AN1431T PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

The AN1431T and AN1431M are high accuracy stabilized power supplies in which the output voltage can be adjusted in the range from approx. 2.5 to 36V by using the external resistor under the operating temperature. Because of its fast rise charac- teristics, it can be replaced with Zener diode and has the wide application range. n Features

  • High precision reference voltage : 2.5V±2%
  • High-temperature stability : 17ppm/˚C typ.
  • Output voltage externally adjustable : 2.5 to 36V
  • Fast rise
  • Low input impedance : 0.2Ω (typ.)
  • Low output noise voltage AN1431T, AN1431M Surface-mount Adjustable Output Shunt Regulator Unit : mmAN1431T JEDEC : TO-92 (SSIP003-P-0000) 5.0–0.2 5.1–0.213.5–0.5 0.45 2.3–0.22.54 321 +0.2 – 0.1 4.0–0.2 3 2 1 3 2 Error Amp. Current Source Voltage Reference Output Tr IK V 1 R 1 R 2 R 1 R 2 IREF V REF V KA V KA = VREF (1 + ) + IREF · R1 R 2 = 2.5kΩ Pin number in is for the AN1431T. Pin number in is for the AN1431M. n Block Diagram Unit : mmAN1431M JEDEC : TO-92 (SSIP003-P-0000) 5.0–0.2 5.1–0.213.5–0.5 0.45 2.3–0.22.54 321 +0.2 – 0.1 4.0–0.2 n Pin Name 〈AN1431T 〉 Pin No. Pin name Cathode Reference pin Anode 〈AN1431M 〉 Pin No. Pin name Reference pin Anode Cathode

V m A m W m A n A bsolute M axim um R atings (Ta=25˚C ) –100 to+150 650 * – 0.05 to+10 –20 to+85 –25 to+80 –55 to+150 –55 to+125 Supply voltage Supply current Pow er dissipation R eference input current O perating am bient tem perature Storage tem perature A N 1431T A N 1431M A N 1431T A N 1431M * For the A N 1431M , SM to the printed board (glass epoxy of 20 × 20 × 1.7m m w ith copper film of 1cm 2) Param eter Sym bol R ating U nit Param eter Sym bol R ange n R ecom m ended O perating R ange (Ta=25˚C ) O perating supply voltage range V K A V R EF (2.5 to 36V ) R eference voltage V R EF 2.55 V2.50V K A =V R EF, IK =10m A V K A =V R EF, IK =10m A , Ta=0 to+70˚C R eference voltage fluctuation ΔV R EF –2.7 m V /V–1.2IK =10m A , D V K A =10V to V R EF ΔV K A m V /VIK =10m A , D V K A =36 to 10V R eference input current IR EF µA2IK =10m A , R 1=10kΩ , R 2= ∞ µAIK =10m A , R 1=10kΩ , R 2= ∞ , Ta=0 to+70˚CR eference input current tem perature deviation IR EF (Jev) *2 m A0.4V K A =V R EF M inim um cathode current Im in µA0.1V K A =36V , V R EF=0VO ff-state cathode current IO FF ΩD ynam ic im pedance |ZK A | *3 V K A =V R EF, IK =1 to 100m A , f 1kH z 1.0 0.5 1.2 1.0 2.45 R eference voltage tem perature deviation V R EF (Jev) *1 *2 m V3 17 0.4 0.2 Param eter Sym bol C ondition m in typ m ax U nit n Electrical C haracteristics (Ta=25˚C )

V R EF (m ax) V R EF (m in) V R EF (dev) = V R EF (m ax) –V R EF (m in) V R EF (dev) V R EF (m ax) =2500m V (Ta=30˚C ), V R EF (m in) =2497m V (Ta=0˚C ), (V R EF (dev) =3m V ), V R EF=2499m V (Ta=25˚C ) ΔTa=70˚C ΔTa ΔTa IR EF IR EF (m ax) IR EF (m in) IR EF (dev) = IR EF (m ax) – IR EF (m in) IR EF (dev) ΔTa |aV R EF|= × 106 (ppm /˚C )V R EF* V R EF (dev) 70˚C|aV R EF| = × 106=17.1 (ppm /˚C ) |ZK A | = 2499m V ΔIK ΔV K A |Z| = = |ZK A | 1 +ΔI ΔV R 2 R 1 3m V *V R EF at Ta=25˚C For exam ple, assum ing the follow ing ; Then, the follow ing expression is established. *2 These values are design reference values, not guaranteed ones. *3 The dynam ic im pedance is defined by the follow ing expression. The total dynam ic im pedance at ΔV R EF, ΔV K A , IR EF, and IR EF (dev) is as follow s. The tem perature coefficient aV R EF for the reference input voltage is equivalently given by the follow ing expression. 1000 900 800 700 600 500 400 300 200 100 0 20 40 60 80 100 120 140 160 A m bient Tem perature Ta (˚C ) Pow er D issipation PD (m W ) PD – Ta M ounting onto Substrate : 20 × 20 × 1.7m m G lass Epoxy Substrate, C opper Foil 1cm 2 or M ore n Power Dissipation

1.Shunt R egulator 4.C urrent B oost 5.A djustable O utput R egulator C om bined w ith 3-pin R egulator 2.C onstant C urrent Pow er Supply 3.C onstant C urrent Source A N 1431T/M IO IO V O R 1 V R EF R 2 R S R S +V +V +V V O+V R 1 V R EF R 2 R 1 V R EF R 2 A N 1431T/M A N 7805 A N 1431T/M A N 1431T/M V O = 1+ V R EF R 1 R 2 IO = V R EF R S IO = V R EF R S V O = 1+ V R EF R 1 R 2 V O = V R EF 1+ V O (m in) = V R EF + 5VR 1 R 2 n Application Circuits 2700 2650 2600 2550 2500 2450 2400 2350 –50 –25 0 25 50 75 100 125 A m bient Tem perature Ta (˚C ) R eference V oltage V R EF (m V ) V R EF – Ta V K =V R EF IK =10m A –40 –20 0 20 40 60 80 100 A m bient Tem perature Ta (˚C ) R eference Input C urrent IR EF (µA ) IR EF – Ta IK =10m A R 1=10kΩ R 2= ∞ n Characteristics Curve