HA22032T HITACHI
Document overview
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Technical content
Features
- Suitable for down converter of Micro Wave Application(1.5 GHz)
- Low voltage and low current operation (3V, 9 mA typ.)
- Low noise (2 dB typ. @1.5 Ghz)
- High power gain (26 dB typ. @1.5 GHz)
- Built–in matching circuits (50 W )
- Small surface mount package (TSSOP-8) Outline TTP-8D This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Weekly code(variable) Monthly code(variable) Yearly code(variable) 1 2 3 4 8 7 6 5 Pin No. Pin name Function
1 Vddlo Power supply (Lo)
2 Vddln Power supply (LNA)
3 GND Ground
4 RF in RF input
5 Cs Bypath capacitor (>100 pF)
6 IF out IF output
7 GND Ground
8 Lo in Local input
1.5pF 6.8nH Lo in2.7nH 1.5pF * * 390nH 220nH 5pF Vdd * IF out Vdd *:1000+15pF
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Supply voltage Vdd 5 V Maximum current Idd 15 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +125 °C Operation temperature Topr –20 to +70 °C Maximum input power Pin max +18 dBm Electrical Characteristics (Ta = 25°C, Vdd = 3V) Item Symbol Min Typ Max Unit Test Conditions Quiescent current Idd 5 9 12 mA No signal Power gain PG 23 26 29 dB f = 1489 Mhz, fLo = 1619 Mhz, Plo = –15 dBm, IF = 130 Mhz, Pin = –30dBm Noise figure NF — 2 3 dB f = 1489 Mhz, fLo = 1619 Mhz, Plo = –15 dBm, IF = 130 MHz Typical Performance (Ta = 25°C, Vdd = 3V) Item Symbol Typ Unit Test Conditions VSWR (input) VSWR in 2 — f = 1.489 GHz 3rd order inter-cept point IP3o +4 dBm f = 1.489 GHz, fud =1.490 Ghz, Pin = –30 dBm, fLo = 1.619 Ghz, Plo = –15 dBm
2.5 1.5 Conversion gain,Noise figure vs.Frequency 1400 1600155015001450 Frequency f (MHz) Conversion gain CG (dB) Noise figure NF (dB) NF CG 3rd order inter-cept point(out) vs. Frequency 1400 1600155015001450 Frequency f (MHz) 3rd order inter-cept point IP3o (dBm) Conversion gain,3rd order inter-cept point vs. Input power -55 -20-30-40-45 Frequency f (MHz) Conversion gain CG (dB) -55 -35 -35 3rd order inter-cept point IP3o (dBm) CG IP3o 2.5 1.5 VSWR vs. Frequency 1475 150514901485 Frequency(RF) RF (MHz) VSWR 1480 1495 1500 RF Lo 1605 163516201615 Frequency(Lo) Lo (MHz) 1610 1625 1630 Vdd = 3V f = 1489MHz fLo = 1619MHz PLo = –15dBm Ta = +25°C 2 signals input Vdd = 3V Ta = +25°C Vdd = 3V Pin = –30dBm IF = 130MHz PLo = –15dBm Ta = +25°C 2 signals input Vdd = 3V Pin = –30dBm IF = 130MHz PLo = –15dBm Ta = +25°C
2.5 1.5 VSWR vs. Supply voltage 2 53.53 Supply voltage Vdd (V) VSWR 2.5 4 4.5 RF Lo RF = 1489 MHz Lo = 1619 MHz Ta = +25°C Quiescent current vs. Supply voltage 2 53.53 Supply voltage Vdd (V) Quiescent current Idd (mA) 2.5 4 4.5 Ta = +25°C 3rd order inter-cept point vs. Supply voltage 2 53.53 Supply voltage Vdd (V) 3rd order inter-cept point IP3o (dBm) 2.5 4 4.5 f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15dBm Ta = +25°C 2 signals input Conversion gain,Noise figure vs. Supply voltage 2 53.532.5 4 4.5 2.5 1.5 Noise figure NF (dB) Conversion gain CG (dB) f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm Ta = +25°C CG NF Supply voltage Vdd (V)
Conversion gain,Noise figure vs. Ambient temperature -25 75250 50 2.5 1.5 Noise figure NF (dB) Conversion gain CG (dB) NF Ambient Temperture Ta (°C) Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm CG 3rd order inter-cept point vs. Ambient temperature -25 75250 50 3rd order inter-cept point IP3o (dBm) Ambient Temperature Ta (°C) Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm 2 signals input Quiescent vs. Ambient temperature -25 75250 50 Quiescent current Idd (mA) Ambient temperature Ta (°C) Vdd = 3V2.5 1.5 VSWR vs. Ambient temperature -25 75250 50 VSWR Ambient temperature Ta (°C) Vdd = 3V RF = 1489 MHz Lo = 1619 MHz RF Lo
Conversion gain,Noise figure vs. Local power -50 -5-20-25 -10 2.5 1.5 Noise figure NF (dB) Conversion gain CG (dB) NF Local power PLo (dBm) Vdd = 3V f = 1489 MHz Pin = –30 dBm IF = 130 MHz Ta = +25°C CG -15 3rd order inter-cept point vs. Local power -50 -5-20-25 -10 3rd inter-cept point IP3o (dBm) Local power PLo (dBm) -15 Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz Ta = +25°C 2 signals input
0.50 ± 0.100° – 8° 0.17 ± 0.05 6.40 ± 0.20 0.10
1.10 Max
0.13M 0.65 4.40 3.00
3.30 Max
0.805 Max*
Note: Include Mold Flash 0.22+0.08 –0.07 0.07+0.03 –0.04 Hitachi Code JEDEC EIAJ Weight (reference value) TTP-8D 0.20 ± 0.06 0.15 ± 0.04 1.0 Unit: mm Dimension including the plating thickness Base material dimension
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