8N80 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc N-Channel Mosfet Transistor 8 N 8 0
- FEATURES
- Drain Current –ID= 8A@ TC=25℃
- Drain Source Voltage- : V DSS=800V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 1.55Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- DESCRITION
- Designed for high efficiency switch mode power supply.
- ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 178 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc N-Channel Mosfet Transistor 8 N 8 0
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS= 0; ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage V DS= VGS; ID= 0.25mA 3.0 5.0 V RDS(on) Drain-Source On-Resistance V GS= 10V; ID= 4A 1.55 Ω IGSS Gate-Body Leakage Current V GS= ±30V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current V DS= 800V; VGS= 0 10 μA VSD Forward On-Voltage I S= 8A; VGS= 0 1.4 V