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TECH NICAL DATA ABS202 ~ ABS210 2017 01 14 1/2Revision No : 0 Bridge Rectifier ■ Features ■ Outline Dimensions and Mark
- Io 2A
- VRRM 200V~1000V
- Glass passivated chip
- High surge forward current capability ■ Applications
- General purpose 1 phase Bridge rectifier applications ABS Dimensions in inches and (millimeters) 177( 4.5) 169( 4.3) .252(6.4) .236(6.0) .161(4.1) .154(3.9) .20(5.1) .193(4.9) .028(0.7) .024(0.6) .010(0.25) .006(0.15) .031(0.8) .012(0.3) .006(0.15) .001(0.02) 0.225(5.72) Mounting Pad Layout ■Limiting Values (Absolute Maximum Rating） Item Symbol U nit Conditions ABS2 02 04 06 08 10 Repetitive Peak Reverse Voltage VRRM V 200 4 00 6 00 8 00 1000 Average Rectified Output Current IO A 60Hz sine wave, R-load,Tc=115℃ On alumina substrate 2.0 Surge(Non- repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 50 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 ■ Electrical Characteristics （Ta=25℃ Unless otherwise specified） Item Symbol U nit Test Condition Max Peak Forward Voltage VFM V IFM=1.0A, Pulse measurement, Rating of per diode 1.0 Peak Reverse Current IRRM uA VRM=VRRM , Pulse measurement, Rating of per diode 热阻 Thermal Resistance RθJ-A ℃/W Between junction and ambient, On alumina substrate 60 RθJ-L Between junction and lead 16 Ta=25℃ Ta=125℃ 500
ABS202 ~ ABS210 2017 01 14 2/2Revision No : 0 10 1001 Peak A)Forward Surage Current ( Number of Cycles F t 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current（ A）Reverse μ T =125J °C T =25J °C C p Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C F . Typ c t Fo Instaneous Forward Current (A) 0.0 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300 μs 1% duty cycle 0.4 0.8 1.2 1.6 2.0 0.0 25 50 75 100 125 150 175 F . Average Rectified Output Current (A) Resistive or Inductive Load 2.4 F o R P 8.3 ms Single Half Sine Wave (JEDEC Method) CaseTemperature (°C) Ratings and Characteristic Curves Al. Substrate PC Board