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AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM2312 is available in SOT-23S package.

ORDERING INFORMATION

V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistance  Available in SOT-23S Package PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS VDS, Drain-Source Voltage 20V VGS, Gate-Source Voltage ±8V ID, Continuous Drain CurrentNOTE3, VGS @ 4.5V TA=25℃ 4.9A TA=70℃ 3.4A IDM, Pulsed Drain CurrentNOTE1,2 15A PD, Total Power Dissipation TA=25℃ 0.75W Linear Derating Factor 1.3W/℃ TSTG, Storage Temperature Range -55℃ ~ 150℃ TJ, Operating Junction Temperature Range -55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL DATA Parameter Symbol Value Units Max. Thermal Resistance Junction-ambient NOTE3 Rthj-a 140 ℃/W NOTE1: Pulse width limited by Max. junction temperature. NOTE2: Pulse width ≤300us, duty cycle ≤2%. NOTE3: Surface mounted on 1 in2 copper PCB board

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TJ=25℃, unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 V Drain-Source On-State Resistance RDS(ON) VGS = 1.8V, ID = 4.0A 31 57 mΩ VGS = 2.5V, ID = 4.5A 24 47 VGS = 4.5V, ID = 5.0A 21 41 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.4 0.6 1 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ±8V, VDS = 0V ±100 nA Gate Resistance Rg Forward Transconductance gfs VDS = 10V, ID = 5A 40 S Dynamic Total Gate Charge Qg VDS = 10V, ID = 5A VGS = 4.5V 11.2 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 2.2 Turn-On Delay Time td(on) VDD = 10V, ΙD = 1Α, VGEN = 4.5V, RG = 6Ω 15 25 ns Turn-On Rise Time tr 40 60 Turn-Off Delay Time td(off) 48 70 Turn-Off Fall Time tf 31 45 Input Capacitance Ciss VDS = 8V, VGS = 0V f = 1.0 MHz 500 pF Output Capacitance Coss 300 Reverse Transfer Capacitance Crss 140 Source-Drain Diode Max. Diode Forward Current IS 1.7 A Diode Forward Voltage VSD IS = 1.7A, VGS = 0V 1.2 V

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Typical Output Characteristics 2. Typical Output Characteristics 3. On-Resistance vs. Gate Voltage 4. Normalized On-Resistance vs. Junction Temperature 5. Forward Characteristic of Reverse Diode 6. Gate Threshold Voltage vs. Junction Temperature

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 6 - 7. Gate Charge Characteristics 8. Typical Capacitance Characteristics 9. Maximum Safe Operating Area 10. Effective Transient Thermal Impedance 11. Switching Time Circuit 12. Gate Charge Circuit

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.10 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com AM2312 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 8 - IMPORTANT NOTICE AiT Sem iconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or ot her critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.