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AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 1 - DESCRIPTION FEATURES AM4435A is the P -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior , fast switching perform ance, and withstand high energy pulse in the avalanche and commutation mode. This device is suitable for use as a load switch or PWM applications. The AM4435A is available in SOP8 package.

ORDERING INFORMATION

SPQ: 2,500pcs/Reel AM4435AM8R AM4435AM8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  VDS = -30V, ID = -10.6A RDS(ON) =14mΩ(Typ.)@VGS = -10V RDS(ON) =18mΩ(Typ.)@VGS = -4.5V  Fast switch  High power and current handling capability  Available in SOP8 Package

APPLICATIONS

 Load Switch  LED Application  DC-DC Power Management P CHANNEL MOSFET Schematic diagram

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 S Source

2 S Source

3 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current TA = 25°C -10.6A TA= 70°C -8.5A IDM, Pulsed Drain CurrentNOTE1 -42.4A IAS, Avalanche CurrentNOTE1, 6 -30A EAS, Single Pulse Avalanche Energy L=0.1mH NOTE1, 6 45mJ PD, Power DissipationNOTE2 TA = 25°C 3.1W TA= 70°C 2.0W TJ, Operation Junction Temperature −55°C ~150°C TSTG, Storage Temperature Range −55°C ~150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Max Unit Thermal Resistance Junction to AmbientNOTE3 t≦10s RθJA °C/W Thermal Resistance Junction to AmbientNOTE3 Steady-State Thermal Resistance Junction to CaseNOTE3 RθJC 27

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA= 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA -1 -1.6 -2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V TJ=25°C - - -1 μA VDS=-24V,VGS=0V TJ=75°C - - -10 Drain-source On-ResistanceNOTE4 RDS(ON) VGS=-10V, ID=-10.6A - 14 18 mΩ VGS=-4.5V, ID=-8A - 18 25 Forward Transconductance Gfs VDS=-10V, ID=-10A - 12.5 - S Diode Characteristics Diode Forward VoltageNOTE2 VSD IS=-1A,VGS=0V - -0.7 -1 V Continuous Source Current IS - - -5.3 A Body Diode Reverse Recovery Time trr IS=-10A, dl/dt=100A/μs - 13.8 - ns Body Diode Reverse Recovery Charge Qrr - 12.3 - nC Dynamic and Switching Parameters Total Gate Charge(10V) Qg VDS=-15V, VGS=-10V, ID=-10A - 36 48.6 nC Total Gate Charge(4.5V) Qg - 18 24.3 Gate-Source Charge Qgs - 8.1 10.9 Gate-Drain Charge Qgd - 10.3 13.9 Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz - 2590 3626 pF Output Capacitance Coss - 283 396 Reverse Transfer Capacitance Crss - 172 241 Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 8.8 13 Ω Turn-On TimeNOTE5 td(on) VDD=-15V, VGEN=-10V, RG=3Ω, ID=-1A - 19.1 - ns tr - 4.8 - Turn-Off TimeNOTE5 td(off) - 58 - tf - 11.5 - NOTE1: The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE2: The TJ(MAX)=150°C, using junction-to-ambient thermal resistance. NOTE3.Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with TA=25°C. NOTE4: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% NOTE5: Pulsed width limited by maximum junction temperature. NOTE6: The EAS data shows Max.

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOP8 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 BSC 0.050 BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM4435A MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2018 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or s ervice without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.