840U KIA

Document overview

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Technical content

1.Features n RDS(ON),typ.=0.8Ω@VGS=10V,ID=4A n FastSwitching n 100%avalanchetested n Improveddv/dtcapability 2.Application n DCMotorControlandClassDAmplifier n UninterruptiblePowerSupply(UPS) n Automotive 3. Pinconfiguration 1of7 Rev1.0JUN2017 Pin Function

1 Gate

2 Drain

3 Source

  1. OrderingInformation PartNumber Package Brand KND840U TO-252 KIA 5. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Parameter Symbol Rating UnitsTO252 Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS ±30 V ContinuousDrainCurrent TC=25ºC ID 8* A TC=100ºC 4.61* A PulsedDrainCurrent note1 IDM 28* A SinglePulseAvalancheEnergy note2 EAS 180 mJ PowerDissipation TC=25ºC PD 84 W LinearDeratingFactor TC >25ºC 0.66 W/ºC ThermalResistance,JunctiontoCase RθJC 1.5 ºC/W OperatingandStorageTemperatureRange TL,TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature 2of7 Rev1.0JUN2017
  1. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-source breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 500 - - V Breakdownvoltagetemperature coefficient △V(BR)DSS /△TJ ID=250μA, referencedto25°C - 0.5 - V/°C ZeroGageVoltageDrainSource IDSS VDS=500VGS=0V - - 1 μA VDS=400T C=125ºC - - 10 μA GatetoBodyLeakageCurrent IGSS VGS=+30V,V DS=0V - - 100 nA VGS=-30V,V DS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage note4 VGS(TH) VDS=VGS,I D=250μA 2 - 4 V Static drain-source on-resistance RDS(ON) VGS=10V,ID=4.0A - 0.8 0.9 Ω ForwardTransconductance GFS VDS=30V,ID=3.5A - 3.0 - S Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V, f=1.0MHz - 831 - pF Outputcapacitance COSS - 80.7 - pF Reversetransfercapacitance CRSS - 3.81 - pF Totalgatecharge QG VDD=400 ID=7A VGS=10V - 17.8 - nC Gate-sourcecharge QGS - 3.9 - nC Gate-draincharge QGD - 5.5 - nC Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=250V,ID=7A, RG=10Ω,VGS=10V - 13.1 - ns Risetime tR - 21.0 - ns Turn-offdelaytime tD(OFF) - 23.7 - ns Falltime tF - 10.3 - ns Switchingcharacteristics Continuousdrain-sourcecurrent IS - - 8 A Pulseddrain-sourcecurrent ISM - - 28 A Drain-source diode forward voltage VSD VGS=0V,I S=7A - - 1.4 V Reverserecoverytime tRR VGS=0V,IF=4A dI/dt=100A/μs - 283 - ns Reverserecoverycharge QRR - 1.2 - μC Note:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature. 2.L=10mH,IAS=6A,VDD=50V,RG=25Ω,StartingT J=25°C. 3.ISD≤8A,di/dt≤200A/μs,VDD≤BVDSS,StartingT J=25°C. 4.Pulsewidth ≤300μs;dutycycle ≤2% 3of7 Rev1.0JUN2017
  1. TypicalCharacteristics 4of7 Rev1.0JUN2017

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