8550SS ETC
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ）
FEATURES
P CM : 1W （Tamb=25℃） Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO : - 40V Operating and storage junction temperature range T J，Tstg: -55℃ to +150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 μA ， IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 ΜA hFE（1） VCE= -1V , IC=-100 mA 85 300 DC current gain hFE（2） VCE=-1V , IC=-800 mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800 m,IB=-80 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA,IB=-80 mA -1.2 V Transition frequency f T VCE=-10 V, IC=-50mA f =30 MHz
100 MHz
CLASSIFICATION OF hFE(1) Rank B C D Range 85-160 120-200 160-300 1 2 3 TO—92 1.EMITTER 2. CO LLECTOR 3. BASE
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP1.270TYP φ