8150A KIA
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n AdvancedPlanarProcess n RDS(ON),typ.=150mΩ@VGS=10V n LowGateChargeMinimizeSwitchingLoss n RuggedPolysiliconGateStructure 2.Applications n BLDCMotorDriver n ElectricWelder n HighEfficiencySMPS 3. Pinconfiguration 1of8 Rev1.0JUN2017 Pin Function
1 Gate
2 Drain
3 Source
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Symbol Parameter KNH8150A Unit VDSS Drain-to-SourceVoltage 500 VVGSS Gate-to-SourceVoltage ±30 ID ContinuousDrainCurrent 30 AContinuousDrainCurrent@Tc=100ºC 18 IDM PulsedDrainCurrentatV GS=10V[2,4] 120 EAS SinglePulseAvalancheEnergy 2000 mJ dv/dt PeakDiodeRecoverydv/dt [3] 5.0 V/ns PD PowerDissipation 333 W DeratingFactorabove25ºC 2.63 W/ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to150 5. Thermalcharacteristics Symbol Parameter KNH8150A Unit RθJC ThermalResistance,Junction-to-Case 0.38 ºC/WRθJA ThermalResistance,Junction-to-Ambient 50 Note: 1.TJ=+25°Cto+150°C 2.Siliconlimitedcurrentonly. 3.Packagelimitedcurrent 4.Repetitiverating;pulsewidthbymaximumjunctiontemperature 5.Pulsewidth ≤380μs;dutycycle ≤2% 2of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,ID=250uA 500 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=500V,V GS=0V -- -- 5 uAVDS=400V,VGS=0V, -- -- 100 TJ =125°C IGSS Gate-to-SourceLeakageCurrent VGS=+30V,VDS=0 V -- -- 100 nA VGS=-30V,V DS=0V -- -- -100 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-Source On-Resistance VGS=10V,I D=15A -- 150 200 mΩ VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.5 -- 4.5 V gFS ForwardTransconductance VDS=25V,ID=15A -- 38 -- S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, -- 4150 -- pFCrss ReverseTransferCapacitance VDS=25V, -- 82 -- Coss OutputCapacitance f=1.0MHZ -- 500 -- Qg TotalGateCharge VDD=250V, -- 108 -- nCQgs Gate-to-SourceCharge ID=30A, -- 21 -- Qgd Gate-to-Drain(Miller)Charge VGS=0to10V -- 44 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=250V, -- 34 -- nS trise RiseTime ID=30A, -- 114 -- td(OFF) Turn-OffDelayTime VGS=10V -- 108 -- tfall FallTime RG=10Ω -- 72 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [2] IntegralPN-diodein -- -- 30 A ISM PulsedSourceCurrent[2] MOSFET -- -- 120 VSD DiodeForwardVoltage IS=30A,VGS=0V -- 0.88 1.5 V trr Reverserecoverytime VGS=0V,I F=30A, -- 900 -- ns Qrr Reverserecoverycharge diF/dt=100A/μs -- 2.1 -- uC 3of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0JUN2017
30A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 8150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0JUN2017