7N65 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc website ：： ：：www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 7N65

  • · ··FEATURES
  • Drain Current I D= 7A@ T C=25 ℃
  • Drain Source Voltage : V DSS = 650V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 1.35 Ω(Max) @VGS = 10 V
  • Avalanche Energy Specified
  • Fast Switching
  • · ··APPLICATIONS
  • High speed switching applications in power supplies
  • PWM motor controls
  • High efficient DC to DC converters and bridge circuits.
  • · ··ABSOLUTE MAXIMUM RATINGS(T a=25 ℃℃ ℃℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 28 A PD Total Dissipation @T C=25 ℃ 142 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
  • · ··THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.88 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

INCHANGE Semiconductor isc Product Specification isc website ：： ：：www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 7N65

  • · ··ELECTRICAL CHARACTERISTICS TC=25 ℃℃ ℃℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS = 0; I D= 0.25mA 650 V VGS (th ) Gate Threshold Voltage VDS = V GS ; I D= 0.25mA 2 4 V RDS( on ) Drain-Source On-Resistance VGS = 10V; I D= 3.5A 1.35 Ω IGSS Gate-Body Leakage Current VGS = ±30V; VDS = 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS = 650V; V GS = 0 1 μA VSD Forward On-Voltage I S= 7A; V GS = 0 1.4 V Gfs Forward Transconductance VDS = 40V ；ID= 3.5A 8 S
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