9120A KIA
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
1.Features n ProprietaryNewPlanarTechnology n RDS(ON)=50m Ω(typ.)@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Application n DC-DCConverters n DC-ACInvertersforUPS n SMPSandMotorcontrols 3. Pinconfiguration 1of8 Rev1.0MAR2017 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
- OrderingInformation PartNumber Package Brand KNP9120A TO-220 KIA 5. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage [1] VDSS 200 V Gate-sourcevoltage VGSS ±20 V ContinuousDrainCurrent ID 40 A ContinuousDrainCurrent@Tc=100ºC ID@ TC=100ºC Figure3 A PulsedDrainCurrentatV GS=10V[2] IDM Figure6 A Avalancheenergy Singlepulse EAS 1200 mJ PeakDiodeRecoverydv/dt [3] dv/dt[3] 5.0 V/ns PowerDissipation PD 125 W DeratingFactorabove25ºC 1.0 W/ºC MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)formCasefor10 Seconds TL TPAK 300 260 ºC Storagetemperature TSTG -55~+150 ºC Caution:Stressesgreaterthanthoselistedinthe“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. 6. ThermalCharacteristics Symbol Parameter Rating Unit RθJC ThermalResistance,Junction-to-Case 1.0 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 2of8 Rev1.0MAR2017
- Electricalcharacteristics Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics (TJ=25°C,unlessotherwisespecified) Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 200 - - V Drain-to-SourceLeakageCurrent IDSS VDS=200V,V GS=0V - - 1 μA VDS=160V,V GS=0V TJ=125ºC - - 100 μA Gate-to-sourceLeakageCurrent IGSS VGS=+20V,V DS=0V - - +100 nA VGS=-20V,V DS=0V - - -100 nA Oncharacteristics (TJ=25°C,unlessotherwisespecified) Gatethresholdvoltage VGS(TH) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(ON) VgS=10V,ID=20A - 50 65 mΩ ForwardTransconductance [4] GFS VDS=15V,ID=20A - 65 - S Dynamiccharacteristics (Essentiallyindependentofoperatingtemperature) Inputcapacitance CISS VDS=25V,VGS=0V, f=1.0MHz - 2800 3700 pF Outputcapacitance COSS - 305 400 pF Reversetransfercapacitance CRSS - 110 150 pF Turn-ondelaytime tD(ON) VDD=100V,ID=20A, RG=3.9Ω,VGS=10V - 20 - ns Risetime tR - 30 - ns Turn-offdelaytime tD(OFF) - 65 - ns Falltime tF - 25 - ns Switchingcharacteristics (Essentiallyindependentofoperatingtemperature) Totalgatecharge QG VDD=100V, ID=20A VGS=0to10V - 97 120 nC Gate-sourcecharge QGS - 14 - nC Gate-draincharge QGD - 39 - nC Switchingcharacteristics (TJ=25°C,unlessotherwisespecified) Drain-sourcediodeforwardvoltage VSD VGS=0V,I S=40A - - 1.5 V Continuousdrain-sourcecurrent [4] ISD IntegralPN-diodein MOSFET - - 40 A Pulseddrain-sourcecurrent [4] ISM - - 160 A Reverserecoverytime trr VGS=0V,IF=20A diF/dt=100A/μs - 280 - ns Reverserecoverycharge Qrr - 420 - μC NOTE:[1]TJ=+25ºCto+150ºC; [2]Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature; [3]ISD=20Adi/dt<100A/ μs,VDD<BVDSS,TJ=+150ºC; [4]Pulsewidth ≤380μs;dutycycle ≤2%. 3of8 Rev1.0MAR2017
8.Testcircuitsandwaveforms 4of8 Rev1.0MAR2017
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