AM3415B AITSEMI

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Technical content

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 1 - DESCRIPTION FEATURES VDS=-20V VGS=±8V ID(A)= -4A RDS(ON)=35mΩ (Typ.) @-4V5 RDS(ON)=45mΩ (Typ.) @-2V5 RDS(ON)=55mΩ (Typ.) @-1V8 RDS(ON)=70mΩ (Typ.) @-1V5 The AM3415B is available in SOT-23S package.

ORDERING INFORMATION

SPQ: 3,000pcs/Reel E3S AM3415BE3SR AM3415BE3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  ESD: 3 kv  Available in SOT-23S package

APPLICATIONS

 Load Switch  Portable Devices  DCDC Conversion P CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±8V ID, Drain CurrentNOTE1 Continuous -4.2A Pulsed -20A PD, Power DissipationNOTE1 500mWNOTE2 850mWNOTE3 TJ, TSTG, Operating and Storage Junction Temperature Range −55°C ~150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of P D is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environmen t with TA =25°C. The current rating is based on the DC thermal resistance rating. NOTE2: Minimum footprint NOTE3: Maximum footprint.

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted, no self-heating. Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V - - -1 μA Gate-Body Leakage IGSS VGS=±8V, VDS=0V - - ±10 μA Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA -0.3 -0.55 -1.0 V Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-4A - 35 55 mΩ VGS=-2.5V, ID=-3A - 45 65 VGS=-1.8V, ID=-2A - 55 87 VGS=-1.5V, ID=-1A - 70 - Forward Transconductance Gfs VDS=-5V, ID=-4A - 16 - S Drain-Source Diode Forward Voltage VSD IS=-2A, VGS=0V -0.5 - -1.2 V Input Capacitance Ciss VDS=-10V, VGS=0V, f=1.0MHz - 418 - pF Output Capacitance Coss - 136 - Reverse Transfer Capacitance Crss - 56 - Total Gate Charge Qg VDS=-10V, ID=-4A, VGS=5V - 9 - nC Gate-Source Charge Qgd - 2.9 - Gate-Drain Qgs - 3.6 - Turn-on Delay Time td(on) VDS=-5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω - - 18 ns Turn-off Delay Time td(off) - - 70

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 4 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Capacitance 4. On Resistance vs. Temperature 5. Gate Threshold vs. Temperature 6. Diode Forward Characteristics

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) Symbol Min. Max. A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 K1 0.400 TYP L 0.45 0.61 M 0.085 0.18 α 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3415B MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2019 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support a pplications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application supp ort. AiT warrants the performance of its products of the specifications applicable at the time of sale.