2SA673 HITACHI

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Technical content

2SA673, 2SA673A Silicon PNP Epitaxial Application

  • Low frequency amplifier
  • Complementary pair with 2SC1213 and 2SC1213A Outline 1. Emitter 2. Collector 3. Base TO-92 (1)

2SA673, 2SA673A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA673 2SA673A Unit Collector to base voltage V CBO –35 –50 V Collector to emitter voltage V CEO –35 –50 V Emitter to base voltage V EBO –4 –4 V Collector current I C –500 –500 mA Collector power dissipation P C 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA673 2SA673A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –35 — — –50 — — V I C = –10 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –35 — — –50 — — V I C = –1 mA, RBE = ¥ Emitter to base breakdown voltage V(BR)EBO –4 — — –4 — — V I E = –10 mA, IC = 0 Collector cutoff current ICBO — — –0.5 — — –0.5 mAV CB = –20 V, IE = 0 Collector to emitter saturation voltage IB = –15 mA*2 DC current trnsfer ratio hFE *1 60 — 320 60 — 320 V CE = –3 V, IC = –10 mA DC current trnsfer ratio hFE 10 — — 10 — — V CE = –3 V, IC = –500 mA*2 Base to emitter voltage VBE — –0.64 — — –0.64 — V V CE = –3 V, IC =–10 mA Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows. 2. Pulse test BC D 60 to 120 100 to 200 160 to 320

2SA673, 2SA673A 200 400 600 Ambient Temperature Ta (°C) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 150 0 –20 –40 –60 –80 –100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics (1) IB = 0 –0.1 mA –0.2 –0.4 –0.5 P C = 400 mW –0.6 –0.7 –0.8 –0.9–1.0 –0.3 –100 –200 –300 –400 –500 Collector to Emitter Voltage V CE (V) Collector Current IC (mA) Typical Output Characteristics (2) IB = 0 –1 mA PC = 400 mW –0.3 –1.0 –10 –30 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics Ta = 75 VCE = –3 V 25–25

2SA673, 2SA673A 100 150 Collector Current IC (mA) DC Current Transfer ratio hFE DC Current Transfer Ratio vs. Collector Current VCE = –3 V Ta = –25 120 160 200 240 Collector Current I C (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current VCE = –3 V

0.60 Max

0.5 – 0.1 5.0 – 0.2 0.7

2.3 Max

12.7 Min 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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