85HF VISHAY
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Technical content
Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-May-09 1 Standard Recovery Diodes, (Stud Version), 85 A 85HF(R) Series Vishay Semiconductors
FEATURES
- High surge current capability Stud cathode and stud anode version Leaded version available Types up to 1600 V V RRM Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level TYPICAL APPLICATIONS Battery chargers Converters Power supplies Machine tool controls Welding ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IF(AV) 85 A DO-203AB (DO-5) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 85HF(R) UNITS
10 TO 120 140/160
IF(AV) 85 A TC 140 110 °C IF(RMS) 133 A IFSM
50 Hz 1700
A
60 Hz 1800
50 Hz 14 500
60 Hz 13 500
VRRM Range 100 to 1200 1400/1600 V TJ - 65 to 180 - 65 to 150 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 85HF(R) 10 100 200 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 4.5 160 1600 1700
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93529
2 Revision: 25-May-09
85HF(R) Series Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 85 A Notes (1) Available only for 88HF (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS 10 to 120 140/160 Maximum average forward current at case temperature I F(AV) 180° conduction, half sine wave 85 A 140 110 °C Maximum RMS forward current I F(RMS) 133 A Maximum peak, one-cycle forward, non-repetitive surge current I FSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial T J = TJ maximum 1700 A t = 8.3 ms 1800 t = 10 ms 100 % V RRM reapplied 1450 t = 8.3 ms 1500 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 14 500 A t = 8.3 ms 13 500 t = 10 ms 100 % V RRM reapplied 10 500 t = 8.3 ms 9400 Maximum I2t for fusing I 2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s Value of threshold voltage (up to 1200 V) V F(TO) TJ = TJ maximum 0.68 VValue of threshold voltage (for 1400 V, 1600 V) 0.69 Value of forward slope resistance (up to 1200 V) r f TJ = TJ maximum 1.62 Value of forward slope resistance (for 1400 V, 1600 V) 1.75 Maximum forward voltage drop V FM Ipk = 267 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.2 1.4 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS 10 to 120 140/160 Maximum junction operating and storage temperature range T J, TStg - 65 to 180 - 65 to 150 °C Maximum thermal resistance, junction to case R thJC DC operation 0.35 K/W Maximum thermal resistance, case to heatsink R thCS Mounting surface, smooth, flat and greased 0.25 Maximum shock (1) 1500 gMaximum constant vibration (1) 50 Hz 20 Maximum constant acceleration (1) Stud outwards 5000 Maximum allowable mounting torque (+ 0 %, - 10 %) Not lubricated thread, tighting on nut (2) 3.4 (30) N · m (lbf · in) Lubricated thread, tighting on nut (2) 2.3 (20) Not lubricated thread, tighting on hexagon (3) 4.2 (37) Lubricated thread, tighting on hexagon (3) 3.2 (28) Approximate weight Unleaded device 17 g 0.6 oz. Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-May-09 3 85HF(R) Series Standard Recovery Diodes, (Stud Version), 85 A Vishay Semiconductors Note The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECT ANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.10 0.08 TJ = TJ maximum K/W 120° 0.11 0.11 90° 0.13 0.13 60° 0.17 0.17 30° 0.26 0.26 )A( tnerruC drawroF egarevA Maximum Allowable Case Temperature (°C)130 140 150 160 170 180 0 1 02 03 04 05 06 07 0 80 90 100 30° 60° 90° 120° 180°a Conduction Angle 85HF(R) Series (100V to 1200V) RthJC (DC) = 0.35 K/W )A( tnerruC drawroF egarevA Maximum Allowable Case Temperature (°C)130 140 150 160 170 180 02 0 4 0 6 0 80 100 120 140 DC 30° 60° 90° 120° 180° Conduction Period 85HF(R) Series (100V to 1200V) RthJC (DC) = 0.35 K/W Average Forward Current (A) Maximum Allowable Case Temperature (°C)100 110 120 130 140 150 0 1 02 03 04 05 06 07 0 80 90 100 30° 60° 90° 120° 180° Conduction Angle 85HF(R) Series (1400V to 1600V) RthJC (DC) = 0.35 K/W Average Forward Current (A) Maximum Allowable Case Temperature (°C)100 110 120 130 140 150 02 0 4 0 6 0 80 100 120 140 DC 30° 60° 90° 120° 180° Conduction Period 85HF(R) Series (1400V to 1600V) RthJC (DC) = 0.35 K/W
