AM1 ETC

Document overview

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Technical content

WJ Com m unications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • W eb site: ww w.wj.com April 2002 AM1 Product Description The AM1 is a general purpose gain block that offers good dynamic range in a low cost surface mount package. The combination of flat IP3 and noise figure performance over frequency makes it attractive for both narrow and broad- band applications. Superior thermal design allows the product to achieve +37 dBm IP3 per- formance at a mounting temperature of +85°C with an associated MTBF of >100 years 3. All devices are 100% RF and DC tested. Product Features

  • 60-3000 MHz Bandwidth
  • +37 dBm Output IP3
  • 2.4 dB Noise Figure
  • 14 dB Gain
  • +18 dBm P1dB
  • MTBF >100 Years
  • SOT-89 SMT Package
  • Single Bias Supply (+3.3 to +4.5 V) Functional Diagram 123 Function Pin No. Input 1 Ground 2 Output/Bias 3 Ground 4 High Dynamic Range Gain Block Absolute Maximum Ratings Parameter Rating Operating Case T emperature -40 to +85°C Storage T emperature -55 to +125°C DC Voltage +5.5 V Input RF Power (continuous) +7 dBm Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description AM1 High Dynamic Range Amplifier (Available in tape and reel) AM1-PCB Fully Assembled Application Circuit The Communications Edge ™ Specifications Parameter Units Min. Typical Max. Frequency Range MHz 60 3000 S21 - Gain dB 13 14 16 S11 - Input Return Loss dB -9 S22 - Output Return Loss dB -15 Output IP3 dBm +33 +37 Output P1dB dBm +18 Noise Figure dB 2.4 Operating Current Range mA 55 75 100 Supply Voltage V 4.5 Test conditions unless otherwise noted. 1. T = 25°C, Vdd = 4.5 V, Frequency = 800 MHz, 50 Ω system. 2. OIP3 measured with two tones at an output power of 2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule. 3. MTBF calculated with channel temperature at 155˚C. Typical Parameters Parameter Units Typical Frequency MHz 900 1900 S21 dB 13.4 12.2 S11 dB -12.5 -13.2 S22 dB -21.2 -17.8 Output IP3 dBm +37.5 +37.0 Output P1dB dBm +18.1 +18.0 Noise Figure dB 2.4 2.6 Typical specifications reflect AM1 measured on application circuit (AM1-PCB). Actual Size

WJ Com m unications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • W eb site: ww w.wj.com April 2002 AM1 Performance Charts (T = 22°C, unmatched device in a 50 ohm system) 109 108 107 106 105 50 75 100 125 150 175 200 Temperature (°C) MTBF (hours) MTBF vs. Temperature JunctionGround Tab Frequency (MHz) Magnitude (dB) 500 1000 1500 2000 3000 2500 S-Parameters -10 -20 -30 Typical Specifications Frequency 0.9 GHz 1.9 GHz 2.4 GHz Magnitude S21 13.4 dB 12.2 dB 11.5 dB Magnitude S11 -12.5 dB -13.2 dB -11.4 dB Magnitude S22 -21.2 dB -17.8 dB -17.3 dB OIP3 37.0 dBm 37 dBm 37 dBm Noise Figure 2.4 dB 2.6 dB 2.8 dBm Bias Vds = 4.5 V, Id = 75 mA FR4 Board Layout (T = 14 Mils) Schematic S21 S11 S22 AM1 C = 56 pF RF OUTRF IN DC 4.5 V C = 56 pF L = 12 nHL = 10 nH GND C = 56 pF C = 56 pF L = 12 nH C = 56 pF L = 10 nH +4.5 V INPUT OUTPUT C = 56 pF 3 or more Via Grounds req. All Trans. Lines Z = 50 Ohm GND NOTE: The application circuit is designed for wide bandwidth. For narrow band applications, S11 and S21 can be improved with an input shunt microstrip element to ground. 0 500 1000 1500 2000 Frequency (MHz) 2500 3000 3500 4000 0 -10 -15 -20 -25 -30 -35 500 1000 1500 2000 Frequency (MHz) 0 5 10 15 20 Input Power (dBm) 2500 3000 3500 4000 Gain (dB) Gain vs. Frequency Input/Output Return Loss Gain and Output Power vs. Input Power Vds = 4.5 V Id = 65 mA Vds = 4.5 V Id = 65 mA Output Power (dBm) Gain (dB) and Output Power (dBm) Return Loss (dB) Frequency = 1.9 GHz Vds = 4.5 V Id = 69 mA S11 S22 Gain (dB) Thermal Specifications Parameter Rating Operating Case T emperature -40 to +85°C Thermal Resistance (Maximum) 88°C/W Junction T emperature +155°C (Recommended Maximum) Notes: 1. Thermal Resistance determined at Maximum Tab Temperature and Maximum Power Dissipation. 2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours. 3. Refer to WJ Application Note “AM1 Temperature Effects on Reliability”for more information.

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com April 2002 AM1 Application Circuit: 60 - 100 MHz Typical Specifications Frequency 70 MHz Magnitude S21 16.3 dB Magnitude S11 -17.1 dB Magnitude S22 -15.6 dB Noise Figure 5.1 dB Bias Supply 4.5 V @ 75 mA Noise Figure 30 50 70 90 110 130 150 Frequency (MHz) Noise Figure (dB) S-Parameters -20 -15 -10 30 50 70 90 110 130 150 Frequency (MHz) Magnitude (dB) S21 S11 S22 RF IN AM1 PIN 1 PIN 3 PIN 2,4 180 nH .018 µF RF OUT 180 nH VDD = + 4.5 V ID = 75 mA .018 µF .018 µF Schematic 5.6 pF

WJ Com m unications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • W eb site: ww w.wj.com April 2002 AM1 Outline Drawing Land Pattern Mounting Configuration Specifications and information are subject to change without notice. Caution! ESD sensitive device.

WJ Com m unications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • W eb site: ww w.wj.com April 2002 Typical Test Data S-Parameters (Vds = +4.5 V, Ids = 75 mA, T = 22°C, unmatched device in a 50 ohm system) Freq (MHz) S11 (Mag) S11 (Ang) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) AM1