80N06 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 80N06
- DESCRIPTION
- Drain Current I D= 80A@ TC=25℃
- Drain Source Voltage- : V DSS= 60V(Min)
- Fast Switching Speed
- APPLICATIONS
- General purpose power amplifier
- ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 80N06
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-Voltage IS=80A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A 0.01 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 250 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 5900 pF Crss Reverse Transfer Capacitance 230 Coss Output Capacitance 900 tr Rise Time VGS=10V; ID=80A; VDD=48V; RG=50Ω 200 ns td(on) Turn-on Delay Time 42 tf Fall Time 230 td(off) Turn-off Delay Time 46 PDF pdfFactory Pro www.fineprint.cn