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93529
4 Revision: 25-May-09
85HF(R) Series Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 85 A Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) RMS Limit Conduction Angle 180° 120° 90° 60° 30° 85HF(R) Series (100V to 1200V) Tj = 180˚C 02 0 4 0 6 0 80 100 120 140 160 180 1 K/ W1.5 K/ W2 K/ W
3 K/W
5 K/W
10 K/W
0.7 K/W RthSA = 0.5 K/ W - Delta R 01 0 2 0 3 0 4 0 5 0 6 0 7 0 809 0 Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) 02 0 4 0 6 0 80 100 120 140 160 180 W 1 K/ W 0.7 K/ W 1.5 K/ W RthSA = 0.5 K/ W - Delta R 100 120 0 2 04 06 0 80 100 120 140 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 85HF(R) Series (100V to 1200V) Tj = 180˚C Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) 0 25 50 75 100 125 150 1.5 K/ W 2 K/ W W 0.7 K/ W RthSA = 0 .5 K/ W - Delt a R 100 0 1 02 03 04 05 06 07 0 809 0 RMS Limit Conduction Angle 180° 120° 90° 60° 30° 85HF(R) Series (1400V, 1600V) Tj = 150˚C
Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-May-09 5 85HF(R) Series Standard Recovery Diodes, (Stud Version), 85 A Vishay Semiconductors Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Forward Voltage Drop Characteristics (up to 1200 V) Fig. 12 - Forward Voltage Drop Characteristics (for 1400 V, 1600 V) Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) 0 25 50 75 100 125 150 1.5 K/ W
2 K/W
0.7 K/ W 1 K/ W RthSA = 0.5 K/ W - Delta R 100 120 140 0 2 04 06 0 80 100 120 140 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 85HF(R) Series (1400V, 1600V) Tj = 150˚C Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current (A) 400 600 800 1000 1200 1400 1600 11 0 1 0 0 85HF(R) Series Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Pulse Train Duration (s) Peak Half Sine Wave Forward Current (A) 200 400 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 Maximum Non Repetitive Surge Current 85HF(R) Series Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied Versus Pulse Train Duration. Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 100 1000 10000 012345 6 Tj = 25°C Tj = Tj Max. 85HF(R) Series up to 1200V 100 1000 00 . 511 . 522 . 5 Tj = 25°C Tj = Tj Max. 88HF (R) Series Instantaneous Forward Voltage (V) Instantaneous Forward Current (A)
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6 Revision: 25-May-09
85HF(R) Series Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 85 A Fig. 13 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Square Wave Pulse Duration (s) Transient Thermal Impedance Z thJC (K/W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 85HF(R) Series Steady State Value RthJC = 0.35 K/W (DC Operation) 1 - 85 = Standard device 86 = Not isolated lead 87 = Isolated lead with silicone sleeve (red = Reverse polarity) (blue = Normal polarity) 88 = Type for rotating application 2 - HF = Standard diode 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code x 10 = V RRM (see Voltage Ratings table) 5 - None = Stud base DO-203AB (DO-5) 1/4 " 28UNF-2A M = Stud base DO-203AB (DO-5) M6 x 1 (not available for 88HF) Device code 513 24
85 HF R 160 M
LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95342
Document Number: 95342 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 29-Sep-08 1 DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series Outline Dimensions Vishay Semiconductors DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches) 1/4" 28UNF-2A for metric devices: M6 x 1 Ø 15.1 (0.59) 6.1/7 (0.24/0.27) 10.8 (0.42) 11.4 (0.45) 4 (0.16) MIN. 4 (0.16) 25.4 (1) MAX. 11.1 ± 0.4 (0.44 ± 0.02)
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95342
2 Revision: 29-Sep-08
Vishay Semiconductors DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches) 12.2 (0.48) MAX. Ø 7 (0.28) MAX. 134.4 (5.29) MAX. 123 (4.84) MAX.
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