840H KIA

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9Amps，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA840HN-ChannelenhancementmodesilicongateMOSFETisdesignedforhighvoltage,high speedpowerswitchingapplicationssuchasswitchingregulators,switchingsolenoid,motordrivers,relay drivers. 2.Features n RDS(on)=0.65 Ω@VGS=10V n Lowgatecharge(typical30nC) n Fastswitchingcapability n Avalancheenergyspecified n Improveddv/dtcapability 3. Pinconfiguration 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

9Amps，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 500 V Draincurrent Tc=25 ºC ID 9.0 A Tc=100 ºC 5.4 A Draincurrentpulsed (note1) IDP 36 A Gate-sourcevoltage VGSS ±30 V Singlepulsedavalancheenergy (note2) EAS 360 mJ Repetitiveavalancheenergy (note1) EAR 13.5 mJ Peakdioderecoverydv/dt (note3) dv/dt 4.5 V/ns Powerdissipation Tc=25 ºC PD 135 W derateabove25 ºC 1.07 W/ºC Junctiontempercture TJ +150 ºC Storagetemperature TSTG -55~+150 ºC 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case RtnJC 0.93 ºC/W Thermalresistance,case-to-sinktyp. RthCS 0.5 ºC/W Thermalresistance,Junction-to-ambient RthJA 62.5 ºC/W 2of5 Rev1.1JAN2014

9Amps，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 V Breakdownvoltagetemperature coefficient ΔBVDSS/ΔTJ ID=250μA, 0.57 V/º C Zerogatevoltagedraincurrent IDSS VDS=500V,V GS=0V 1 μA VDS=400V,T C=125 ºC 10 μA Gate-bodyleakage current Forward IGSS VGS=30V,VDS=0V 100 nA Reverse VGS=-30V,VDS=0V -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=4.5A 0.65 0.80 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V f=1.0MHz 790 1030 pF Outputcapacitance Coss 130 170 pF Reversetransfercapacitance Crss 24 30 pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=250V,ID=9.0A, RG=25Ω(note4,5) 20 45 ns Turn-onrisetime tr 65 140 ns Turn-offdelaytime td(off) 93 195 ns Turn-offfalltime tf 64 125 ns Totalgatecharge Qg VDS=400V,I D=9.0A, VGS=10V(note4,5) 28 35 nC Gate-sourcecharge Qgs 4 - nC Gate-draincharge Qgd 15 - nC Drain-sourcediodecharacteristicsandmaximumrating Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=9.0A 1.4 V ContinuousDrain-sourcecurrent ISD 9.0 A PulsedDrain-sourcecurrent ISM 36.0 A Reverserecoverytime trr IS=9.0A, dISD/dt=100A/μs(note4) 335 ns Reverserecoverycharge Qrr 2.95 μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctio/ntemperature 2.L=8mH,IAS=9.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.ISD<9.0A,di/dt<200A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1JAN2014

9Amps，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014

9Amps，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 840HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014