2SA872 HITACHI

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Technical content

2SA872, 2SA872A Silicon PNP Epitaxial Application

  • Low frequency low noise amplifier
  • Complementary pair with 2SC1775/A Outline 1. Emitter 2. Collector 3. Base TO-92 (1)

2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA872 2SA872A Unit Collector to base voltage V CBO –90 –120 V Collector to emitter voltage V CEO –90 –120 V Emitter to base voltage V EBO –5 –5 V Collector current I C –50 –50 mA Collector power dissipation P C 300 300 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –50 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA872 2SA872A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO –90 — — –120 — — V I C = –1 mA, RBE = ¥ Collector cutoff current ICBO — — –0.5 — — — mAV CB = –75 V, IE = 0 DC current tarnsfer ratio hFE1 *1 250 — 800 250 — 800 V CE = –12 V, IC = –2 mA hFE2 160 — — 160 — — V CE = –12 V, IC = –0.1 mA Base to emitter voltage VBE — — –0.75 — — –0.75 V V CE = –12 V, IC = –2 mA Collector to emitter saturation voltage V IB = –1 mA Gain bandwidth product fT — 120 — — 120 — MHz V CE = –12 V, IC = –2 mA Collector output capacitance Cob — 1.8 — — 1.8 — pF V CB = –25 V, IE = 0, f = 1 MHz Noise figure NF — — 5.0 — — 5.0 dB V CE = –6 V, IC = –50 mA R g = 50 kW f = 10 Hz — — 1.5 — — 1.5 dB f = 1 kHz Note: 1. The 2SA872/A is grouped by hFE1 as follows. DE 250 to 500 400 to 800

2SA872, 2SA872A 100 200 300 Ambient Temperature Ta (°C) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 150 0 –10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics –10 –12 –14 –16 –18–20–22 –2 µA IB = 0 P C = 300 mW –0.01 –0.03 –0.1 –0.3 –1.0 –10 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics VCE = –12 V Ta =100°C 75 50 25 0 –25 400 200 800 600 1,000 Collector Current IC (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current VCE = –12 V Ta = 100°C –25

2SA872, 2SA872A 100 300 1,000 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current VCE = –12 V 0.5 1.0 –1 –3 –10 Collector to Base Voltage VCB (V) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage –30 –100 IE = 0 f = 1 MHz 0.1 0.3 100 –0.01 –0.1 –1.0 Collector Current IC (mA) Signal Source Resistance Rg (kΩ ) Contours of Constant Noise Figure (1) –10 VCE = –6 V f = 10 Hz NF = 1 dB 46810 1.0

2SA872, 2SA872A 0.1 0.3 100 –0.01 –0.1 –1.0 Collector Current IC (mA) Signal Source Resistance Rg (kΩ ) Contours of Constant Noise Figure (2) –10 VCE = –6 V f = 120 Hz NF = 1 dB 810 1.0 0.1 0.3 100 –0.01 –0.1 –1.0 Collector Current IC (mA) Signal Source Resistance Rg (kΩ ) Contours of Constant Noise Figure (3) –10 NF = 1 dB 810 1.0 VCE = –6 V f = 1 kHz

0.60 Max

0.5 – 0.1 5.0 – 0.2 0.7

2.3 Max

12.7 Min 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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