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AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 1 - DESCRIPTION FEATURES The AM2319A, is P -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well Suited for high efficiency fast switching applications The AM2319A is available in SOT-23 packages.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM2319AE3R AM2319AE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Fast Switching 1.8V Low gate drive applications Improved dv/dt capability -20V/-4.2A, RDS(ON)= 35mΩ(Typ) @ VGS= -10V RDS(ON)= 43mΩ(Typ) @ VGS= -4.5V RDS(ON)= 57mΩ(Typ) @ VGS= -2.5V RDS(ON)= 80mΩ(Typ) @ VGS= -1.8V Reliable and Rugged APPLICATION Load Switch DC/DC Converter Hend-Held Instruments P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 2 - PIN DESCRIPTION Pin# Symbol Function
1 G Gate
2 D Drain
3 S Source
SOT-23, E3 Top View
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. VDSS, Drain-Source Voltage -20V ID, Continuous Drain Current A(VGS=4.5V) TA=25℃ -4.2A TA=70℃ -3.4A IDM Pulsed Drain Current (Note1) 16.8A VGSS Gate-to-Source Voltage B ±12V IAS Avalanche Current B 10A EAS Single Pulse Avalanche Energy(Note2) 5mJ PD Power Dissipation A TA=25℃ 1.3W TA=70℃ 0.8W TJ，Tstg Operating Junction and Storage Temperature Range -55 to 150℃ A: Surface mounted on FR4 board using 1 in2 pad size. B: Pulsed width limited by maximum junction temperature, TJ(MAX) =150℃.(initial temperature TJ=25℃). C: Using ≤10s junction-to-ambient thermal resistance is base on TJ(MAX) =150℃. D: Pulse test width ≤300μs and duty cycle ≤2%. E: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted. Static Parameters Parameter Symbol Conditions Min Typ. Max Units Drain to Source Breakdown Voltage BVDSS VGS=0V,ID=250μA -20 V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA -0.5 -0.7 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±12V ±100 μA Zero Gate Voltage Drain Current IDSS VDS =20V,VGS= 0V,Tj = 25℃ -1 μA VDS =16V,VGS= 0V,Tj = 75℃ 10 μA Drain-to-Source On-Resistance D RDS(ON) VGS=10V, ID=4.5A 35 40 mΩ VGS=4.5V, ID=4.2A 43 50 VGS=2.5V, ID=2.5A 57 68 VGS=1.8V, ID=3A 80 95 Forward Transconductance gfs VDS=100V,ID =3A 8 S Diode Characteristics Diode Forward Voltage D VSD IS=-1A, VGS =0V -1 V Diode Continuous Forward Current. IS -1.4 A Dynamic and Switching Parameters E Total Gate Charge Qg VDS =10V , VGS = 4.5V ID =4.2A 7.2 10.1 nC Gate to Source Charge Qgs 1.2 1.7 Gate to Drain(“Miller”)Charge Qgd 3 4.2 Input Capacitance Ciss VDS = 10V, VDS = 0V f = 1.0MHz 650 pF Output Capacitance Coss 95 Reverse Transfer Capacitance Crss 62 Turn-on Time td(ON) VDD = 10V VGEN =-4.5V RG =6Ω ,ID =1A 8.5 16 nS tf 13.3 25 Turn-off Time td(OFF) 32 61 tf 25 48 A: Surface mounted on FR4 board using 1 in2 pad size. B: Pulsed width limited by maximum junction temperature, TJ(MAX) =150℃.(initial temperature TJ=25℃). C: Using ≤10s junction-to-ambient thermal resistance is base on TJ(MAX) =150℃. D: Pulse test width ≤300μs and duty cycle ≤2%. E: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS Fig1 Output Characteristics Fig2 Drain-Source On Resistance Fig3 Gate Charge Fig4 Capacitance Fig5 Gate Threshold Voltage Fig6 Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 6 - Fig7 RDS(ON) vs Junction Temperature Fig8 Drain Current vs TJ Fig9 Maximum Safe Operation Area Fig10 Thermal Transient Impedance Fig11 Gate Charge Waveform Fig12 Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 (Unit: mm) Symbol Millimeters Min Max A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 B 0.300 0.500 C 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950 TYP e1 1.800 2.000 L 0.550 REF L1 0.300 0.500 θ 0 8
AiT Semiconductor Inc. www.ait-ic.com AM2319A MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - OCT 2021 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to veri fy, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems o r other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to m inimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.