80EPS08PBF VISHAY
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Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 07-Jul-09 1 Input Rectifier Diode, 80 A 80EPS..PbF High Voltage Series Vishay High Power Products DESCRIPTION/FEATURES The 80EPS..PbF rectifie r High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level. Compliant to RoHS directive 2002/95/EC. PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 800/1200 V TO-247AC Anode 1 3 Base cathode Anode 4, 2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Sinusoidal waveform 80 A VRRM Range 800/1200 V IFSM 1450 A VF 80 A, TJ = 25 °C 1.17 V TJ - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 80EPS08PbF 800 900 80EPS12PbF 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) TC = 100 °C, 180° conduction half sine wave 80 AMaximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 1450 10 ms sine pulse, no voltage reapplied 1500 Maximum I2t for fusing I 2t 10 ms sine pulse, rated VRRM applied 10 500 A2s 10 ms sine pulse, no voltage reapplied 14 000 Maximum I2√t for fusing I 2√t t = 0.1 ms to 10 ms, no voltage reapplied 105 000 A 2√s * Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94347
2 Revision: 07-Jul-09
80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 80 A, TJ = 25 °C 1.17 V Forward slope resistance r t TJ = 150 °C 3.17 m Ω Threshold voltage V F(TO) 0.73 V Maximum reverse leakage current I RM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.35 °C/WMaximum thermal resistance, junction to ambient RthJA 40 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased 0.2 Approximate weight 0.21 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case style TO-247AC (JEDEC) 80EPS08 80EPS12
Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 07-Jul-09 3 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 110 120 130 140 150 Maximum Allowable Case Temperture (°C) Average Forward Current (A) 8070605040302010 900 30° 60° 90° 120° 180° 80EPS.. Series RthJC (DC) = 0.35 K/W Conduction angle Ø 140 150 130 120 110 100 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 140120100806040200 DC 30° 60° 90° 120° 180° 80EPS.. Series RthJC (DC) = 0.35 K/W Ø Conduction period 100 120 Maximum Average Forward Power Loss (W) Average Forward Current (A) 2010 30 40 80 9050 60 700 RMS limit 180° 120° 90° 60° 30° 80EPS.. Series T J = 150 °C Conduction angle Ø 100 120 140 160 Maximum Average Forward Power Loss (W) Average Forward Current (A) 20 40 120 14060 80 1000 DC 180° 120° 90° 60° 30° RMS limit 80EPS.. Series TJ = 150 °C Ø Conduction period 800 600 400 1600 1400 1200 1000 Peak Half Sine Wave Forward Current (A) Number of Equal Amplitudr Halfe Cycle Current Pulse (N) 10 1001 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 80EPS.. Series 800 600 400 1800 1600 1400 1200 1000 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 0.1 10.01 80EPS.. Series Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated V RRM reapplied
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94347
4 Revision: 07-Jul-09
80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 25 °C TJ = 150 °C 80EPS.. Series 0.01 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 80EPS.. Series
Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 07-Jul-09 5 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products ORDERING INFORMATION TABLE - Current rating (80 = 80 A) - Voltage ratings None = Standard production PbF = Lead (Pb)-free - Circuit configuration: E = Single diode - Package: P = TO-247AC - Type of silicon: S = Standard recovery rectifier 08 = 800 V 12 = 1200 V Device code 513 24
80 E P S 12 PbF
LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226
www.vishay.com Vishay Semiconductors Revision: 16-Jun-11 1 Document Number: 95223 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
0.10 A CM M
E N (2) (3) (4) (4) (2) R/2 B 2 x R S D See view B 2 x e b43 x b 2 x b2 LC (5) L1 1 2 3 Q D A A A C Ø K B DM M A (6) Ø P (Datum B) FP1 D1 (4)
0.01 B DM M
(b1, b3, b5) Base metal (b, b2, b4) Section C - C, D - D, E - E (c) Planting Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode
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