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AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 1 - DESCRIPTION FEATURES AM2317A is the P -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in- line power loss are needed in small outline surface mount package. The AM2317A is available in SOT-23S package.

ORDERING INFORMATION

SPQ: 3,000pcs/Reel E3S AM2317AE3SR AM2317AE3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  VDS = -20V, ID = -4.2A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=45mΩ(Typ.)@VGS=-4.5V RDS(ON)=60mΩ(Typ.)@VGS=-2.5V RDS(ON)=80mΩ(Typ.)@VGS=-1.8V  Fast switch  1.8V Low gate drive applications  High power and current handling capability  Available in SOT-23S Package

APPLICATIONS

 Hand-Held Instruments  Load Switch TYPICAL APPLICATION

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current TA = 25°C -4.2A TA= 70°C -3.3A IDM, Pulsed Drain CurrentNOTE1 -16.8A PD, Power DissipationNOTE2 TA = 25°C 1.4W TA= 70°C 0.9W TJ, Operation Junction Temperature −55°C ~ +150°C TSTG, Storage Temperature Range −55°C ~ +150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Min Typ Max Units Thermal Resistance Junction to AmbientNOTE3 t≦10s RθJA - - 90 °C/W Thermal Resistance Junction to AmbientNOTE3 Steady-State - - 120

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250μA -0.5 -0.7 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V, TJ=25°C - - -1 μA VDS=-16V, VGS=0V, TJ=75°C - - -10 Drain-source On-ResistanceNOTE4 RDS(ON) VGS=-10V, IDS=-4.5A - 38 43 mΩ VGS=-4.5V, IDS=-4.2A - 45 50 VGS=-2.5V, IDS=-2.5A - 60 68 VGS=-1.8V, IDS=-2A - 80 95 Forward Transconductance Gfs VDS=-10V, ID=-3A - 5.5 - S Diode Characteristics Diode Forward Voltage NOTE2 VSD IS=-1A, VGS=0V - -0.7 -1 V Continuous Source Current IS - - -2.1 A Dynamic and Switching Parameters Total Gate Charge Qg VDS=-10V, VGS=-4.5V, IDS=-4.2A - 7.6 10.6 nC Gate-Source Charge Qgs - 1.62 2.3 Gate-Drain Charge Qgd - 1.2 1.7 Input Capacitance Ciss VDS=-10V, VGS=0V, f=1MHz - 680 - pF Output Capacitance Coss - 76 - Reverse Transfer Capacitance Crss - 45 - Turn-On TimeNOTE5 td(on) VDD=-10V, VGEN=-4.5V, RG=6Ω, ID=-1A, - 6 11 ns tr - 8.7 17 Turn-Off TimeNOTE5 td(off) - 38 72 tf - 11 21 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: The value of R θJA is measured with the device mounted on 1in2 FR -4 board in a s till air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE3: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. NOTE4: The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%.

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM2317A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUL 2018 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.