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= 10 V = 10 V Power MOSFET 1.Gate 3.Source 2.Drain ORDERING INFORMATION 7N60 7N65 1 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 TO-220
7.0 Amps, 600/650 Volts
DESCRIPTION 7N65 is a high vol tage MOSFET and is desi gned to have better c haracteristics, such as fast s w itching time, low gate charge, low o n-state resistance and have a high rugged avalanche characte ristics. This power MOSFET is usually used at high speed switchin g applications in switching power supplies and adaptors. FEATURES * RDS(ON) = 1.0Ω @VGS R DS(ON) = 1.2Ω @VGS * Ultra Low Gate Charg e (Typical 29 nC ) * Low Reve rse Transfer Capacitance ( CRSS = typical 16pF ) * Fast Switchi ng Capability * Avalanche Ene rgy Tested * Improved dv/dt Capability, Hi gh Ruggedness SYMBOL 1 1 TO-262/I PAK2 TO-263/D PAK2 7N60 ITO-220/TO-220F TO-263/D PAK TO-262/I PAK7N60 Pin Assignment Ordering Number Package 1 2 3 TO-220 G D S ITO-220/TO-220F G D S G D S G D S Note: Pin Assignment: G: Gate D: Drain S: Source 7N65 TO-251/IPAK TO-252/DPAK Par t No. Package Packing 7N6* -TU TO- 251 75pcs / Tube 7N6* -TR TO- 252 2.5Kpcs / 13” Reel 7N6* -TU TO- 220 50pcs / Tube 7N6* -TU ITO -220 50pcs / Tube 7N6* -TU TO- 252 75p cs / Tube 7N6* -TU TO-262 50p cs / Tube 7N6* -TU TO-263 50p cs / Tube 7N6* -TR TO-263 800pcs / 13" Reel G D S G D S TO-251/IPAK TO-252/DPAK DigiCamel
A Power MOSFET 7N60 7N65 2 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 142 48 W ABSOLUTE MAXIMUM RA TINGS (TC = 25°С, unless otherwi se specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltag e VGSS ±30 V Avalanche Cu rrent (Note 2) IAR 7.0 A Continuous I D 7.0 A Drain Current Pulsed (Note 2 ) IDM Single Pulsed ( Note 3) E AS 530Avalan che Energy Repetitive (Note 2) EAR Peak Diode Re covery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 142 W Powe r Dissipation PD (TC = 25°С) Junction T emperature TJ +150 °С Ambient Operat ing Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absol ute maximum ratings are those values beyo nd which the device could be permanently damaged. Absolute ma ximum ratings are stress ratings only and functional device operation is not im plied. 2. Repetitiv e Rating : Pulse width limited by TJ 3. L= 64mH, IAS=7.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. I SD≤7.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA 7N60 7N65 600 V TO-220F TO-262/I PAK2 TO-263/D PAK2 29.6 mJ 14.2 mJ W 142 W PARAMETER SYMBOL RATI NG UNIT Junction to Ambient TO-220/ITO-220/TO-220F TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 160 Junction to Case TO-220/TO-262/TO-263 θJC 1.25 °C/W ITO-220/TO-220F 3.5 TO-251/ TO-252 2.5 DigiCamel
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 ELECTRICAL CHARACTERISTIC S (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN T YP MAX UNIT OFF CHARACTERISTICS 7N60 V Drain-Source Breakdown Voltage 7N65 BVDSS V GS = 0V, ID = 250μA 650 V Drain-Source Leakage Curren t IDSS V DS = 600V, VGS = 0V 1 μA Forward V GS = 30V, VDS = 0V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Vol tage Temperature Coefficient △BVDSS/T△ J ID = 250 μA, Referenced to 25°C 0.67 V/° С ON CHARACT ERISTICS Gate Threshold Voltage VGS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID =3.51A 1.2 Ω DYNAMIC CHA RACTERISTICS Input Capacitance CISS 1400 pF Output Capacitance COSS 180 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V,f =1MHz 16 21 pF SWITCHING CHARACTERISTICS Turn-On Delay Ti me tD (ON) 70 ns Turn-On Rise Time tR 170 ns Turn-Off Delay Ti me tD(OFF) 140 ns Turn-Off Fall Time tF VDD =300V, ID =7.0A, RG=25Ω (Note 1, 2) ns Total Gate Charge QG 29 38 nC Gate-Source Charge QGS 7 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=7.0A (Note 1, 2) 14.5 nC DRAIN-SOURCE DIODE CHAR ACTERISTICS Drain-Source Diode Forward Voltage VSD V GS = 0 V, ISD =7.0 A 1.4 V Continuous Drain-Source Cu rrent ISD 7.0 A Pulsed Drain-Source Current ISM 29.6 A Reverse Recovery Time tRR 320 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 7.0A, di/dt = 100 A/μs (Note1) 2.4 μC Notes: 1. Pulse Test: Pulse w idth ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature 600 130 DigiCamel
TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Dev ice Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Cu rrent di/dt IRM Body Diode Reverse Cu rrent Body Diode Recovery dv/dt Body Diode F orward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F ig . 1B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s 7N60 7N65 4 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 DigiCamel
TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Sw itching Test Circuit Fig. 2B S w itching Waveforms Fi g . 3A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Uncla mped Inductive Switching Test Circuit Fig. 4B Uncl amped Inductive Switching Waveforms 7N60 7N65 5 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 DigiCamel
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 TYPICAL CHARACT ERISTICS 100.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 Gate-Source Voltage, VGS (V) Transfer Charac teristics 46 8 1 0 0.1 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V Notes: 1. 250µ s Pulse Test 2. TC=25°C Notes: 1. VDS=50V 2. 250µs P ulse Test Drain-So urce On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) On-Resistanc e Variation vs. Drain Current and Gate Voltage 6 8 10 12 0.1 Source-Dra in Voltage, VSD (V) Reverse Drain Current, IDR (A) On Stat e Current vs. Allowable Case Temperature 0.6 Note: TJ=25°C Notes: 1. VGS=0V 2. 250µs T est VGS=20V VGS=10V 0.2 0.4 0.8 1 .0 1.2 1.4 1.6 DigiCamel
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 7N60 7N65 TYPICAL CHARACT ERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) Square Wave Pulse Duratio n, t1 (sec) Transient Thermal Response Curve Case Temperature, TC (°C) 75 100 12550 25 2.5 3.75 5.0 6.25 7.5 Maximum Drain Current vs. C ase Temperature 1.25 150 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Notes: 1. θJC (t) = 1.18°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 100 10-1 10-2 Drain-Source Voltage, VDS (V) 102101100 103 Safe Operating Area – 600V Notes: 1. TJ=25°C 2. TJ=150°C 3. Single P ulse DC 10ms 1ms 100µs Operation i n This Area is Limited by RDS(on) 101 600 DigiCamel