AM3415A AITSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 9
Technical content
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 1 - DESCRIPTION FEATURES The AM3415A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package.
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired Surface mount package Available in SOT-23 Package APPLICATION PWM application Load switch TYPICAL APPLICATION Schematic diagram
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃unless otherwise noted VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±10V ID, Drain Current-Continuous -4A IDM, Drain Current-Pulsed NOTE1 -30A PD, Maximum Power Dissipation 1.4W TJ,TSTG, Operating Junction and Storage Temperature Range -55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTIC Parameter Symbol MIN MAX Units Thermal Resistance, Junction-to-Ambient NOTE2 RθJA 89.3 ℃/W NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±10 μA On Characteristics NOTE3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.65 -1.0 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4A - 34. 47 mΩ VGS=-2.5V, ID=-4A - 44 60 Forward Transconductance gFS VDS=-5V,ID=-4A 8 - - S Dynamic Characteristics NOTE4 Input Capacitance Clss VDS=-10V,VGS=0V, F=1.0MHz - 950 - PF Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 120 - Switching Characteristics NOTE4 Turn-on Delay Time tD(ON) VDD=-10V, RL=2. 5Ω VGS=-4.5V,RGEN=3Ω - 12 - nS Turn-on Rise Time tR - 10 - Turn-Off Delay Time tD(OFF) - 19 - Turn-Off Fall Time tF - 25 - Total Gate Charge QG VDS=-10V,ID=-4A, VGS=-4.5V - 12 - nC Gate-Source Charge QGS - 1.4 - Gate-Drain Charge QGD - 3.6 - Drain-Source Diode Characteristics Diode Forward Voltage NOTE3 VSD VGS=0V,IS=-1A - - -1.2 V Diode Forward Current NOTE2 IS - - -2.2 A NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec. NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Safe Operation Area 3. Output CHARACTERISTICS 4. Drain-Source On-Resistance 5. Transfer Characteristics 6. Drain-Source On-Resistance
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 6 - 7. RDSON vs. VGS 8. Capacitance vs. VDS 9. Gate Charge 10. Source- Drain Diode Forward 11. Normalized Maximum Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 7 - DETAILED INFORMATION Switching Test Circuit Switching Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) SYMBOL MIN MAX A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950(BSC) e1 1.800 2.000 L 0.300 0.500 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JAN 2014 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, d evices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental da mage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.