7N65 CHONGQING

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

  • 页码 - Rev. 14-1 http:// www.perfectway.cn 7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Lowgatecharge  LowCiss  Fastswitching  100%avalanchetested  Improveddv/dtcapability TO-220AB ITO-220AB 7N65 7N65F TO-263 TO-262 7N65B 7N65H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 7N65 UNIT Drain-SourceVoltage VDSS 650 V Gate-SourceVoltage VGSS ±30 ContinuousDrainCurrent ID 7 A PulsedDrainCurrent(Note1) IDM 28 SinglePulseAvalancheEnergy(Note2) EAS 550 mJ AvalancheCurrent(Note1) IAR 7 A RepetitiveAvalancheEnergy(Note1) EAR 54 mJ ReverseDiodedV/dt(Note3) dv/dt 5.0 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in

1.1 N·m

Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 1.0 0.8 0.8 ℃/W MaximumPowerDissipation TC=25℃ PD 125 155 155 W

  • 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 650 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.6 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=650V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=30V,VDS=0V － － 10 uA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-30V,VDS=0V － － -10 uA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=VGS,ID=250uA 2 － 4 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=3.5A － － 1.4 Ω Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － － 1123 pF OutputCapacitance Coss － － 112 pF ReverseTransferCapacitance Crss － － 21.8 pF Switching Characteristics Turn-OnDelayTime td(on) VDD=300V,ID=7A, RG=25Ω (Note4,5) － 18 － ns Turn-OnRiseTime tr － 19 － ns Turn-OffDelayTime td(off) － 72 － ns Turn-OffFallTime tf － 28 － ns TotalGateCharge Qg VDS=480V,ID=7A, VGS=10V,(Note4,5) － 32 － nC Gate-SourceCharge Qgs － 6.5 － nC Gate-DrainCharge Qgd － 11 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 7.0 A PulsedDiodeForwardCurrent ISM － － 28.0 A DiodeForwardVoltage VSD IS=7A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=7A, dIF/dt=100A/us,(Note4) － 648 － ns ReverseRecoveryCharge Qrr － 4.8 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=50V,starling,L=20mH,Rg=25Ω,IAS=7A,TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.