AM2301B AITSEMI
Document overview
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Technical content
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 1 - DESCRIPTION FEATURES VDS=-20V VGS=±10V ID(A)=-3A RDS(ON)=120mΩ(MAX)@VGS =-4.5V RDS(ON)=150mΩ(MAX)@VGS =-2.5V The AM2301B is available in SOT-23 package Super High dense cell design for extremely low RDS(ON) Reliable and Rugged Available in SOT-23 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel AM2301BE3R AM2301BE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power Management Portable Equipment and Battery Powered Systems. P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±10V ID, Drain Current-Continuous -3A Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maxi mum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -20 - - V Zero-Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA Gate Body Leakage Current, Forward IGSSF VGS=10V, VDS=0V, - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V, VDS=0V, - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS, ID=-250μA -0.4 - -1.0 V Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.0A - - 120 mΩ VGS=-2.5V, ID=-2.0A - - 150 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS=0V, IS=-1.25A - - -1.2 V
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 4 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Breakdown Voltage Variation with Temperature 4. Gate Threshold Variation with Temperature 5. On-Resistance Variation with Temperature 6. On-Resistance vs. Drain Current
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 5 - 7. On-Resistance vs. Gate-to-Source Voltage 8. Source-Drain Diode Forward Voltage
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com AM2301B MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2020 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) re serves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, t hat the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical application s. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.