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AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 1 - DESCRIPTION FEATURES AM3400A is the N -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in- line power loss are needed in small outline surface mount package. The AM3400A is available in SOT-23 package.

ORDERING INFORMATION

SPQ: 3,000pcs/Reel AM3400AE3R AM3400AE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  VDS = 30V, ID = 6.2A RDS(ON) =20mΩ(Typ.)@VGS = 10V RDS(ON) =23mΩ(Typ.)@VGS = 4.5V RDS(ON) =27mΩ(Typ.)@VGS = 2.5V  Fast switch  Low gate drive applications  High power and current handling capability  Available in SOT-23 Package

APPLICATIONS

 Hand-Held Instruments  Load Switch  PWM Applications TYPICAL APPLICATION

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current (VGS=10V) TA = 25°C 6.2A TA= 70°C 5 A IDM, Pulsed Drain CurrentNOTE1 24.8A PD, Power DissipationNOTE2 TA = 25°C 1.5W TA= 70°C 0.9W TJ, Operation Junction Temperature −55°C ~150°C TSTG, Storage Temperature Range −55°C ~150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Max Unit Thermal Resistance Junction to AmbientNOTE3 t≦10s RθJA 85 °C/W Steady-State 120 °C/W

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.4 0.7 1.0 V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V TJ=25°C - - 1 μA VDS=24V,VGS=0V TJ=75°C - - 10 Drain-source On-ResistanceNOTE4 RDS(ON) VGS=10V, ID=6.2A - 20 24 mΩ VGS=4.5V, ID=5A - 23 26 VGS=2.5V, ID=3.6A - 27 32 Forward Transconductance Gfs VDS=10V, ID=3A - 7 - S Source-Drain Diode Diode Forward VoltageNOTE2 VSD IS=1A,VGS=0V - 0.7 1.0 V Continuous Source Current IS - - 2.1 A Dynamic Parameters Total Gate Charge Qg(10V) VDS=15V, VGS=10V, ID=5A - 17 23 nC Total Gate Charge Qg(4.5V) - 8.7 11.7 Gate-Source Charge Qgs - 1.2 1.6 Gate-Drain Charge Qgd - 2 2.7 Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz - 670 938 pF Output Capacitance Coss - 54 76 Reverse Transfer Capacitance Crss - 45 63 Turn-On TimeNOTE5 td(on) VDD=15V, VGEN=10V, RG=3Ω, ID=1A, - 4.2 - ns tr - 14 - Turn-Off TimeNOTE5 td(off) - 22 - tf - 6.6 - NOTE1: The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 150°C (initial temperature TA=25°C). NOTE2: The TJ(MAX)=150°C, using junction-to-ambient thermal resistance. NOTE3: Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with TA=25°C. NOTE4: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% NOTE5: Pulsed width limited by maximum junction temperature.

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 25℃, Unless Note 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate-Source vs. On Resistance 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP 0.037 TYP e1 1.900 TYP 0.075 TYP L1 0.250 0.550 0.010 0.022 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - JUL 2010 RELEASED, MAY 2018 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.