8205A KIA

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Technical content

1.Features n RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ n RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ n RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ n RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ n RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ n Advanced trench process technology n High Density Cell Design For Ultra Low On-Resistance n High Power and Current handing capability n Ideal for Li ion battery pack applications 2.Pininformation 3.MaximumRatingsandThermalCharacteristics (TA =25 ℃ unlessotherwisenoted) Parameter Symbol Limit Umit Drain-SourceVoltage VDS 20 V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent 1 ID 5 A PulsedDrainCurrent 2 IDM 20 MaximumPowerDissipation TA=25 ℃ PD W TA=75 ℃ 1.28 OperatingJunctionandStorageTemperatureRange Tj1 Tstg -55to150 ℃ Junction-to-AmbientThermalResistance(PCBmounted) 3 ROUA 62.5 ℃/W Note: 1.Fusedcurrentthatbasedonwirenumbersanddiameter 2.RepetitiveRating:Pulsewidthlimitedbythemaximumjunctiontemperature 3.1-in 2 2ozCuPCBboard 1of5 Rev1.1Dec2015 Drain1 Gate1 Source1 Drain2 Gate2 Source2 Internal Schematic Diagram

  1. ELECTRICALCHARACTERISTICS Parameter Symbol TestCondition Min Typ Max Unit Static Drain-SourceBreakdownVoltage BVDSS VGS =0V,I D =250uA 20 V Drain-SourceOn-StateResistance RDS(ON) VGS =1.8V,I D =2.0A 53.0 75.0 mΩ Drain-SourceOn-StateResistance RDS(ON) VGS =2.5V,I D =3.5A 30.0 38.0 Drain-SourceOn-StateResistance RDS(ON) VGS =4.0V,I D =4.5A 23.0 30.0 Drain-SourceOn-StateResistance RDS(ON) VGS =4.5V,I D =4.5A 22.0 28.0 Drain-SourceOn-StateResistance RDS(ON) VGS =10V,I D =5.0A 20.0 25.0 GateThresholdVoltage VGS(th) VGS =VGS,I D =250uA 0.5 0.75 1 V ZeroGateVoltagedrainCurrent IDSS VGS =20V,V GS =0V 1 uA GateBodyLeakage IGSS VGS = ±12V,VDS =0V ±100 nA Dynamic3 TotalGateCharge QG VDS =10V,I D =6A VGS =4.5V 6.24 8.11 nCGate-SourceCharge QGS 1.64 2.13 Gate-DrainCharge QGB 1.34 1.74 Tum-OnDelayTime Td(on) VDD =10V,I D =6A ID =1A,V GS =4.5V 10.4 20.8 ns Tum-OnRiseTime Tr 4.4 8.8 Tum-Off DelayTime Td(off) 27.36 54.72 Tum-OffFallTime Tf 4.16 8.32 InputCapacitance Ciss VDS =8V,V GS =0V f=1.0MHz 522.3 pFOutputCapacitance Coss 98.48 ReverseTransferCapacitance Crss 74.69 Source-DrainDiode Max.DiodeForwardCurrent Is 1.7 A DiodeForwardVoltage VSD IS =1.7A,V GS =0V 0.74 V Note:Pulsetest:pulsewidth<=300us,dutycycle<=2% 3.Guaranteedbydesign;notsubjecttoproductiontesting 2of5 Rev1.1Dec2015

5.TypicalCharacteristicsCurves(Ta=25 °C,unlessotherwisenote) 3of5 Rev1.1Dec2015

4of5 Rev1.1Dec2015

5of5 Rev1.1Dec2015