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Technical content
Features
T A = 25/c176C unless otherwise specified 7N65P 7N65D 7N65F 7N65T 7N65K 7N65G
ELECTRICAL CHARACTERISTICS
C =25°C, unless otherwise specified) PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS GS V =0V, I D =250μA 650 V Drain-Source Leakage Current I DSS VDS=650V, VGS=0V 1 μA Gate- Source Leakage Current Forward I GSS V 30V, V DS =0V 100 nA Reverse V GS =-30V, V DS =0V -100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D =250μA, Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) DS V =V GS , I D =250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 1.35 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS V DS =25V, V GS =0V, f=1.0 MHz 1210 1400 pF Output Capacitance C OSS pF 140 180 Reverse Transfer Capacitance C RSS 40 50 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 50 70 ns Turn-On Rise Time t R ns 150 180 Turn-Off Delay Time t D(OFF) 380 410 ns Turn-Off Fall Time t F 180 220 ns Total Gate Charge Q G 29 38 nC Gate-Source Charge Q GS nC Gate-Drain Charge Q GD nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD 1.4 V Maximum Continuous Drain-Source Diode Forward Current I S A Maximum Pulsed Drain-Source Diode Forward Current I SM A Reverse Recovery Time t rr VGS=0V, IS=7.0A, dIF/dt =100 A/μs (Note 1) 490 ns Reverse Recovery Charge Q RR μC 3.2 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. V GS= 10V, ID = 3.5A VDD =300V, ID =7A, RG =25Ω (Note 1, 2) VDS=520V, ID=7A, VGS=10V (Note 1, 2) VGS=0V, IS = 7A PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θ JA 62.5 °C/W TO-251/ TO-252 110 Junction to Case θ JC 2.35 °C/W ITO-220 5.5 TO-251/ TO-252 2.9 TO-220/ITO-220 TO-262/TO-263
TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L V DD Driver V GS R G V DS D.U.T. + * dv/dt controlled by R G SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. Period D=V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform V DD BV DSS I AS I D(t) V DS(t) Unclamped Inductive Switching Test Circuit t p Time Unclamped Inductive Switching Waveforms
Drain-Source On-Resistance, R DS(ON) (Ω) Drain Current, I D (A) On-Resistance Variation vs. Drain Current and Gate Voltage 6 8 10 12 0.1 Source-Drain Voltage, V SD (V) Reverse Drain Current, I DR (A) On State Current vs. Allowable Case Temperature 0.6 Note: T J =25°C Notes: 1. . GS =0V 2. 250µs Test V GS =20V V GS =10V
Drain-Source Breakdown Voltage, BV DSS (Normalized) Drain-Source On-Resistance, R DS(ON) (Normalized) Square Wave Pulse Duration, t (sec) Transient Thermal Response Curve Case Temperature, T C 75 100 12550 25 2.5 3.75 5.0 6.25 7.5 Maximum Drain Current vs. Case Temperature 1.25 150 0.1 0.01 Notes: 1. θ JC (t) ) = 1 18 /W Max. 2. Duty Factor, D=t1/t2 3. T JM C DM JC (t) D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Drain-Source Voltage, V DS (V) Safe Operating Area – 650V Notes: 1. T J =25 2. T J =150 3. Single Pulse DC 10ms 1ms 100µs Operation in This Area is Limited by R DS(on) 650
ITO-220 Mechanical Drawing