8N60 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc N-Channel Mosfet Transistor 8N60
- FEATURES
- Drain Current –ID= 7.5A@ TC=25℃
- Drain Source Voltage- : V DSS= 600V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 1.2Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- DESCRITION
- Designed for high efficiency switch mode power supply.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 147 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.85 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc N-Channel Mosfet Transistor 8N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.75A 1.2 Ω IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 μA VSD Forward On-Voltage IS= 7.5A; VGS= 0 1.4 V