of GND. Motor Connector GND GND RCSA/RCSB IC Current limit detection resister Point 1 Point 2 Point 3 (A) IC IC „ Usage Notes (continued)

Regulations No. : SC3S1711 Package Code Semiconductor Company Matsushita Electric Industrial Co., Ltd. SSOP032-P-0300B Total Pages Page M.ItohM.OkajimaH.YoshidaK.Komichi Prepared byChecked byApplied byEstablished by Exclusive use for AN44066A Established: 2008-01-08 Revised : -

Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Unit:mm1. Outline Drawing Lead Finish Method : SnBi Plating Lead Material : Cu Alloy Body Material : Epoxy Resin Total Pages Page PACKAGE STANDARDS SSOP032-P-0300B Exclusive use for AN44066A Established: 2008-01-08 Revised : -

Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Total Pages Page PACKAGE STANDARDS SSOP032-P-0300B 2. Package Structure (Technical Report : Reference Value) Exclusive use for AN44066A Method Material Method Material Method Material 31 6 42 5 7 Si Transfer molding Epoxy resin Wirebond Outer lead surface Au Cu alloy Ag plating Leadframe material Inner lead surface Chip Material Resin adhesive method Mass 250 mg SnBi plating Adhesive material Thermo-compression bonding Molding Chip mount Established: 2008-01-08 Revised : -

Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Total Pages Page PACKAGE STANDARDS SSOP032-P-0300B 3. Mark Drawing Exclusive use for AN44066A Product Name Brand Mark Date Code Established: 2008-01-08 Revised : -

Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Total Pages Page PACKAGE STANDARDS SSOP032-P-0300B 4. Power Dissipation (Technical Report) Exclusive use for AN44066A 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1.400 0 25 50 75 100 125 150 Ambient Temperature( o C ) Power Dissipation(Ｗ) Mount On PWB ［GlassEpoxy:50X50X0.8t(mm)］ Rth(j-a) = 96.9 ºC/W Without PWB Rth(j-a) = 187.1 ºC/W 1.290 0.668 Established: 2008-01-08 Revised : -

Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Total Pages Page PACKAGE STANDARDS SSOP032-P-0300B 5. Power Dissipation（Supplementary Explanation） Package Semiconductor element Rth(j-c) Rth(c-a) Rth(j-a) Ta Tc Tj PWB [Definition of each temperature and thermal resistance] Ta ：Ambient air temperature ˞The temperature of the air is defined at the position where the convection, radiation, etc. don’t affect the temperature value, and it’s separated from the heating elements. Tc ：It’s the temperature near the center of a package surface. The package surface is defined at the opposite side if the PWB. Tj ：Semiconductor element surface temperature (Junction temperature.) Rth(j-c)：The thermal resistance (difference of temperature of per 1 Watts) between a semiconductor element junction part and the package surface Rth(c-a)：The thermal resistance (difference of temperature of per 1 Watts) between the package surface and the ambient air Rth(j-a)：The thermal resistance (difference of temperature of per 1 Watts) between a semiconductor element junction part and the ambient air [Supplementary information of PWB to be used for measurement] The supplement of PWB information for Power Dissipation data (Technical Report）are shown below. FR-44-layer4-layer FR-41-layerGlass-Epoxy Resin MaterialTotal LayerIndication [Notes about Power Dissipation（Thermal Resistance）] Power Dissipation values（Thermal Resistance）depend on the conditions of the surroundings, such as specification of PWB and a mounting condition , and a ambient temperature. (Power Dissipation (Thermal Resistance) is not a fixed value.) The Power Dissipation value（Technical Report）is the experiment result in specific conditions (evaluation environment of SEMI standard conformity) ,and keep in mind that Power Dissipation values (Thermal resistance) depend on circumference conditions and also change. [Experiment environment] Power Dissipation（Technical Report）is a result in the experiment environment of SEMI standard conformity. （Ambient air temperature (Ta) is 25 degrees C） [Definition formula] Rth(j-c) = Tj-Tc P Rth(c-a) = Tc-Ta P Rth(j-a) = Tj-Ta P (ˆ/W) (ˆ/W) (ˆ/W) Tj={Rth(j-c)+Rth(c-a)}ʷP+Ta =Rth(j-a)ʷP+Ta P:power(W)Fig1. Definition image = Rth(j-c)＋Rth(c-a) Exclusive use for AN44066A Established: 2008-01-08 Revised : -

