8N60H KIA

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Technical content

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA8N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics. ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersupplies,PWMmotor controls,highefficientDCtoDCconvertersandbridgecircuits. 2.Features n RDS(on)=0.98Ω@ VGS=10V n Ultra low gate charge (typical 29nC) n Fast switching capability n Avalanche energy tested n Improved dv/dt capability, 3. Pinconfiguration 1of6 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Parameter Symbol Rating Units TO220 TO220F Drain-sourcevoltage VDSS 600 V Gate-sourcevoltage VGSS ±30 V Draincurrentcontinuous TC=25ºC ID 7.5 7.5* A TC=100ºC 4.6 4.6* A Draincurrentpulsed(note1) IDP 30 30* A Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 147 48 W Derateabove25 ºC 1.18 0.38 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature 5. Thermaldata Parameter Symbol Rating Unit TO220 TO220F Thermalresistancejunction-ambient RthJA 62.5 ºC/W Thermalresistance,case-to-SinkTyp RthCS 0.5 -- ºC/W Thermalresistancejunction-case RthJC 0.85 2.6 ºC/W 2of6 Rev1.1JAN2014

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol TestConditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 600 - - V Zerogatevoltagedraincurrent IDSS VDS=600V,VGS=0V - - 1 μA VDS=480V,TC=125ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperature coefficient △BVDSS/△TJ ID=250μA - 0.6 - V/ ºC Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=VGS,ID=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(ON) VDS=10V,ID=3.75A(Note4) - 0.98 1.2 Ω Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V,f=1MHZ - 100 0 - pF Outputcapacitance COSS - 110 - pF Reversetransfercapacitance CRSS - 12 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=300V,RG=25Ω, ID=7.5A (note4,5) - 20 - ns Risetime tR - 50 - ns Turn-offdelaytime tD(OFF) - 80 - ns Falltime tF - 70 - ns Totalgatecharge QG VDS=480V,VGS=10V ID=7.5A (note4,5) - 29 - nC Gate-sourcecharge QGS - 4.7 - nC Gate-draincharge QGD - 12.5 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=7.5A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 7.5 A Pulseddrain-sourcecurrent ISM - - 30 A Reverserecoverytime tRR ISD=7.5A, di/dt=100A/μA(note4) - 350 - ns Reverserecoverycharge QRR - 3.3 - μC Note:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 2.L=7.3mH,I AS=7.5A,VDD=50V,RG=25Ω,StartingT J=25ºC 3.I SD<7.5A,di/dt<200A/μs,V DD< BVDSS,StartingT J=25ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature. 3of6 Rev1.1JAN2014

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of6 Rev1.1JAN2014

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.1JAN2014

7.5A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 8N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.1JAN2014