AM4435_V01 AITSEMI

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AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 1 - DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent R DS(ON). These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. The AM4435 is available in SOP8 Package

ORDERING INFORMATION

R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package  -30V/-8.0A, R DS(ON)=16mΩ(typ)@VGS =-10V  -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  Full RoHS compliance  Available in SOP8 Package APPLICATION  Inverter  Synchronous Buck  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter P-CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 S Source

2 S Source

3 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specified VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current (TJ=150℃) V GS = -10V -9A IDM, Pulsed Drain Current -30A IS, Continuous Source Current (Diode Conduction) -2.3A TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ PD, Power Dissipation TA=25oC 2.8W T A=70oC 1.8W Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL INFORMATION Parameter Symbol Min Typ Max Unit Thermal Resistance-Junction to Ambient R θJA 7 0 ℃ / W

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃ Unless otherwise specified Parameter Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS V GS =0V,ID =-250μA -30 - - V Gate Threshold Voltage V GS(th) V DS =VGS,ID =-250μA -1.0 - -2.5 V Gate Leakage Current I GSS V DS =0V,VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current I DSS V DS =-24V,VGS =0V - - -1 µA VDS =-24V,VGS =0V TJ =55°C - - -5 On-State Drain Current I D(ON) V DS ≦ - 5 V , VGS ≦ -4.5V -40 - - A Drain-source On-Resistance R DS(ON) V GS =-10V,ID=-9.0A - 16 21 mΩ VGS =-4.5V, ID=-5.0A - 26 34 Forward Transconductance G fs V DS =-15V,ID =-9.0A - 24 - S Source-Drain Doide Diode Forward Voltage V SD I S=-2.3A,VGS=0V - -0.8 -1.2 V Dynamic Parameters Total Gate Charge Q g VDS =-15V,VGS =-10V ID =-9.0A - 16 24 nC Gate-Source Charge Q GS - 2 . 3 - Gate-Drain Charge Q GD - 4 . 5 - Input Capacitance C iss VDS =-15V,VGS =0V f =1MHz - 1650 - pF Output Capacitance C oss - 350 - Reverse Transfer Capacitance C rss - 235 - Turn-On Time t d(on) VDD =-15V,RL =15Ω ID =-1.0A,VGEN =-10V RG =6Ω - 16 30 nS Tr - 1 7 3 0 Turn-Off Time t d(off) - 65 110 Tf - 3 5 8 0 Note : Pulse test: pulse width <= 300us, duty cycle<= 2%

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 5 - TYPICAL CHARACTERISTICS TA=25℃ Unless Specified 1. Output Characteristics 2. Transfer Characteristics 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. On Resistance VS Gate Source Voltage 11. Thermal Transient Impedance

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 7 -

PACKAGE INFORMATION

Dimension in SOP-8 (Unit: mm) Symbol Min Max A 1.400 1.750 A1 0.100 0.250 A2 1.300 1.500 B 0.330 0.510 C 0.190 0.250 D 4.800 5.300 E 3.700 4.100 e - - H 5.790 6.200 L 0.380 1.270 y - 0.100 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2010 RELEASED – - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circu it product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrat ed circuit products are not de signed, intended, authorized, or warranted to be suitable for use in life support applications, devices or sy stems or other critical applications. Use of AiT products in such applications is understood to be fully at the r i s k o f t h e c u s t o m e r . A s u s e d h e r e i n m a y involve potential risks of death, personal injury, or servere p r o p e r t y , o r e n v i r o n m e n t a l d a m a g e . I n o r d e r t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.