840S KIA
Document overview
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Technical content
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON)=0.7Ω(typ) @VGS=10V n RoHS compliant n Low on resistance n Low gate charge n Peak current vs pulse width curve 2.Applications n Adaptor n TVmainpower n SMPSpowersupply n LCDpanelpower 3.Symbol 1of6 Rev1.2JAN2016 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25°C,unlessotherwisespecified) Parameter Symbol Rating Units TO-220 TO-252, TO-263 Drain-sourcevoltage VDSS 500 V Continuousdraincurrent ID 8.0 A ContinuousdraincurrentT C=100 ºC 5.5 A Pulseddraincurrent IDMa1 28 A Powerdissipation PD 160 100 W Deratingfactorabove25 ℃ 1.28 0.8 W/ ºC Gate-sourcevoltage VGS +20 V Singlepulseavalancheenergy EASa2 400 mJ Avalancheenergy,repetitive EARa1 30 mJ Avalanchecurrent IAR a1 7.0 A Peakdioderecoverydv/dt dv/dt a3 5.5 V/ns Gate-sourceESD(HBM-C=100pF,R=1.5K Ω) VESD(G-S) 4000 V Operatingjunctionandstoragetemperature range TJ ,TSTG 150,-55to150 ºC Maximumtemperatureforsoldering TL 300 ºC *Draincurrentlimitedbymaximumjunctiontemperature Caution：Stressesgreaterthanthoselistedinthe ”Absolutemaximumratings ”tablemaycausepermanent Damagetothedevice 5. Thermalcharacteristics Parameter Symbol Rating Unit Testcondition Junction-case RθJC 1.04 ºC/W Drainleadsolderedtowatercooledheatsink,P D adjustedforapeakjunctiontemperatureof+150 ºC Junction-ambient RθJA 100 ºC/W 1cubicfootchamber,freeair 2of6 Rev1.2JAN2016
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisespecified) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Bvdsstemperaturecoefficient △BVDSS/△TJ Reference25 ℃ ID=250uA - 0.74 - V/ºC Drain-sourceleakagecurrent IDSS VDS=500V,V GS=0V TA=25°C - - 25 μAVDS=400V,V GS=0V TA=125°C - - 250 Gatesourcebreakdownvoltage VGSO IGS=+1mA (opendrain) +20 - - V Gate-sourceforwardleakage IGSS(F) VGS=20V - - 10 uAGate-sourcereverseleakage IGSS(R) VGS=-20V - - -10 Drain-sourceon-resistance RDS(on) VGS=10V,ID=4A - 0.7 0.9 Ω Gatethresholdvoltage VGS(TH) VDS=V GS,I D=250uA 2 3 4 V Pulsewidthtp< 380μs, δ<2% Forwardtransconductance gfs VDS=15V,I D=3A - 8.5 - S Inputcapacitance Ciss VDS=25V,VGS=0V f=1MHz - 960 - pFOutputcapacitance Coss - 110 - Reversetransfercapacitance Crss - 10 - Turn-ondelaytime td(on) VDD=250V,I D=8A, RG=12Ω,VGS=10V - 11 - nsRisetime tr - 17 - Turn-offdelaytime td(off) - 46 - Falltime tf - 22 - Totalgatecharge Qg VDD=250V,I D=8A, VGS=10V - 24 - nCGate-sourcecharge Qgs - 4.0 - Gate-draincharge Qgd - 10 - Continuoussourcecurrent （bodybiode ） IS - - 8 AMaximumpulsedcurrent （bodybiode ） ISM - - 32 Diodeforwardvoltage VSD IS=8A,V GS=0V - - 1.5 V Reverserecoverytime trr IS=8A,V GS=0V dIF/dt=100A/μs TJ=25ºC - 175 - ns Reverserecoverycharge Qrr - 0.75 - nC Reverserecoverycurrent IRRM - 8.57 - A Pulsewidthtp< 380μs, δ<2% Note:a1.Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature a2.L=10.0mH,StartT J=25ºC. a3.I SD=8Adi/dt< 100A/μs,VDD< BVDS,StartT J=25ºC. 3of6 Rev1.2JAN2016
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of6 Rev1.2JAN2016
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.2JAN2016
8A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.2JAN2016