9926A KIA
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Technical content
6A，20V DualN-CHANNELMOSFETKIA SEMICONDUCTORS 9926AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n 6A.20V, rDS(on)=0.030 Ω@ VGS=4.5V 2.Symbol 3.Absolutemaximumratings (Ta=25°C,unlessotherwisenoted) Parameter Symbol 10secs Steady sate Units Drain-sourcevoltage VDSS 20 V Gate-sourcevoltage VGS +10 V Continuousdraincurrent TA=25ºC ID 6 A Pulseddraincurrent IDM 30 A Maximumpowerdissipation TA=25ºC PD 2.0 1.25 WTA=70ºC 1.3 0.8 4.Thermalresitanceratings Parameter Symbol Typ Max Units MaximumJunctiontoambient * t≤10sec RthJA 50 62.5 ºC/WSteadystate 80 100 MaximumJunctiontofoot(drain) Steadystate RthJF 30 40 *SurfaceMountedon1\\x1\\FR4Board. 1of4 Rev1.0Dec2015
6A，20V DualN-CHANNELMOSFETKIA SEMICONDUCTORS 9926AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Electricalcharacteristics (Ta=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-Sourcebreakdownvoltage VDSS VGS=0V,I D=250μA 20 - - V Zerogatevoltagedraincurrent IDSS VDS=16V,VGS=0V - - 1 μA - - - Gate-bodyleakage IGSS VDS=0V,VGS=±10v - - ±100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 0.5 - 1.0 V Drain-sourceon-stateresistance* rDS(on) VGS=4.5V,ID=6A - 0.025 0.030 Ω On-statedraincurrent* Id（on） VDS≧5V,VGS=4.5A 20 - - A Forwardtransconductance* gfs VDS=15V,ID=6V - 22 - S Totalgatecharge Qg VDS=15V,VGS=4.5V,ID=6A - 13 20 ncGate-sourcecharge Qgs - 3 - Gate-draincharge Qgd - 3.3 - Turn-ondelaytime td（on） VDD=15V ID=1A,VGS=4.5V,RG=6Ω ,RL=15Ω - 2 35 ns Risetime tr - 40 60 Turn-offdelaytime td(off) - 50 75 Falltime tf - 20 30 Maximumcontinuousdrain-sourcediode forwardcurrent Is - - 1 A Diodeforwardvoltage* VSD IS=1.7A,VGS=0V - 0.7 1.2 V *Pulsetest;pulsewidth ≤300µs,dutycycle ≤2% 2of4 Rev1.0Dec2015
6A，20V DualN-CHANNELMOSFETKIA SEMICONDUCTORS 9926AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Testcircuitsandwaveforms 3of4 Rev1.0Dec2015
6A，20V DualN-CHANNELMOSFETKIA SEMICONDUCTORS 9926AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of4 Rev1.0Dec2015