830H KIA
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=1.0Ω n RoHS compliant n Low on resistance n Low gate charge n Peak current vs pulse width curve 2.Applications n Adaptor n Charger n SMPSstandbypower 3.Symbol 1of8 Rev1.1JAN2014 Pin Function
1 Gate
2 Drain
3 Source
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage （note*1） VDSS 500 V Continuousdraincurrent ID 5.0* A ID@100℃ Figure3 A Pulseddraincurrent ，VGS@10V （note*2） IDM Figure6 A Powerdissipation PD 100 W Deratingfactorabove25 ℃ 0.8 W/℃ Gate-sourcevoltage VGS +20 V Pulseavalancherating IAS Figure8 A Peakdioderecoverydv/dt （note*3） dv/dt 5.0 V/ns Maximumtemperatureforsoldering Leadsat0.063in （1.6mm ）fromcasefor10 secondspackagebodyfor10seconds TL TPKG 300 260 ºC Operatingjunctionandstoragetemperature range TJ ,TSTG -55to150 ºC *Draincurrentlimitedbymaximumjunctiontemperature Caution：Stressesgreaterthanthoselistedinthe ”Absolutemaximumratings ”tablemaycausepermanent Damagetothedevice 5. Thermalcharacteristics Parameter Symbol Rating Unit Testcondition Junction-ambient RθJA 100 ºC/W 1cubicfootchamber,freeair Junction-case RθJC 1.25 ºC/W Drainleadsolderedtowatercooledheatsink,P D adjustedforapeakjunctiontemperatureof+150 ℃ 2of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 500 - - V Breakdownvoltagetemperaturecoeffcient ， Figure11 △BVDSS/△TJ Referenceto25 ℃ ID=250uA
0.61 V/℃
Drain-sourceleakagecurrent IDSS VDS=500V,V GS=0V - - 1 μAVDS=400V,V GS=0V TJ=125°C - - 100 Gatethresholdvoltage,Figure12 VGS(th) VDS=VGS,I D=250μA 2 - 4 V Gate-sourceforwardleakage IGSS VGS=20V - - 1 uA Gate-sourcereverseleakage VGS=-20V - - -1 Staticdrain-sourceon-resistance Figure9and10 RDS(on) VGS=10V,ID=2.5A （note*4） - 1 1.5 Ω Forwardtransconductance gfs VDS=15V,I D=2.5A （note*4） - 6 - S Inputcapacitance Ciss VDS=25V,VGS=0V f=1MHz Figure14 - 730 - pFOutputcapacitance Coss - 80 - Reversetransfercapacitance Crss - 8.0 - Turn-ondelaytime td(on) VDD=250V,I D=5A, RG=12Ω,VGS=10V - 13 - ns Risetime tr - 15 - Turn-offdelaytime td(off) - 40 - Falltime tf - 20 - Totalgatecharge Qg VDD=250V,I D=5A, Figure15 - 20 - nCGate-sourcecharge Qgs - 3.0 - Gate-draincharge Qgd - 8.0 - Continuoussourcecurrent （bodybiode ） IS Integralpn-diodein MOSFET - - 5 A Maximumpulsedcurrent （bodybiode ） ISM - - 20 Diodeforwardvoltage VSD IS=5A,V GS=0V - - 1.5 V Reverserecoverytime trr IF=5A,V GS=0V di/dt=100A/μs - 280 - nS Reverserecoverycharge Qrr - 1200 - nC Note:1.TJ=25℃ to150 ℃. 2.Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature 3.ISD=5Adi/dt< 100A/μs,VDD< BVDSS,TJ=150℃. 4.pulsewidt< 380us;dutycycle< 2%. 3of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.1JAN2014
5A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.1JAN2014