AM0912-080 STMICROELECTRONICS
Document overview
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 90 W MIN. WITH 13 dB GAIN .BANDWIDTH 225 MHz
DESCRIPTION
The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device speci- fically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized ap- plications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0912-080 is housed in the unique AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING 0912-80 ORDER CODE AM0912-080 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤100˚C) 220 W IC Device Current* 7.0 A VCC Collector-Supply Voltage* 50 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.80 °C/W *Applies only to rated RF amplifier operation AM0912-080 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f = 960 — 1215MHz P IN = 13W V CC = 50V 90 100 — W ηcf = 960 — 1215MHz P IN = 13W V CC = 50V 38 44 — % G P f = 960 — 1215MHz P IN = 13W V CC = 50V 8.4 — — dB Note: Pulse Width = 10µSec Duty Cycle = 10% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 40mA I E = 0mA 65 — — V BV EBO IE = 10mA I C = 0mA 3.0 — — V BV CER IC = 40mA R BE = 10Ω 65 — — V ICBO VCB = 50V — — 12 mA hFE VCE = 5V I C = 2A 20 — 120 — DYNAMIC TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1,C2 : 0.3 - 3.5 pF Johanson Capacitors, or Equiv. C3 : 100 pF Chip Capacitor C4,C6 : 1500 pF RF Feedthru C5 : 100 MF, Electrolytic 50V L1,L2 : No. 32 Wire, 4 Turn .062 I.D. RBE : 0 - 1.0 Ohm .120 Ref. Dwg. No. J-313120 AM0912-080
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM0912-080