A1943N THINKISEMI

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

DESCRIPTION

  • With TO-3PN-SQ package
  • Complement to type C5200N

APPLICATIONS

  • Power amplifier applications
  • Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION Emitter

2 Collector;connected to

THINKI 150 Watt Silicon Epitaxial Planar PNP Power Transistor Pb B C E

3 Base

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/4Rev.12T Parameter Symbol Rating Unit Collector to Base Voltage V CBO -230 V Collector to Emitter Voltage V CEO -230 V Emitter to Base Voltage V EBO -5 V Collector Current - Continuous I C -15 A Peak Collector Current I CP -30 A Base Current I B -1.5 A Collector Power Dissipation P C(TC=25 )℃ 150 W Junction Temperature T j 150 ℃ Storage Temperature Range T stg -55~150 ℃ ℃) Absolute Maximum Ratings(Ta=25 Fig.1 simplified outline(TO-3PN-SQ) and symbol

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/4Rev.12T Parameter Symbol Test Conditions Min Typ Max Unit Collector to Emitter Breakdown V oltage V CEO I C =-50mA I B =0 -230 V Collector Cut-Off Current I CBO V CB =-230V I E =0 -5.0 μA Emitter Cut-Off Current I EBO V EB =-5.0V I C =0 -5.0 μA DC Current Gain h FE(1) V CE =-5.0V I C =-1.0A 55 160 h FE(2) V CE =-5.0V I C =-7.0A 35 60 Collector to Emitter Saturation V oltage V CE(sat) I C =-8.0A I B =-0.8A -1.5 -3.0 V Base to Emitter Voltage V BE V CE =-5.0V I C =-7.0A -1.0 -1.5 V Transition Frequency f T I C =-1.0A V CE =-5.0V 30 MHz Collector output capacitance C ob V CB =-10V I E f=1.0MHz 360 pF Electrical Characteristics(Ta=25 N o t e : ℃, Time:60~90sec. ±5℃, Duration:5±0.5sec. Cooling Speed: 2~10℃/sec. ℃ Time:10±1 sec Temperature Profile for Dip Soldering(Pb-Free) 1.Preheating:25~150 2.Peak Temp.:255 Temp.:270±5 Resistance to Soldering Heat Test Conditions A1943N

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/4Rev.12T Electrical Characteristic Curve A1943N

Package Information

Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.30 1.70 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/4Rev.12T A1943N