75NF75 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc&iscsemi is registered trademark. 1 isc N-Channel MOSFET Transistor 7 5 N F 7 5
FEATURES
- Drain Current –ID= 80A@ TC=25℃
- Drain Source Voltage- : V DSS= 75V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.015Ω(Max)
DESCRIPTION
Suitable as primary switch in advanced high-efficiency, high- frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirements .
APPLICATIONS
- Solenoid and relay drivers
- DC motor control
- DC-DC converters DC
- Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse (tp≤10μs) 320 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc&iscsemi is registered trademark. 2 isc N-Channel MOSFET Transistor 7 5 N F 7 5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS= 0; ID= 0.25mA 75 V VGS(th) Gate Threshold Voltage V DS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance V GS= 10V; ID= 37.5A 0.011 Ω IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 75V; VGS= 0 VDS= 75V; VGS= 0; Tj= 125℃ 1.0 10 μA VSD Forward On-Voltage I S= 75A; VGS=0 1.5 V