AM3407A AITSEMI

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AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. ⚫ Available in SOT-23 package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel AM3407AE3R AM3407AE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch P CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain CurrentNOTE1 TA=25°C -4.3A TA=70°C -3.6A IDM, Pulsed Drain CurrentNOTE2 -20A PD, Power DissipationNOTE1 TA=25°C 1.5W TA=70°C 0.9W TJ, Operation Junction Temperature -55°C ~150°C TSTG, Storage Temperature Range -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Thermal Resistance Junction to AmbientNOTE1 t≦10s RθJA - - 85 °C/W Thermal Resistance Junction to AmbientNOTE1,3 Steady-State - - 120

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA -1 -1.5 -2 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0 TJ=25°C - - -1 μA VDS=-24V, VGS=0 TJ=75°C - - -10 Drain-Source On-ResistanceNOTE4 RDS(ON) VGS=-10V, ID=-4.3A - 38 45 mΩ VGS=-4.5V, ID=-3A - 58 68 Forward Transconductance Gfs VDS =-10V, ID=-4.3A - 11 - S Diode Characteristics Diode Forward VoltageNOTE4 VSD IS=-1A, VGS = 0V - -0.7 -1 V Diode Continuous Forward Current IS - - -4.3 A Dynamic and Switching ParametersNOTE5 Total Gate Charge Qg VDS=-15V, VGS=-10V, ID=-4.3A - 12.3 - nC Total Gate Charge(4.5V) Qg - 6 - Gate-Source Charge Qgs - 2.7 - Gate-Drain Charge Qgd - 3.1 - Input Capacitance Ciss VDS=-25V, VGS=0V, f=1MHz - 645 - pF Output Capacitance Coss - 272 - Reverse Transfer Capacitance Crss - 105 - Turn-On Time td(on) VDD=-15V, VGEN=-10V, RG=3.3Ω, ΙD=-4Α - 9 - ns tr - 16.5 - Turn-Off Time td(off) - 22 - tf - 21 - NOTE1: Surface mounted on FR4 board using 1 in2 pad size. NOTE2: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). NOTE3: Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. NOTE4: Pulse test width ≤300μs and duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 6 - 7. Drain-Source ON Resistance vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP. e1 1.900 TYP. 0.075 TYP. L1 0.250 0.500 0.010 0.022 L 0.550 0.650 0.021 0.039 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3407A MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2021 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconducto r Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before pl acing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other criti cal applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or serve re property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design o r application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.