ABS1502 SAMYANG

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Technical content

FEATURES

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SILICON BRIDGE RECTIFIERS ABS1502 --- ABS1510 VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.5 A SAMYANG ELECTRONICS SAM YANG Limiting Values（Absolute Maximum Rating） Item Symbol U nit Conditions ABS15 02 04 06 08 10 Repetitive Peak Reverse Voltage VRRM V 200 4 00 6 00 8 00 1000 Average Rectified Output Current IO A 60Hz sine wave, R-load,Ta=25℃ On alumina substrate 1.5 Surge(Non- repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 40 Current Squared Time I2t A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 6.6 Storage Temperature Tstg ℃ -55 ~+125 Junction Temperature Tj ℃ -55 ~+150 Electrical Characteristics（T =25℃ Unless otherwise specified） Item Symbol U nit Test Condition Max Peak Forward Voltage VFM V IFM=0.7A, Pulse measurement, Rating of per diode 0.95 Peak Reverse Current IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode 10 Thermal Resistance RθJ-A ℃/W Between junction and ambient, On alumina substrate 62.5 RθJ-L Between junction and lead 25 All d ata sheet.com

www.diode.co.kr RATINGS AND CHARACTERISTIC CURVES ABS1502 --- ABS1510

0.3 Io(A)

Ta(℃) 160 sine w ave R-l oad with heatsink 40 80 120 0.6 0.9 1.2 1.5 1.8 on alumi na substrate 0.01 0.02 0.05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0.5 Ta=25℃ 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150℃ Tj=25℃ FIG4:Typical Reverse Characteristics IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25℃ FIG2:Surge Forward Current CapadilityFIG1:Maximum Forward Current Derating Carve Number of Cycles 0 8.3ms 1cycle IFSM 8.3ms All d ata sheet.com