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AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM2301A is available in SOT-23S package.

ORDERING INFORMATION

V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  ESD Rating of Class 0 (<100V) per Human Body Model PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

TA= 25 VDSS, Drain-to-Source Voltage -20V VGS, Gate-to-Source Voltage ±12V ID, Continuous Drain Current -4.7A IDM, Pulsed Drain CurrentNOTE1 -20A PD, Maximum Power Dissipation TA=25°C 1.1W TA=70°C 0.70W TJ, TSTG, Operation and Storage Temperature Range –55 ~ +150℃ RθJA, Thermal Resistance-Junction to Ambient NOTE2 110℃/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Repetitive Rating: Pulse width limited by the Maximum junction temperature NOTE2: 1-in2 2oz Cu PCB board

AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 3 -

ELECTRICAL CHARACTERISTICS

TA=25℃ Parameter Symbol Conditions Min. Typ. Max. Unit STATIC Drain−to−Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20 - - V Gate Threshold Voltage VGS(th) VGS = VDS, ID=-250uA -0.6 -0.85 -1.4 V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0 - - -1 uA Gate−to−Source Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Drain−to−Source On ResistanceNOTE3 RDS(ON) VGS=-4.5V, ID=-4.7A - 58 70 mΩ VGS=-2.7V, ID=-3.8A - 63 90 VGS=-2.5V, ID=-1A - 75 110 Forward Diode Voltage VSD VGS=0V, ISD=-1.7A - - -1.2 V DYNAMIC Total Gate Charge Qg VGS =-10V,VDS=-4.7V, ID=-4.5A - 24 36 nC Gate−to−Source Gate Charge Qgs - 18 - Gate−to−Drain Charge Qgd - 2.7 - Turn−On Delay Time td(on) VDD=-10V, RL=10Ω, ΙD=−1Α, VGEN=-4.5V, RG=6Ω - 22 35 ns Rise Time tr - 35 55 Turn−Off Delay Time td(off) - 45 70 Fall Time tf - 25 40 Forward Transconductance gFS VDS =-10 V, ID=-4.7A - 8 - S NOTE3: Pulse Test: Pulse width≤300μs, duty cycle ≤2%.

AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 4 - TYPICAL CHARACTERISTICS 1. Transfer Characteristics 2. On-Region Characteristics 3. On-Resistance Versus Drain Current

AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.800 3.040 0.1102 0.1197 B 1.200 1.400 0.0472 0.0551 C 0.890 1.110 0.0350 0.0440 D 0.370 0.500 0.0150 0.0200 G 1.780 2.040 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.350 0.690 0.0140 0.0285 L 0.890 1.020 0.0350 0.0401 S 2.100 2.640 0.0830 0.1039 V 0.450 0.600 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com AM2301A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.1 - NOV 2015 RELEASED, JUN 2016 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or ser vere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.