In case that the semiconductor packages are mounted on the PCB, the soldering should be performed under the following conditions. ① Reflow soldering ＊Peak temperature : less than 260 ℃ ＊Temperature is measured at package surface point ② Wave soldering (Flow soldering) ＊Temp. of solder : 260 ℃ or less ＊Soak time : within 5 s ＊Number of flow : only 1 time ③ Manual soldering ＊Iron Temperature : 350 ℃ or less (Device lead temperature : 270 ℃､10 s max.) ＊Soldering time : within 3 s ＊Number of manual soldering : only 1 time No. value １．Recommended Soldering Conditions max. 260 ℃Reflow peak temp. : Industrial Devices Company, Panasonic Corporation 2012/3/7 Prepared Revised No． mark contents Recommended Soldering Conditions Total pages page 1T 1 Pre-heating temp. 150 ℃～180 ℃ 2 ｔ１ Pre-heating temp. hold time 60 s～120 s 3a Rising rate 2 ℃/s～5 ℃/s 4T p Peak temp. 255 ℃+5 ℃､-0 ℃ 5t p Peak temp. hold time 10 s±3 s b Down rate 2 ℃/s～5 ℃/s 6t w High temp. region hold time within 60 s (≧220 ℃) 11-183 Product name : Package : AN44066A-VF SSOP032-P-0300B 8- Number of reflow within 2 times 140 160 180 200 220 240 255 ℃ Time tw tp Tp 220 ℃ 260 ℃ a b 260

※ Because the taping and the magazine materials are not the heat-resistant materials, the bake at 125℃ cannot be done. Therefore, please solder everything or control everything in the rule time. Please keep them in an equal environment with the moisture-proof packaging or dry box. (Temperature: room temperature, relative humidity: 30% or less. ) To control storage time, when bake in the taping and the magazine is necessary, it is necessary for each type to set a bake condition. Please inquire of our company. ① Storage environment conditions: keep the following conditions Ta=5 ℃～30 ℃､RH=30 %～70 %. ② Storage period before opening dry pack shall be 1year from a shipping day under Ta=5 ℃～30 ℃､ RH=30 %～70 %. When the storage exceeds, Bake at 125 ℃ with 15 h to 25 h. ③ Baking cycle should be only one time. Please be cautious of solderability at baking. ④ In case that use reflow two times, 2nd reflow must be finished within 336 hours. ⑤ Remove flux sufficiently from product in the washing process. ( Flux : Chlorineless rosin flux is recommended.) ⑥ In case that use ultrasonic for product washing, There is the possibility that the resonance may occur due to the frequency and shape of PCB. It may be affected to the strength of lead. Please be cautious of this matter. No. Industrial Devices Company, Panasonic Corporation 2012/3/7 Prepared Revised Recommended Soldering Conditions Total pages page ☆ AN44066A-VF limitation, low temperature bake condition ： 40 ℃ / 25 %RH or less / 192 h 11-183 2．Storage environment after dry pack opening Open dry pack ① Storage environment kept up to reflow soldering (at 30 ℃/70 %RH max. , within 336 h) ② Storage environment kept up to wabe soldering (at 30 ℃/70 %RH max. , within 336 h) Soldering Bake at 125 ℃ with 15 h to 25 h *Please refer to the following when doing at the low temperature bake. When the storage time exceeds ( ① 336 h or ② 336 h ) 3．Note

Semiconductor Company, Panasonic Corporation 2009.03.09 Prepared Revised Recommended Land Pattern Total pages page

Specifications of packing by the embossment tape ( Specifications for dampproof packing of the reel without the inner carton) Total pages Packing Specification page Revised Semiconductor Company，Panasonic Corporation Prepared 2009.03.09 AN12345A-NB 3000pcs. (3N)AN12345A-NB 1000 (3N)2 10N112200-NB 108010 AN12345A-NB AN12345A-NB 1.23-45 410N112300 2058 USP4B42516 AN12345A-NB 12345678 3000 23456789 3000 34567890 3000 45678901 3000 307 150000 Panasonic M MADE IN JAPAN Embossment carrier tape Top cover tape AN12345A-NB 90000pcs. (3N)AN12345A-NB 1000 (3N)2 10N112200-NB 108010 AN12345A-NB AN12345A-NB 1.23-45 410N112300 2058 USP4B42516 AN12345A-NB 12345678 3000 23456789 3000 34567890 3000 45678901 3000 307 150000 Panasonic M MADE IN JAPAN Corrugated cardboard for partition Outer box Laminated aluminum bag Inner frame C3 Label (Sampl)Reel Desiccant C3 Label (Sampl)

Semiconductor Company，Panasonic Corporation Prepared 2009.03.09 Total pages Packing Specification page Unit : mm Packing 1) Tape Reel VF Form IC quantity Contents Packing quantity 2) Reel 3) Packing case

2000 Pcs Reel × 1Pcs

Packing case 10000 Pcs Reel × ５Pcs Draw out direction Emboss carrier tape 25.5 330 360 360 220

Packing Specification Total pages page 2009.03.09 Prepared Revised Semiconductor Company，Panasonic Corporation Unit : mm

Industrial Devices Company, Panasonic Corporation

1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan

Tel:075-951-8151

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