AM4453 AITSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 8
Technical content
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 1 - DESCRIPTION FEATURES AM4453 is the P -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior, fast switching performance. These devices are well suited for high efficiency fast switching applications. The AM4453 is available in SOP8 package.
ORDERING INFORMATION
SPQ: 2,500pcs/Reel AM4453M8R AM4453M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products VDS = -20V, ID = -10.7A RDS(ON)=12mΩ(Typ.)@VGS=-10V RDS(ON)=14mΩ(Typ.)@VGS=-4.5V RDS(ON)=18mΩ(Typ.)@VGS=-2.5V RDS(ON)=23mΩ(Typ.)@VGS=-1.8V Fast switch Low gate charge High power and current handling capability Available in SOP8 Package
APPLICATIONS
LED Application Portable Equipment DC-DC Power Management TYPICAL APPLICATION
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current TA = 25°C -10.7A TA= 70°C -8.6A IDM, Pulsed Drain CurrentNOTE1 -42.8A IAS, Avalanche CurrentNOTE1 -25A EAS, Single Pulse Avalanche energy L=0.1mHNOTE1,6 31mJ PD, Power DissipationNOTE3 TA = 25°C 3.1W TA= 70°C 2W TJ, Maximum Junction Temperature −55°C ~ +150°C TSTG, Storage Temperature Range −55°C ~ +150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Min Typ Max Units Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - - 40 °C/W Thermal Resistance Junction to AmbientNOTE2,4 Steady-State - - 80 Thermal Resistance Junction to Case RθJC - - 30
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250μA -0.4 -0.6 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V, TJ=25°C - - -1 μA VDS=-16V, VGS=0V, TJ=75°C - - -10 Drain-source On-ResistanceNOTE5 RDS(ON) VGS=-10V IDS=-10.7A - 12 15 mΩ VGS=-4.5V, IDS=-8A - 14 17 VGS=-2.5V, IDS=-5A - 18 22 VGS=-1.8V, IDS=-3A - 23 28 Forward Transconductance Gfs VDS=-10V, ID=-10A - 33 - S Diode Characteristics Diode Forward Voltage NOTE5 VSD IS=-1A, VGS=0V - -0.7 -1 V Continuous Source Current IS - - -5.2 A Reverse Recovery Time trr IS=10A, dl/dt=100A/μs - 16.8 - ns Reverse Recovery Charge Qrr - 8 - nC Dynamic and Switching Parameters Total Gate Charge(10V) Qg VDS=-10V, VGS=-4.5V, IDS=-5A - 39 54 nC Total Gate Charge(4.5V) Qg - 19 26.6 Gate-Source Charge Qgs - 2.1 2.9 Gate-Drain Charge Qgd - 3.8 5.3 Input Capacitance Ciss VDS=-10V, VGS=0V, f=1MHz - 1680 - pF Output Capacitance Coss - 228 - Reverse Transfer Capacitance Crss - 115 - Turn-On Time td(on) VDD=-10V, VGEN=-4.5V, RG=10Ω, ID=-1A - 10 19 ns tr - 38 72 Turn-Off Time td(off) - 86 163 tf - 25 48 NOTE1: Pulsed width limited by maximum junction temperature TJ(MAX)=150°C, initial temperature TJ=25°C. NOTE2: Measure the value in a still air environment at TA=25 °C using an installation mounted on a 1 in2 FR-4 board. NOTE3: Current Rating based t≤10 sec thermal resistance rating NOTE4: The RθJA is the sum of the thermal resistance. NOTE5: The pulse test width is ≤300μs and the duty cycle ≦ 2%. NOTE6: The EAS data shows Maximum, tested and pulse width limited by maximum.
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC 0.050BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM4453 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2018 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of releva nt information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications , devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.